Zu diesem lizenzpflichtigen Artikel gibt es eine Open Access Version, die kostenlos und ohne Lizenzbeschränkung gelesen werden kann. Die Open Access Version kann inhaltlich von der lizenzpflichtigen Version abweichen.
Preisinformation
Bitte wählen Sie ihr Lieferland und ihre Kundengruppe
MoSi2 films used as gate electrodes and interconnects were deposited on oxidized Si substrates via reactions between MoCl5 and SiH4. At high temperatures, HCl generated by reactions involving MoCl5, H2, and SiH4 reacts with Si to form volatile SiH3Cl, SiH2Cl, SiHCl3, and SiCl4; thus Si is etched away and is not available to form MoSi2, resulting indeposited film consisting of only metallic Mo. At low temperatures, the deposited film consists of MoSi2 which is thermodynamically stable. The deposited films show characteristic resistivity, crystal structure, and so forth) similar to those of MoSi2 films deposited by sputtering. Chlorine in the deposited films has a gettering effect for mobile ions such as Na(+).