Current status of silicon carbide based high-temperature gas sensors (Englisch)
- Neue Suche nach: Lloyd, A.
- Neue Suche nach: Tobias, P.
- Neue Suche nach: Baranzahi, A.
- Neue Suche nach: Martensson, P.
- Neue Suche nach: Lundstrom, I.
- Neue Suche nach: Lloyd, A.
- Neue Suche nach: Tobias, P.
- Neue Suche nach: Baranzahi, A.
- Neue Suche nach: Martensson, P.
- Neue Suche nach: Lundstrom, I.
In:
IEEE Transactions on Electron Devices
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46
, 3
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561-566
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1999
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Current status of silicon carbide based high-temperature gas sensors
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Beteiligte:Lloyd, A. ( Autor:in ) / Tobias, P. ( Autor:in ) / Baranzahi, A. ( Autor:in ) / Martensson, P. ( Autor:in ) / Lundstrom, I. ( Autor:in )
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Erschienen in:IEEE Transactions on Electron Devices ; 46, 3 ; 561-566
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Verlag:
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Erscheinungsdatum:1999
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Format / Umfang:6 Seiten, 37 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 46, Ausgabe 3
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- 441
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EditorialJindal, R.P. et al. | 1999
- 442
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ForewordCooper Jr, J.A. et al. | 1999
- 444
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PAPERS - Electrical Properties and Interface Chemistry in Ti-3C-SiC SystemTouati, F. et al. | 1999
- 444
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Electrical properties and interface chemistry in the Ti/3C-SiC systemTouati, F. / Takemasa, K. / Saji, M. et al. | 1999
- 444
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Electrical Properties and Interface Chemistry in Ti/3C-SiC SystemTouati, F. / Kiminori, T. / Saji, M. et al. | 1999
- 449
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Barrier Inhomogeneities and Electrical Characteristics of Ti/4H-SiC Schottky RectifiersDefives, D. / Noblanc, O. / Dua, C. / Brylinski, C. / Barthula, M. / Aubry-Fortuna, V. / Meyer, F. et al. | 1999
- 449
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PAPERS - Barrier Inhomogeneities and Electrical Characteristics of Ti-4H-SiC Schottky RectifiersDefives, D. et al. | 1999
- 456
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PAPERS - High-Voltage Ni- and Pt-SiC Schottky Diodes Utilizing Metal Field Plate TerminationSaxena, V. et al. | 1999
- 456
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High-Voltage Ni- and Pt-SiC Schoutky Diodes Utilizing Metal Field Plate TerminationSaxena, V. / Su, J. N. / Steckl, A. J. et al. | 1999
- 465
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6H-SiC P^+ N Junctions Fabricated by Beryllium ImplantationRamungul, N. / Khemka, V. / Zheng, Y. / Patel, R. / Chow, T. P. et al. | 1999
- 465
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PAPERS - 6H-SiC P+N Junctions Fabricated by Beryllium ImplantationRamungul, N. et al. | 1999
- 471
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Performance Limiting Surface Defects in SiC Epitaxial p-n Junction DiodesKimoto, T. / Miyamoto, N. / Matsunami, H. et al. | 1999
- 471
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PAPERS - Performance Limiting Surface Defects in SiC Epitaxial p-n Junction DiodesKimoto, T. et al. | 1999
- 478
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Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p^+n Junction Diodes - Part I: DC PropertiesNeudeck, P. G. / Huang, W. / Dudley, M. et al. | 1999
- 478
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PAPERS - Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes -- Part I: DC PropertiesNeudeck, P.G. et al. | 1999
- 493
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PAPERS - Current-Controlled Negative Resistance (CCNR) in SiC P-i-N RectifiersRamungul, N. et al. | 1999
- 493
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Current-Controlled Negative Resistance/CCNR) in SiC P-i-N RectifiersRamungul, N. / Chow, T. P. et al. | 1999
- 497
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Charge-sheet model for silicon carbide inversion layersArnold, E. et al. | 1999
- 497
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PAPERS - Charge-Sheet Model for Silicon Carbide Inversion LayersArnold, E. et al. | 1999
- 497
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Charge-Sheet Model for Silicon Carbide InversionArnold, L. E. et al. | 1999
- 504
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Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO~2/SiC MOS System and MOSFET'sYano, H. / Katafuchi, F. / Kimoto, T. / Matsunami, H. et al. | 1999
- 504
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PAPERS - Effects of Wet Oxidation-Anneal on Interface Properties of Thermally Oxidized SiO2-SiC MOS System and MOSFET'sYano, H. et al. | 1999
- 511
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Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO~2/SiC StructuresCampi, J. / Shi, Y. / Luo, Y. / Yan, F. / Zhao, J. H. et al. | 1999
- 511
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PAPERS - Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO2-SiC StructuresCampi, J. et al. | 1999
- 520
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Time-Dependent-Dielectric-Breakdown Measurements of Thermal Oxides on N-Type 6H-SiCMaranowaski, M. M. / Cooper, J. A. et al. | 1999
- 520
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PAPERS - Time-Dependent-Dielectric-Breakdown Measurements of Thermal Oxides on N-Type 6H-SiCMaranowski, M.M. et al. | 1999
- 525
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Insulator Investigation on SiC for Improved ReliabilityLipkin, L. A. / Palmour, J. W. et al. | 1999
- 525
