4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW (Englisch)
- Neue Suche nach: Alexandrov, P.
- Neue Suche nach: Wright, B.
- Neue Suche nach: Pan, M.
- Neue Suche nach: Weiner, M.
- Neue Suche nach: Fursin, L.
- Neue Suche nach: Zhao, J.H.
- Neue Suche nach: Alexandrov, P.
- Neue Suche nach: Wright, B.
- Neue Suche nach: Pan, M.
- Neue Suche nach: Weiner, M.
- Neue Suche nach: Fursin, L.
- Neue Suche nach: Zhao, J.H.
In:
ICSCRM, Silicon Carbide and Related Materials, International Conference, 9
;
1177-1180
;
2002
-
ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
-
Titel:4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW
-
Weitere Titelangaben:Junction Barrier Schottky Dioden aus hydriertem Siliciumcarbid für Halbbrücken-Inverter bis 100 kW
-
Beteiligte:Alexandrov, P. ( Autor:in ) / Wright, B. ( Autor:in ) / Pan, M. ( Autor:in ) / Weiner, M. ( Autor:in ) / Fursin, L. ( Autor:in ) / Zhao, J.H. ( Autor:in )
-
Erschienen in:Materials Science Forum ; 389-393 ; 1177-1180
-
Verlag:
- Neue Suche nach: Trans Tech Publications
-
Erscheinungsort:Zürich-Ütikon
-
Erscheinungsdatum:2002
-
Format / Umfang:4 Seiten, 3 Bilder, 3 Quellen
-
ISBN:
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
Silicon Carbide Technology in New EraMatsunami, H. et al. | 2002
- 9
-
Characterisation and Defects in Silicon CarbideBergman, J. P. / Jakobsson, H. / Storasta, L. / Carlsson, F. H. C. / Magnusson, B. / Sridhara, S. / Pozina, G. / Lendenmann, H. / Janzen, E. et al. | 2002
- 15
-
Opportunities and Technical Strategies for Silicon Carbide Device DevelopmentCooper, J. A. et al. | 2002
- 23
-
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial ProductionMuller, S. G. / Brady, M. F. / Brixius, W. H. / Fechko, G. / Glass, R. C. / Henshall, D. / Hobgood, H. M. / Jenny, J. R. / Leonard, R. / Malta, D. et al. | 2002
- 29
-
Growth and Defect Reduction of Bulk SiC CrystalsOhtani, N. / Fujimoto, T. / Katsuno, M. / Aigo, T. / Yashiro, H. et al. | 2002
- 35
-
Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor TransportWang, S. / Sanchez, E. K. / Kopec, A. / Poplawski, S. / Ware, R. / Holmes, S. / Balkas, C. M. / Timmerman, A. G. et al. | 2002
- 39
-
Lateral Enlargement of Silicon Carbide CrystalsJacobson, H. / Yakimova, R. / Raback, P. / Syvajarvi, M. / Birch, J. / Janzen, E. et al. | 2002
- 43
-
Numerical Simulation of Heat and Mass Transfer in SiC Sublimation GrowthNishizawa, S. / Kato, T. / Kitou, Y. / Oyanagi, N. / Arai, K. et al. | 2002
- 47
-
4H Polytype Grain Formation in PVT-Grown 6H-SiC IngotsFujimoto, T. / Katsuno, M. / Ohtani, N. / Aigo, T. / Yashiro, H. et al. | 2002
- 51
-
The Development of 2in 6H-SiC Wafer with High Thermal-ConductivityMiyanagi, Y. / Nakayama, K. / Shiomi, H. / Nishino, S. et al. | 2002
- 55
-
Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiCKatsuno, M. / Ohtani, N. / Fujimoto, T. / Aigo, T. / Yashiro, H. et al. | 2002
- 59
-
Reduction of Macrodefects in Bulk SiC Single CrystalsBalkas, C. M. / Maltsev, A. A. / Roth, M. D. / Heydemann, V. D. / Sharma, M. / Yushin, N. K. et al. | 2002
- 63
-
Model for Macroscopic Slits in 6H- and 4H-SiC Single CrystalsWollweber, J. / Rost, H.-J. / Schulz, D. / Siche, D. et al. | 2002
- 67
-
Macrodefect Generation in SiC Single Crystals Caused by Polytype ChangesRost, H.-J. / Doerschel, J. / Schulz, D. / Siche, D. / Wollweber, J. et al. | 2002
- 71
-
The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon CarbideSanchez, E. K. / Kopec, A. / Poplawski, S. / Ware, R. / Holmes, S. / Wang, S. / Timmerman, A. G. et al. | 2002
- 75
-
Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely MethodHirose, F. / Kitou, Y. / Oyanagi, N. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 79
