Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN (Englisch)
- Neue Suche nach: Li, Y
- Neue Suche nach: Li, Y
- Neue Suche nach: Ng, G. I
- Neue Suche nach: Arulkumaran, S
- Neue Suche nach: Ye, G
- Neue Suche nach: Liu, Z. H
- Neue Suche nach: Ranjan, K
- Neue Suche nach: Ang, K. S
In:
Journal of applied physics
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121
, 4
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
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Beteiligte:
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Erschienen in:Journal of applied physics ; 121, 4
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Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:2017
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.00 / 50.30
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