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In recent years advances in crystal growth techniques such as MBE and MOCVD have led to the production of high quality heterojunctions, superlattice structures and graded band gap materials which are now being used in a wide range of device applications. The high state of perfection of the interfaces and the development of modulation doping makes possible carriers with very high mobilities (greater or equal 106cm2/Vs) giving rise to extremely fast devices. The dynamics of hot carriers is obviously important in determining the characteristic performance of such devices and is therefore of considerable interest. In this paper we show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density we can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.