-
Observation of Planar Defects in 2-inch SiC WaferTanaka, H. / Nishiguchi, T. / Sasaki, M. / Nishino, S. et al. | 2002
- 83
-
Flux-Controlled Sublimation Growth by an Inner Guide-TubeKitou, Y. / Bahng, W. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 87
-
Growth and Evaluation of High Quality SiC Crystal by Sublimation MethodOyanagi, N. / Yamaguchi, H. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 91
-
`In Situ Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray ImagingWellmann, P. J. / Herro, Z. / Straubinger, T. L. / Winnacker, A. et al. | 2002
- 95
-
Influence of the Crystal Thickness on the SiC PVT Growth RateCherednichenko, D. I. / Khlebnikov, Y. I. / Drachev, R. V. / Khlebnikov, I. I. / Sudarshan, T. S. et al. | 2002
- 99
-
Micropipe Formation Model via Surface Step InteractionOhtani, N. / Katsuno, M. / Fujimoto, T. / Aigo, T. / Yashiro, H. et al. | 2002
- 103
-
Self-Healing Phenomenon of Micropipes in Silicon CarbideOkamoto, A. / Seno, Y. / Sugiyama, N. / Hirose, F. / Hara, K. / Tani, T. / Nakamura, D. / Kamiya, N. / Onda, S. et al. | 2002
- 107
-
A Method of Reducing Micropipes in Thin Films by Using Sublimation GrowthOyanagi, N. / Nishizawa, S. / Arai, K. et al. | 2002
- 111
-
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal GrowthKato, T. / Oyanagi, N. / Kitou, Y. / Nishizawa, S. / Arai, K. et al. | 2002
- 115
-
The Effect of Nitrogen on Crystal Growth of SiC on (11&unknown;20) SubstratesNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 119
-
Temperature Dependence of Sublimation Growth of 6H-SiC on (11&unknown;20) SubstratesNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 123
-
The Development of 4H-SiC {03&unknown;38} WafersNakayama, K. / Miyanagi, Y. / Shiomi, H. / Nishino, S. / Kimoto, T. / Matsunami, H. et al. | 2002
- 127
-
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal GrowthBickermann, M. / Weingartner, R. / Hofmann, D. / Straubinger, T. L. / Winnacker, A. et al. | 2002
- 131
-
Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth MethodStraubinger, T. L. / Bickermann, M. / Rasp, M. / Weingartner, R. / Wellmann, P. J. / Winnacker, A. et al. | 2002
- 135
-
Resistivity Mapping of Semi-Insulating 6H-SiC WafersRoth, M. D. / Heydemann, V. D. / Mitchel, W. C. / Yushin, N. K. / Sharma, M. / Wang, S. / Balkas, C. M. et al. | 2002
- 139
-
On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk CrystalsBickermann, M. / Hofmann, D. / Straubinger, T. L. / Weingartner, R. / Winnacker, A. et al. | 2002
- 143
-
Solid-Phase Epitaxial Growth of Bulk SiC Single CrystalsPernot, E. / Anikin, M. / Pons, M. / Chaix-Pluchery, O. / Baillet, F. / Matko, I. / Madar, R. et al. | 2002
- 147
-
Full Si Wafer Conversion into Bulk 3C-SiCLeycuras, A. / Tottereau, O. / Vicente, P. / Falkovsky, L. A. / Girard, P. / Camassel, J. et al. | 2002
- 151
-
QuaSiC Smart-Cut® Substrates for SiC High Power DevicesLetertre, F. / Jalaguier, E. / Di Cioccio, L. / Templier, F. / Bluet, J. M. / Banc, C. / Matko, I. / Chenevier, B. / Bano, E. / Guillot, G. et al. | 2002
- 155
-
CVD SiC Powder for High-Purity SiC Source MaterialEzaki, S. / Saito, M. / Ishino, K. et al. | 2002
- 159
-
Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle PrecursorYamada, Y. / Sagawa, K. et al. | 2002
- 165
-
Recent Achievements and Future Challenges in SiC Homoepitaxial GrowthKimoto, T. / Nakazawa, S. / Fujihira, K. / Hirao, T. / Nakamura, S. / Chen, Y. / Hashimoto, K. / Matsunami, H. et al. | 2002
- 171
-
Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC EpilayersTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 175
