Microstructural contributions to hole transport in p-type GaN:Mg (Englisch)
- Neue Suche nach: Rice, A.K.
- Neue Suche nach: Malloy, K.J.
- Neue Suche nach: Rice, A.K.
- Neue Suche nach: Malloy, K.J.
In:
Journal of Applied Physics
;
89
, 5
;
2816-2825
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Microstructural contributions to hole transport in p-type GaN:Mg
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Beteiligte:Rice, A.K. ( Autor:in ) / Malloy, K.J. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 89, 5 ; 2816-2825
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Verlag:
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Erscheinungsdatum:2001
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Format / Umfang:10 Seiten, 45 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Boltzmann-Gleichung , Kristallmikrostruktur , Galliumverbindung , Hall-Beweglichkeit , Löcherbeweglichkeit , Drei-Fünf-Verbindung , Magnesium , metallorganische Gasphasenabscheidung , Halbleiterdünnschicht , Halbleiter mit großer Energielücke , Transporttheorie , Röntgenbeugung , Mikrostruktur , Versetzungsdichte , Korngrenze , MOCVD-Überzug , Saphirsubstrat
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Datenquelle:
Inhaltsverzeichnis – Band 89, Ausgabe 5
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