Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy (Englisch)
- Neue Suche nach: Menon, C.
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Radamson, H.H.
- Neue Suche nach: Menon, C.
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Radamson, H.H.
In:
Journal of Applied Physics
;
90
, 9
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4805-4809
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy
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Beteiligte:
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Erschienen in:Journal of Applied Physics ; 90, 9 ; 4805-4809
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Verlag:
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Erscheinungsdatum:2001
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Format / Umfang:5 Seiten, 14 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 90, Ausgabe 9
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