-
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVDFujihira, K. / Kimoto, T. / Matsunami, H. et al. | 2002
- 179
-
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD ReactorMasahara, K. / Takahashi, T. / Kushibe, M. / Ohno, T. / Nishio, J. / Kojima, K. / Ishida, Y. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 183
-
Fast Growth and Doping Characteristics of alpha-SiC in Horizontal Cold-Wall Chemical Vapor DepositionNakamura, S. / Kimoto, T. / Matsunami, H. et al. | 2002
- 187
-
Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical RotationSchoner, A. / Konstantinov, A. / Karlsson, S. / Berge, R. et al. | 2002
- 191
-
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with RotationZhang, J. / Forsberg, U. / Isacson, M. / Ellison, A. / Henry, A. / Kordina, O. / Janzen, E. et al. | 2002
- 195
-
Epitaxial Growth of (11&unknown;20) 4H-SiC Using Substrate Grown in the [11&unknown;20] DirectionKojima, K. / Ohno, T. / Senzaki, J. / Fukuda, K. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishino, J. / Masahara, K. / Ishida, Y. et al. | 2002
- 199
-
Hot-Wall CVD Growth of 4H-SiC Using Si~2Cl~6+C~3H~8+H~2 SystemMiyanagi, T. / Nishino, S. et al. | 2002
- 203
-
Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process ParametersForsberg, U. / Danielsson, O. / Henry, A. / Linnarsson, M. K. / Janzen, E. et al. | 2002
- 207
-
Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD SystemWagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G. et al. | 2002
- 211
-
Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the PrecursorWang, R. / Bhat, I. / Chow, P. et al. | 2002
- 215
-
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionNishio, J. / Kushibe, M. / Masahara, K. / Kojima, K. / Ohno, T. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 219
-
Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionDanielsson, O. / Jonsson, S. / Henry, A. / Janzen, E. et al. | 2002
- 223
-
Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor DepositionPons, M. / Meziere, J. / Kuan, S. W. T. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R. et al. | 2002
- 227
-
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD ReactorHasegawa, M. / Miyauchi, A. / Masahara, K. / Ishida, Y. / Takahashi, T. / Ohno, T. / Nishio, J. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 231
-
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial LayersHa, S. / Mieszkowski, P. / Rowland, L. B. / Skowronski, M. et al. | 2002
- 235
-
The Effect of Epitaxial Growth on Warp of SiC WafersNakayama, K. / Miyanagi, Y. / Maruyama, K. / Okamoto, Y. / Shiomi, H. / Nishino, S. et al. | 2002
- 239
-
In Situ Etching of 4H-SiC in H~2 with Addition of HCl for Epitaxial CVD GrowthZhang, J. / Kordina, O. / Ellison, A. / Janzen, E. et al. | 2002
- 243
-
Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVDTakahashi, K. / Uchida, M. / Yokogawa, T. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2002
- 247
-
Delta-Doped Layers of SiC Grown by `Pulse Doping' TechniqueTakahashi, K. / Yokogawa, T. / Uchida, M. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2002
- 251
-
Homoepitaxial `Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free SurfacesNeudeck, P. G. / Powell, J. A. / Trunek, A. / Spry, D. / Beheim, G. M. / Benavage, E. / Abel, P. / Vetter, W. M. / Dudley, M. et al. | 2002
- 255
-
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11&unknown;20) SubstratesChen, Y. / Kimoto, T. / Takeuchi, Y. / Matsunami, H. et al. | 2002
- 259
-
Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature TechniquesKakanakova-Georgieva, A. / Yakimova, R. / Zhang, J. / Storasta, L. / Syvajarvi, M. / Janzen, E. et al. | 2002
