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The influence of surface states on the IGFET characteristics in weak inversion has been widely examined. It was also demonstrated that surface state charge was nonuniform along the channel, because surface states are filled to the electron imref level, which has a gradient when current is flowing. As a consequence of this nonuniformity, an additional lateral electric field results. However, in calculating IGFET characteristics this electric field is generally not taken into account. Therefore in the following a model to examine the influence of the nonuniform surface state charge is presented.