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PAPERS - Insulator Investigation on SiC for Improved ReliabilityLipkin, L.A. et al. | 1999
- 533
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Detailed Investigation of N-Channel Enhancement 6H-SiC MOSFET'sSchoerner, R. / Friedrichs, P. / Peters, D. et al. | 1999
- 533
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PAPERS - Detailed Investigation of N-Channel Enhancement 6H-SiC MOSFET'sSchörner, R. et al. | 1999
- 542
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PAPERS - An 1800 V Triple Implanted Vertical SiC MOSFETPeters, D. et al. | 1999
- 542
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An 1800 V Triple Implanted Vertical SiC MOSFETPeters, D. / Schoener, R. / Friedrichs, P. / Voikl, J. / Mitlehner, H. / Stephani, D. et al. | 1999
- 542
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An 1800 V triple implanted vertical 6H-SiC MOSFETPeters, D. / Schorner, R. / Friedrichs, P. / Volkl, J. / Mitlehner, H. / Stephani, D. et al. | 1999
- 546
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Recent Progress of Submicron CMOS Using 6H-SiC for Smart Power ApplicationsLam, M. P. / Kornegay, K. T. et al. | 1999
- 546
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PAPERS - Recent Progress of Submicron CMOS Using 6H-SiC for Smart Power ApplicationsLam, M.P. et al. | 1999
- 555
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Influence of Microstructural Variation on the Electrical Properties of SiC MicrothermistorsTerashige, T. / Okano, K. et al. | 1999
- 555
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PAPERS - Influence of Microstructural Variation on the Electrical Properties of SiC MicrothermistorsTerashige, T. et al. | 1999
- 561
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Current Status of Silicon Carbide Based High-Temperature Gas SensorsSpetz, A. L. / Tobias, P. / Baranzahi, A. / Maartensson, P. / Lundstroem, I. et al. | 1999
- 561
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PAPERS - Current Status of Silicon Carbide Based High-Temperature Gas SensorsSpetz, A.L. et al. | 1999
- 567
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Demonstration of an SiC Neutron Detector for High-Radiation EnvironmentsSeshadri, S. / Dulloo, A. R. / Ruddy, F. H. / Seidel, J. G. / Rowland, L. B. et al. | 1999
- 567
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PAPERS - Demonstration of an SiC Neutron Detector for High-Radiation EnvironmentsSeshadri, S. et al. | 1999
- 572
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PAPERS - Photoluminescence from Er-Implanted Polycrystalline 3C-SiCUekusa, S. et al. | 1999
- 572
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Photoluminescence from Er-Implanted Polycrystalline 3C-SiCUekusa, S. / Awahara, K. / Kumugai, M. et al. | 1999
- 577
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SiC-Based Phototransistor with a Tunnel MOS EmitterGrekhov, I. V. / Iranov, P. A. / Samsonova, T. P. / Shulekin, A. F. / Vexler, M. I. et al. | 1999
- 577
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PAPERS - SiC-Based Phototransistor with a Tunnel MOS EmitterGrekhov, I.V. et al. | 1999
- 580
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A CAD-Oriented Nonlinear Model of SiC MESFET Based on Pulsed I(V), Pulsed S-Parameters MeasurementsSiriex, D. / Noblanc, O. / Barataud, D. / Chartier, E. / Brylinski, C. / Quere, R. et al. | 1999
- 580
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PAPERS - A CAD-Oriented Nonlinear Model of SiC MESFET Based on Pulsed I(V), Pulsed S-Parameters MeasurementsSiriex, D. et al. | 1999
- 585
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Microwave Characteristics of BARITT Diodes Based on Silicon CarbideAroutiounian, V. M. / Buniatyan, V. V. / Soukiassian, P. et al. | 1999
- 585
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PAPERS - Microwave Characteristics of BARITT Diodes Based on Silicon CarbideAroutiounian, V.M. et al. | 1999
- 589
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Evaluation of High-Voltage 4H-SiC Switching DevicesWang, J. / Williams, B. W. et al. | 1999
- 589
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PAPERS - Evaluation of High-Voltage 4H-SiC Switching DevicesWang, J. et al. | 1999
- 598
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Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devicesLades, M. / Kaindl, W. / Kaminski, N. / Niemann, E. / Wachutka, G. et al. | 1999
- 598
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Dynamies of Incomplete Ionized Dopants and Their Impact on 4H/6H-SiC DevicesLades, M. / Kaindl, W. / Kaminski, N. / Niemann, E. / Wachutka, G. et al. | 1999
- 598
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PAPERS - Dynamics of Incomplete Ionized Dopants and Their Impact on 4H-6H-SiC DevicesLades, M. et al. | 1999
- 605
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Temperature Stable Pd Ohmic Contacts to p-Type 4[I-SiC Formed at Low TemperaturesKassamakova, L. / Kakanakov, R. / Kassamako, I. / Nordell, N. / Stirage, S. / Hjoervarssoen, B. / Svedberg, E. B. / Abom, L. / Madsen, L. D. et al. | 1999
- 605
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Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperaturesKassamakova, L. / Kakanakov, R.D. / Kassamakov, I.V. / Nordell, N. / Savage, S. / Hjorvarsson, B. / Svedberg, E.B. / Aborn, L. / Madsen, L.D. et al. | 1999
- 605
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PAPERS - Temperature Stable Pd Ohmi Contacts to p-Type 4H-SiC Formed at Low TemperaturesKassamakova, L. et al. | 1999
- 612
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PAPERS - A Comparative Study of C plus Al Coimplantation and Al Implantation in 4H- and 6H-SiCTone, K. et al. | 1999
- 612
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A Comparative Study of C plus Al Coimplantation and Al Implantation in 4H- and 6H-SiCTone, K. / Zhao, J. H. et al. | 1999
- 620
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ANNOUNCEMENTS - Call for Papers -- Special Issue on Bipolar Transistor Technology: Past and Future Directions| 1999