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Deep level impurities in a semiconductor junction can be characterized by the frequency, temperature and bias dependence of the junction admittance. It will be shown briefly, that the build-up of the junction admittance from the bulk semiconductor to the junction interface can be given in terms of a first order differential equation. For a general case, the admittance of a junction device can then be obtained via a numerical integration of the differential equation. However, under certain simplifying assumptions one can obtain a simple analytic solution which can be modeled by an equivalent circuit consisting of lumped constant elements. The experimentally determined admittance of a Hf-In doped p-type Si is compared with the theory.