- 263
-
Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDSSartel, C. / Souliere, V. / Dazord, J. / Monteil, Y. / El-Harrouni, I. / Bluet, J. M. / Guillot, G. et al. | 2002
- 267
-
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane PrecursorJeong, J. K. / Um, M. Y. / Na, H. J. / Kim, B. S. / Song, I. B. / Kim, H. J. et al. | 2002
- 271
-
TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial GrowthSorokin, L. M. / Hutchison, J. L. / Sloan, J. / Mosina, G. N. / Savkina, N. S. / Shuman, V. B. / Lebedev, A. A. et al. | 2002
- 275
-
3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction CharacteristicsIshida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S. et al. | 2002
- 279
-
Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation EpitaxyFurusho, T. / Miyanagi, T. / Okui, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 283
-
Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC EpilayersYakimova, R. / Jacobson, H. / Syvajarvi, M. / Kakanakova-Georgieva, A. / Iakimov, T. / Virojanadara, C. / Johansson, L. I. / Janzen, E. et al. | 2002
- 287
-
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial LayersFerro, G. / Chaussende, D. / Cauwet, F. / Monteil, Y. et al. | 2002
- 291
-
Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic ContactsSyrkin, A. / Dmitriev, V. / Kovalenkov, O. / Bauman, D. / Crofton, J. et al. | 2002
- 295
-
Traveling Self-Confined-Solvent Method: Novel LPE Growth of 6H-SiCAsaoka, Y. / Hiramoto, M. / Sano, N. / Kaneko, T. et al. | 2002
- 299
-
Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K. et al. | 2002
- 303
-
In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the SourceWang, R. / Bhat, I. / Chow, P. et al. | 2002
- 307
-
SiO~2 as Oxygen Source for the Chemical Vapor Transport of SiCJacquier, C. / Ferro, G. / Cauwet, F. / Monteil, Y. et al. | 2002
- 311
-
Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface HeteroepitaxyNeudeck, P. G. / Powell, J. A. / Trunek, A. J. / Huang, X. R. / Dudley, M. et al. | 2002
- 315
-
3C-SiC Growth on 6H-SiC (0001) SubstratesMatko, I. / Chenevier, B. / Audier, M. / Madar, R. / Diani, M. / Simon, L. / Kubler, L. / Aubel, D. et al. | 2002
- 319
-
Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) SubstratesNagasawa, H. / Kawahara, T. / Yagi, K. et al. | 2002
- 323
-
Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC FilmsTakahashi, T. / Ishida, Y. / Tsuchida, H. / Kamata, I. / Okumura, H. / Yoshida, S. / Arai, K. et al. | 2002
- 327
-
Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown LayersBakin, A. / Behrens, I. / Ivanov, A. / Peiner, E. / Piester, D. / Wehmann, H.-H. / Schlachetzki, A. et al. | 2002
- 331
-
Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si SubstrateOkui, Y. / Jacob, C. / Ohshima, S. / Nishino, S. et al. | 2002
- 335
-
Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by EllipsometryShimizu, H. / Ohba, T. / Hisada, K. et al. | 2002
- 339
-
In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVDSun, G. S. / Luo, M. C. / Wang, L. / Zhu, S. R. / Li, J. M. / Zeng, Y. P. / Lin, L. Y. et al. | 2002
- 343
-
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOIChassagne, T. / Ferro, G. / Wang, H. / Stoemenos, Y. / Peyre, H. / Contreras, S. / Camassel, J. / Monteil, Y. / Ghyselen, B. et al. | 2002
- 347
-
Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric FurnaceHirai, S. / Jobe, F. / Nakao, M. / Izumi, K. et al. | 2002
- 351
-
Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer LayerNakazawa, H. / Suemitsu, M. et al. | 2002
- 355
-
