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The effect of the implanted layer thickness in Y Sm Iu Ca Ge garnet films supporting 2 micrometers bubbles has been investigated by using H(+), He and Ne ions. Single and multiple ion implantations at energies up to 200 keV have been employed in order to achieve thicknesses varying from 0.2 to 0.7 micrometers The damage profiles have been measured by chemical acid etching. Homogeneously implanted regions can be created by using either H(+) or He and Ne ions. Propagation margins have been measured on circuits defined by patterns protected from ion implantation. Good results are obtained for thicknesses larger than 0.4 micrometers; no bubble motion is possible under 0.3 micrometers The minimum thickness for bubble propagation is in the range of 0.3 micrometers for 2 micrometers bubbles, optimum margins are obtained for 0.6 micrometers.