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The strain introduced at the junction of two lattice mismatched semiconductors reshapes the valence band reducing the density of states, intervalence band absorption, Auger recombination and temperature sensitivity. In the present study, a strained ternary system CdxZn1-xTe on ZnTe substrate has been investigated. The effect of x on critical thickness, effective mass, band gap, optical gain and current density has been calculated. This system was chosen as it is useful in blue emission, emission at high temperature etc. and also it can be grown on silicon substrate directly. The optical gain increases with x whereas current density decreases. The laser cavity length and number of quantum wells have been optimized for different temperatures and for Cd compositions of 0.1 and 0.2 and well widths of 50 A and 60 A. Further, intersubband transitions in symmetric-(ZnTe-CdxZn1-xTe-ZnTe) square quantum well have been studied. The effect of barrier height and well width on absorption coefficient and detectivity, which have a large bearing on the performance of a detector, have been studied. The absorption coefficient ( alpha ) and detectivity (Dlambda ) are calculated for different frequencies (w) for the given x and well width. The maximum value of alpha and Dlambda are picked up from the alpha versus w, and Dlambda versus w curves, and are plotted as the functions of Cd composition (x) and well width. Both alpha and Dlambda increases with x and decreases with well width.