Electrical Characterization of SiC/Si Heterostructures with Modified InterfacesForster, C. / Masri, P. / Pezoldt, J. et al. | 2002
- 359
-
Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized SiliconKrafcsik, O. H. / Vida, G. / Josepovits, K. V. / Deak, P. / Radnoczi, G. Z. / Pecz, B. / Barsony, I. et al. | 2002
- 363
-
Reaction Mechanism of the Carbonization Process by Low-Energy Ion SubplantationTsubouchi, N. / Chayahara, A. / Mokuno, Y. / Kinomura, A. / Horino, Y. et al. | 2002
- 367
-
Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVDYasui, K. / Hashiba, M. / Narita, Y. / Akahane, T. et al. | 2002
- 371
-
Fabrication of alpha-SiC Heteroepitaxial Films by YAG-PLAD MethodMuto, H. / Kusumori, T. et al. | 2002
- 375
-
Low-Temperature Preparation of alpha-SiC Epitaxial Films by Nd: YAG Pulsed-Laser DepositionKusumori, T. / Muto, H. et al. | 2002
- 379
-
Physics of Heteroepitaxy and HeterophasesMasri, P. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 385
-
Growth-Induced Structural Defects in SiC PVT BoulesSkowronski, M. et al. | 2002
- 391
-
Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray TopographyDudley, M. / Vetter, W. M. / Huang, X. R. / Neudeck, P. G. / Powell, J. A. et al. | 2002
- 395
-
Behavior of Micropipes during Growth in 4H-SiCVouroutzis, N. / Yakimova, R. / Syvajarvi, M. / Jacobson, H. / Stoemenos, J. / Janzen, E. et al. | 2002
- 399
-
Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed CrystalsSaddow, S. E. / Elkington, T. / Smith, M. C. D. et al. | 2002
- 403
-
Stress Distribution in 2in SiC Wafer Measured by Photoelastic MethodSasaki, M. / Miyanagi, Y. / Nakayama, K. / Shiomi, H. / Nishino, S. et al. | 2002
- 407
-
Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8Sasaki, M. / Hirai, A. / Miyanagi, T. / Furusho, T. / Nishiguchi, T. / Shiomi, H. / Nishino, S. et al. | 2002
- 411
-
Observation of 2in SiC Wafer by SWBXT at SPring-8Sasaki, M. / Hirai, A. / Miyanagi, T. / Furusho, T. / Nishiguchi, T. / Shiomi, H. / Nishino, S. et al. | 2002
- 415
-
Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiCLiu, J. Q. / Sanchez, E. K. / Skowronski, M. et al. | 2002
- 419
-
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron TopographyPernot, E. / Neyret, E. / Moulin, C. / Pernot-Rejmankova, P. / Templier, F. / Di Cioccio, L. / Billon, T. / Madar, R. et al. | 2002
- 423
-
Structural Defects in Electrically Degraded 4H-SiC PiN DiodesPersson, P. O. A. / Jacobson, H. / Molina-Aldareguia, J. M. / Bergman, J. P. / Tuomi, T. / Clegg, W. J. / Janzen, E. / Hultman, L. et al. | 2002
- 427
-
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN DiodesStahlbush, R. E. / Fedison, J. B. / Arthur, S. D. / Rowland, L. B. / Kretchmer, J. W. / Wang, S. et al. | 2002
- 431
-
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN DiodesGaleckas, A. / Linnros, J. / Breitholtz, B. et al. | 2002
- 435
-
Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiCLiu, J. Q. / Sanchez, E. K. / Skowronski, M. et al. | 2002
- 439
-
Theoretical Calculation of Stacking Fault Energies in Silicon CarbideIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 443
-
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC LayersHa, S. / Vetter, W. M. / Dudley, M. / Skowronski, M. et al. | 2002
- 447
-
Replication of Defects from 4H-SiC Wafer to Epitaxial LayerOhno, T. / Yamaguchi, H. / Kojima, K. / Nishio, J. / Masahara, K. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Yoshida, S. et al. | 2002
- 451
-
4H- to 3C-SiC Polytypic Transformation during OxidationOkojie, R. S. / Xhang, M. / Pirouz, P. / Tumakha, S. / Jessen, G. / Brillson, L. J. et al. | 2002
- 455
-
