Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal (Englisch)
- Neue Suche nach: Yang, W. F.
- Neue Suche nach: Yang, W. F.
- Neue Suche nach: Liu, Z. G.
- Neue Suche nach: Xie, Y. N.
- Neue Suche nach: Cai, J. F.
- Neue Suche nach: Liu, S.
- Neue Suche nach: Gong, H.
- Neue Suche nach: Wu, Z. Y.
In:
Applied physics / A
;
107
, 4
; 809-813
;
2012
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal
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Beteiligte:
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Erschienen in:Applied physics / A ; 107, 4 ; 809-813
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Verlag:
- Neue Suche nach: Springer
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Erscheinungsort:Berlin
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Erscheinungsdatum:2012
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 33.60 / 53.09
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 020/3475/3485
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Schlagwörter:
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Klassifikation:
BKL: 51.00 Werkstoffkunde: Allgemeines / 33.60 Kondensierte Materie: Allgemeines / 53.09 Werkstoffe der Elektrotechnik Lokalklassifikation TIB: 020/3475/3485 -
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