Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy (Englisch)
- Neue Suche nach: Lourenco, M.A.
- Neue Suche nach: Gardiner, D.J.
- Neue Suche nach: Bowden, M.
- Neue Suche nach: Hedley, J.
- Neue Suche nach: Wood, D.
- Neue Suche nach: Lourenco, M.A.
- Neue Suche nach: Gardiner, D.J.
- Neue Suche nach: Bowden, M.
- Neue Suche nach: Hedley, J.
- Neue Suche nach: Wood, D.
In:
Journal of Materials Science Letters
;
19
, 9
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767-769
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy
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Weitere Titelangaben:Spannungsanalyse von B-dotierten Siliciumbrücken- und Siliciumkonsolenstrukturen mittels der Ramanspektroskopie
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Beteiligte:Lourenco, M.A. ( Autor:in ) / Gardiner, D.J. ( Autor:in ) / Bowden, M. ( Autor:in ) / Hedley, J. ( Autor:in ) / Wood, D. ( Autor:in )
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Erschienen in:Journal of Materials Science Letters ; 19, 9 ; 767-769
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Verlag:
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Erscheinungsdatum:2000
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Format / Umfang:3 Seiten, 1 Bild, 2 Tabellen, 6 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 19, Ausgabe 9
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