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC WafersSkromme, B. J. / Palle, K. / Poweleit, C. D. / Bryant, L. R. / Vetter, W. M. / Dudley, M. / Moore, K. / Gehoski, T. et al. | 2002
- 459
-
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC EpilayersIshida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S. et al. | 2002
- 463
-
RHEED: A Tool for Structural Investigations of Thin Polytypic SiC LayersScharmann, F. / Pezoldt, J. et al. | 2002
- 467
-
Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission GunBae, I.-T. / Ishimaru, M. / Hirotsu, Y. et al. | 2002
- 471
-
The Nature and Diffusion of Intrinsic Point Defects in SiCBockstedte, M. / Heid, M. / Mattausch, A. / Pankratov, O. et al. | 2002
- 477
-
Theoretical Investigation of an Intrinsic Defect in SiCGali, A. / Deak, P. / Son, N. T. / Janzen, E. et al. | 2002
- 481
-
Carbon Interstitials in SiC: A Model for the D~I~I CenterMattausch, A. / Bockstedte, M. / Pankratov, O. et al. | 2002
- 485
-
Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening TechniqueRempel, A. A. / Blaurock, K. / Reichle, K. J. / Sprengel, W. / Schaefer, H.-E. et al. | 2002
- 489
-
Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient SpectroscopyKawasuso, A. / Weidner, M. / Redmann, F. / Frank, T. / Krause-Rehberg, R. / Pensl, G. / Sperr, P. / Triftshauser, W. / Itoh, H. et al. | 2002
- 493
-
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation SpectroscopyBarthe, M.-F. / Desgardin, P. / Henry, L. / Corbel, C. / Britton, D. T. / Kogel, G. / Sperr, P. / Triftshauser, W. / Vicente, P. / diCioccio, L. et al. | 2002
- 497
-
EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiCMizuochi, N. / Isoya, J. / Yamasaki, S. / Takizawa, H. / Morishita, N. / Ohshima, T. / Itoh, H. et al. | 2002
- 501
-
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine InteractionWagner, M. / Thinh, N. Q. / Son, N. T. / Baranov, P. G. / Mokhov, E. N. / Hallin, C. / Chen, W. M. / Janzen, E. et al. | 2002
- 505
-
Properties of the UD-1 Deep-Level Center in 4H-SiCMagnusson, B. / Ellison, A. / Janzen, E. et al. | 2002
- 509
-
Electronic Structure of the UD3 Defect in 4H- and 6H-SiCWagner, M. / Magnusson, B. / Chen, W. M. / Janzen, E. et al. | 2002
- 513
-
Depth Distribution of Lattice Damage-Related D~I and D~I~I Defects after Ion Implantation and Annealing of 6H-SiCKoshka, Y. / Melnychuck, G. et al. | 2002
- 517
-
Electrical Properties of Neutron-Irradiated Silicon CarbideKanazawa, S. / Okada, M. / Ishii, J. / Nozaki, T. / Shin, K. / Ishihara, S. / Kimura, I. et al. | 2002
- 521
-
Radiation-Induced Defects in p-Type Silicon CarbideKanazawa, S. / Okada, M. / Nozaki, T. / Shin, K. / Ishihara, S. / Kimura, I. et al. | 2002
- 525
-
Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron ResonanceSon, N. T. / Hallin, C. / Janzen, E. et al. | 2002
- 529
-
Electronic Localization around Stacking Faults in Silicon CarbideIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 533
-
Theoretical Study of Cubic Polytype Inclusions in 4H-SiCIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 537
-
Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiCNilsson, H.-E. / Englund, U. / Hjelm, M. et al. | 2002
- 541
-
Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiCMalhan, R. K. / Kozima, J. / Yamamoto, T. / Fukumoto, A. et al. | 2002
- 545
-
Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data AnalysisLos, A. V. / Mazzola, M. S. et al. | 2002
- 549
-
Electrical Activity of Residual Boron in Silicon CarbideStorasta, L. / Bergman, J. P. / Hallin, C. / Janzen, E. et al. | 2002
- 553
-
Ab Initio Calculations of B Diffusion in SiCRurali, R. / Hernandez, E. / Godignon, P. / Rebollo, J. / Ordejon, P. et al. | 2002
- 557
-
