Analysis of Be doping of InGaP lattice matched to GaAs (Englisch)
- Neue Suche nach: Bettini, J.
- Neue Suche nach: Carvalho, M.M.G. de
- Neue Suche nach: Cotta, M.A.
- Neue Suche nach: Pudenzi, M.A.A.
- Neue Suche nach: Frateschi, N.C.
- Neue Suche nach: Silva Filho, A.
- Neue Suche nach: Cardoso, L.P.
- Neue Suche nach: Landers, R.
- Neue Suche nach: Bettini, J.
- Neue Suche nach: Carvalho, M.M.G. de
- Neue Suche nach: Cotta, M.A.
- Neue Suche nach: Pudenzi, M.A.A.
- Neue Suche nach: Frateschi, N.C.
- Neue Suche nach: Silva Filho, A.
- Neue Suche nach: Cardoso, L.P.
- Neue Suche nach: Landers, R.
In:
Journal of Crystal Growth
;
208
, 1-4
;
65-72
;
2000
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Analysis of Be doping of InGaP lattice matched to GaAs
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Beteiligte:Bettini, J. ( Autor:in ) / Carvalho, M.M.G. de ( Autor:in ) / Cotta, M.A. ( Autor:in ) / Pudenzi, M.A.A. ( Autor:in ) / Frateschi, N.C. ( Autor:in ) / Silva Filho, A. ( Autor:in ) / Cardoso, L.P. ( Autor:in ) / Landers, R. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 208, 1-4 ; 65-72
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Verlag:
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Erscheinungsdatum:2000
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Format / Umfang:8 Seiten, 26 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Atomkraftmikroskopie , Beryllium , Ladungsträgerdichte , Chemiestrahlepitaxialwachstum , Galliumverbindung , Hall-Beweglichkeit , Drei-Fünf-Verbindung , Indiumverbindung , Photolumineszenz , Fremdatomzusatz , Halbleiterepitaxialschicht , Halbleiterwachstum , Oberflächentopographie , Epitaxialschicht , Chemiestrahlepitaxie , Oberflächenstruktur , Temperatureinfluss , Galliumarsenid , Struktureigenschaft
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Datenquelle:
Inhaltsverzeichnis – Band 208, Ausgabe 1-4
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Index| 2000