Enhanced third-order nonlinearity in semiconductors giving rise to 1 THz radiation (Englisch)
- Neue Suche nach: Brazis, R.
- Neue Suche nach: Raguotis, R.
- Neue Suche nach: Moreau, P.
- Neue Suche nach: Siegrist, M.R.
- Neue Suche nach: Brazis, R.
- Neue Suche nach: Raguotis, R.
- Neue Suche nach: Moreau, P.
- Neue Suche nach: Siegrist, M.R.
In:
International Journal of Infrared and Millimeter Waves
;
21
, 4
;
593-602
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Enhanced third-order nonlinearity in semiconductors giving rise to 1 THz radiation
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Beteiligte:Brazis, R. ( Autor:in ) / Raguotis, R. ( Autor:in ) / Moreau, P. ( Autor:in ) / Siegrist, M.R. ( Autor:in )
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Erschienen in:International Journal of Infrared and Millimeter Waves ; 21, 4 ; 593-602
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Verlag:
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Erscheinungsdatum:2000
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Format / Umfang:10 Seiten, 14 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Elektron-Phonon-Wechselwirkung , Elementhalbleiter , Galliumarsenid , Galliumverbindung , Drei-Fünf-Verbindung , Indiumverbindung , Monte-Carlo-Methode , optische Oberwellenerzeugung , Halbleiterwerkstoff , Silicium , unelastische Streuung , Elektron , elastische Streuung , Bezugswert , Indiumphosphid , Indiumnitrid , Galliumnitrid , 80-K-Bereich
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Datenquelle:
Inhaltsverzeichnis – Band 21, Ausgabe 4
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