Aluminum and Boron Diffusion into (1&unknown;100) Face SiC SubstratesSoloviev, S. I. / Gao, Y. / Khlebnikov, Y. / Khlebnikov, I. I. / Sudarshan, T. S. et al. | 2002
- 561
-
Impurity-controlled dopant activation - the role of hydrogen in p-type doping of SiCAradi, B. / Gali, A. / Deak, P. / Son, N.T. / Janzen, E. et al. | 2002
- 561
-
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping in SiCAradi, B. / Gali, A. / Deak, P. / Son, N. T. / Janzen, E. et al. | 2002
- 565
-
Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial GrowthLinnarsson, M. K. / Forsberg, U. / Janson, M. S. / Janzen, E. / Svensson, B. G. et al. | 2002
- 569
-
Hydrogen Incorporation into SiC Using Plasma-HydrogenationKoshka, Y. / Draper, W. A. / Lakshman, R. Y. / Scofield, J. / Saddow, S. E. et al. | 2002
- 573
-
Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiCGrillenberger, J. / Achtziger, N. / Pasold, G. / Witthuhn, W. et al. | 2002
- 577
-
Theoretical Studies of Vanadium Impurity in beta-SiCTairov, Y. M. / Reshanov, S. A. / Parfenova, I. I. / Yuryeva, E. I. / Ivanovskii, A. L. et al. | 2002
- 581
-
New and Improved Quantitative Characterization of SiC Using SIMSWang, L. / Sams, D. B. / Wang, A. / Park, B.-S. et al. | 2002
- 585
-
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiCChoyke, W. J. / Devaty, R. P. / Bai, S. / Gali, A. / Deak, P. / Pensl, G. et al. | 2002
- 589
-
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD ReactorBai, S. / Wagner, G. / Shishkin, E. / Choyke, W. J. / Devaty, R. P. / Zhang, M. / Pirouz, P. / Kimoto, T. et al. | 2002
- 593
-
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence SpectroscopyHenry, A. / Ellison, A. / Forsberg, U. / Magnusson, B. / Pozina, G. / Janzen, E. et al. | 2002
- 597
-
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV ExcitationTajima, M. / Tanaka, M. / Hoshino, N. et al. | 2002
- 601
-
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiCMasarotto, L. / Bluet, J. M. / Guillot, G. et al. | 2002
- 605
-
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-TemperatureSchneider, K. / Helbig, R. et al. | 2002
- 609
-
Photoluminescence Investigation of Hydrogen Interaction with Defects in SiCKoshka, Y. / Mazzola, M. S. et al. | 2002
- 613
-
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding EnergyIvanov, I. G. / Zhang, J. / Storasta, L. / Janzen, E. et al. | 2002
- 617
-
Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation SpectrumGrivickas, P. / Grivickas, V. / Galeckas, A. / Linnros, J. et al. | 2002
- 621
-
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared SpectroscopyYaguchi, H. / Narita, K. / Hijikata, Y. / Yoshida, S. / Nakashima, S. / Oyanagi, N. et al. | 2002
- 625
-
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman SpectroscopyHerzog, B. / Rohmfeld, S. / Pusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. et al. | 2002
- 629
-
Sensitive Detection of Defects in alpha and beta SiC by Raman ScatteringNakashima, S. / Nakatake, Y. / Ishida, Y. / Takahashi, T. / Okumura, H. et al. | 2002
- 633
-
Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiCNakashima, S. / Nakatake, Y. / Yano, Y. / Harima, H. / Ohtani, N. / Katsuno, M. et al. | 2002
- 637
-
A Raman Study of Metal-SiC Interface ReactionsKurimoto, E. / Harima, H. / Toda, T. / Sawada, M. / Nakashima, S. / Iwami, M. et al. | 2002
- 641
-
Ultrafast Electron Relaxation Processes in SiCTomita, T. / Saito, S. / Suemoto, T. / Harima, H. / Nakashima, S. et al. | 2002
- 647
-
Optical Characterization of Ion-Implanted 4H-SiCFeng, Z. C. / Yan, F. / Chang, W. Y. / Zhao, J. H. / Lin, J. et al. | 2002
- 651
-
