Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN (Englisch)
- Neue Suche nach: Goano, M.
- Neue Suche nach: Bellotti, E.
- Neue Suche nach: Ghillino, E.
- Neue Suche nach: Ghione, G.
- Neue Suche nach: Brennan, K.F.
- Neue Suche nach: Goano, M.
- Neue Suche nach: Bellotti, E.
- Neue Suche nach: Ghillino, E.
- Neue Suche nach: Ghione, G.
- Neue Suche nach: Brennan, K.F.
In:
Journal of Applied Physics
;
88
, 11
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6467-6475
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
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Beteiligte:Goano, M. ( Autor:in ) / Bellotti, E. ( Autor:in ) / Ghillino, E. ( Autor:in ) / Ghione, G. ( Autor:in ) / Brennan, K.F. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 88, 11 ; 6467-6475
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Verlag:
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Erscheinungsdatum:2000
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Format / Umfang:9 Seiten, 109 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 88, Ausgabe 11
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- 6808
-
On contrast parameters and topographic artifacts in near-field infrared microscopyPalanker, D. V. / Simanovskii, D. M. / Huie, P. / Smith, T. I. et al. | 2000
- 6815
-
Self-normalized photothermal techniques for thermal diffusivity measurementsBalderas-Lo´pez, J. A. / Mandelis, A. et al. | 2000
- 6821
-
Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafersDeymier, P. A. / Vasseur, J. O. / Khelif, A. / Djafari-Rouhani, B. / Dobrzynski, L. / Raghavan, S. et al. | 2000
- 6836
-
Simulations of C28 chemisorption on diamond (001)-(2×1) surface: The comparison between cluster–cluster interaction and cluster–surface interactionZhu, W. J. / Pan, Z. Y. / Ho, Y. K. / Wang, Y. X. et al. | 2000
- 6836
-
Simulations of C28 chemisorption on diamond (001)-(2x1) surface: The comparison between cluster-cluster interaction and cluster-surface interactionZhu, W.J. et al. | 2000
- 6842
-
Electron field emission from Ti-containing tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arcDing, Xing-zhao / Li, Y. J. / Sun, Z. / Tay, B. K. / Lau, S. P. / Chen, G. Y. / Cheung, W. Y. / Wong, S. P. et al. | 2000
- 6848
-
Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor depositionImaizumi, Mitsuru / Yamaguchi, Koji / Okitsu, Kazuhiko / Yamaguchi, Masafumi / Hara, Tamio / Ito, Tadashi / Konomi, Ichiro / Jones, Kim M. / Al-Jassim, Mowafak M. et al. | 2000
- 6856
-
Synthesis of nanocrystalline nickel oxide by controlled oxidation of nickel nanoparticles and their humidity sensing propertiesDas, D. / Pal, M. / Di Bartolomeo, E. / Traversa, E. / Chakravorty, D. et al. | 2000
- 6861
-
Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part I. Optical emission spectroscopyYamagata, Y. / Sharma, A. / Narayan, J. / Mayo, R. M. / Newman, J. W. / Ebihara, K. et al. | 2000
- 6868
-
Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part II. Electrostatic probe measurementsMayo, R. M. / Newman, J. W. / Yamagata, Y. / Sharma, A. / Narayan, J. et al. | 2000
- 6875
-
Bimodal spatial distribution of pores in anodically oxidized aluminum thin filmsBehnke, J. F. / Sands, T. et al. | 2000
- 6881
-
Effect of annealing a silicon wafer in argon with a very low oxygen partial pressureSuzuki, Toshiharu et al. | 2000
- 6887
-
Coarsening kinetics of Ni3Sn4 scallops during interfacial reaction between liquid eutectic solders and Cu/Ni/Pd metallizationGhosh, G. et al. | 2000
- 6897
-
Interactions of atomic hydrogen with Cu(111), Pt(111), and Pd(111)Nobuhara, K. / Nakanishi, H. / Kasai, H. / Okiji, A. et al. | 2000
- 6902
-
Generalized rheology of active materialsSoukhojak, Andrey N. / Chiang, Yet-Ming et al. | 2000
- 6910
-
The superconducting quantum interference device microstrip amplifier: Computer modelsMu¨ck, Michael / Clarke, John et al. | 2000
- 6919
-
Localized surface plasmons on nanometric gold particles observed with an apertureless scanning near-field optical microscopeAdam, P.-M. / Benrezzak, S. / Bijeon, J. L. / Royer, P. et al. | 2000
- 6922
-
Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layerChang, K. L. / Epple, J. H. / Pickrell, G. W. / Lin, H. C. / Cheng, K. Y. / Hsieh, K. C. et al. | 2000
- 6925
-
Ion-nitriding induced plastic deformation in austenitic stainless steelGrigull, S. / Parascandola, S. et al. | 2000
- 6928
-
Distribution of Nb and Co in an α-Fe/Nd2Fe14B-type nanocompositeChen, M. W. / Sakai, A. / Wang, X. M. / Inoue, A. / Sakurai, T. et al. | 2000
- 6928
-
Distribution of Nb and Co in an alpha -Fe/Nd2Fe14B-type nanocompositeChen, M.W. / Sakai, A. / Wang, X.M. / Inoue, A. / Sakurai, T. et al. | 2000
- 6928
-
Distribution of Nb and Co in an a-Fe-Nd2Fe14B-type nanocompositeChen, M.W. et al. | 2000
- 6931
-
In situ conductivity study of the phase transition in Sb-doped C60Li, Xiang / Tang, Y. J. / Zhao, H. W. / Zhan, W. S. / Wang, Haiqian / Hou, J. G. et al. | 2000
- 6934
-
Trans-projected-range gettering of copper in high-energy ion-implanted siliconGueorguiev, Y. M. / Ko¨gler, R. / Peeva, A. / Mu¨cklich, A. / Panknin, D. / Yankov, R. A. / Skorupa, W. et al. | 2000
- 6937
-
Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser depositionMillon, E. / Albert, O. / Loulergue, J. C. / Etchepare, J. / Hulin, D. / Seiler, W. / Perrie`re, J. et al. | 2000
- 6940
-
Study of the electrostatic force between a conducting tip in proximity with a metallic surface: Theory and experimentPatil, Shivprasad / Kulkarni, Arun V. / Dharmadhikari, C. V. et al. | 2000
- 6943
-
Formation of a defect-free denuded zone in GaP substrate by thermal annealingOkada, Hiroshi / Ohmoto, Sei-ichirou / Kawanaka, Takao et al. | 2000
- 6945
-
Effective-mass enhancement and nonparabolicity in thin GaAs quantum wellsSta¨dele, M. / Hess, K. et al. | 2000
- 6948
-
Tunnel switch diode based on AlSb/GaSb heterojunctionsCheng, X.-C. / Cartoixa`, X. / Barton, M. A. / Hill, C. J. / McGill, T. C. et al. | 2000
- 6951
-
Disorder effects in reduced dimension: Indium–phosphide-based resonant tunneling diodesWeaver, B. D. / Jackson, E. M. / Summers, G. P. / Seabaugh, A. C. et al. | 2000
- 6954
-
Measurement of silicon surface recombination velocity using ultrafast pump–probe reflectivity in the near infraredSabbah, A. J. / Riffe, D. M. et al. | 2000
- 6957
-
Erratum: “Magnetization of small arrays of interacting single-domain particles” [J. Appl. Phys. 85, 6175 (1999)]Grundler, D. / Meier, G. / Broocks, K.-B. / Heyn, Ch. / Heitmann, D. et al. | 2000