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiCNakamura, S. / Kumagai, H. / Kimoto, T. / Matsunami, H. et al. | 2002
- 655
-
Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance MicroscopyRaineri, V. / Giannazzo, F. / Calcagno, L. / Musumeci, P. / Roccaforte, F. / La Via, F. et al. | 2002
- 659
-
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor DepositionSuda, J. / Nakamura, S. / Miura, M. / Kimoto, T. / Matsunami, H. et al. | 2002
- 663
-
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance MicroscopyOsterman, J. / Anand, S. / Linnarsson, M. K. / Hallen, A. et al. | 2002
- 667
-
Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force MicroscopyYahata, A. / Zhang, L. / Shinohe, T. et al. | 2002
- 671
-
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon CarbideFukuda, Y. / Nishikawa, K. / Shimizu, M. / Iwakuro, H. et al. | 2002
- 675
-
Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si SubstratesYamada, T. / Itoh, K. M. et al. | 2002
- 679
-
Influence of Excited States of Deep Acceptors on Hole Concentrations in SiCMatsuura, H. et al. | 2002
- 683
-
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical CharacterizationLebedev, A. A. / Strel chuk, A. M. / Davydov, D. V. / Savkina, N. S. / Tregubova, A. S. / Kuznetsov, A. N. / Soloviev, V. A. / Poletaev, N. K. et al. | 2002
- 687
-
Scanning Acoustic Microscopy in Porous SiCOstapenko, S. / Smith, M. C. D. / Tarasov, I. / Wolan, J. T. / Mynbaeva, M. / Goings, J. / McKeon, J. C. P. / Saddow, S. E. et al. | 2002
- 691
-
Atomic-Scale Passivation of Silicon Carbide SurfacesSoukiassian, P. et al. | 2002
- 697
-
Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3Virojanadara, C. / Johansson, L. I. et al. | 2002
- 701
-
Oxidation States Present on SiC (0001) after Oxygen ExposureVirojanadara, C. / Johansson, L. I. et al. | 2002
- 705
-
Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3 x √3-R30^oAoyama, T. / Hisada, Y. / Mukainakano, S. / Ichimiya, A. et al. | 2002
- 709
-
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC SurfacesJikimoto, T. / Tsuchida, H. / Kamata, I. / Izumi, K. et al. | 2002
- 713
-
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC SurfacesSieber, N. / Seyller, T. / Ley, L. / Polcik, M. / James, D. / Riley, J. D. / Leckey, R. C. G. et al. | 2002
- 717
-
Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEEDSieber, N. / Seyller, T. / Graupner, R. / Ley, L. / Mikalo, R. P. / Hoffmann, P. / Batchelor, D. R. / Schmeisser, D. et al. | 2002
- 721
-
Photoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiCLabis, J. / Kamezawa, C. / Hirai, M. / Kusaka, M. / Iwami, M. et al. | 2002
- 725
-
In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)Weih, P. / Stauden, T. / Pezoldt, J. et al. | 2002
- 729
-
Atomic-Step Observations on 6H- and 15R-SiC Polished SurfacesVicente, P. / Pernot, E. / Chaussende, D. / Camassel, J. et al. | 2002
- 733
-
Optimization of Interface and Interphase Systems: The Case of SiC and III-V NitridesMasri, P. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 737
-
Towards Quantum Structures in SiCBechstedt, F. / Fissel, A. / Grossner, U. / Kaiser, U. / Weissker, H.-C. / Wesch, W. et al. | 2002
- 743
-
Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell CalculationsWeissker, H.-C. / Furthmuller, J. / Bechstedt, F. et al. | 2002
- 747
-
Growth and Characterization of Three-Dimensional SiC Nanostructures on SiCimalla, V. / Zekentes, K. et al. | 2002
- 751
-
Hole Resonant Tunneling through SiC/Si-dot/SiC HeterostructuresIkoma, Y. / Uchiyama, K. / Watanabe, F. / Motooka, T. et al. | 2002
- 755
-
Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface MicromachiningSong, X. / Rajgopal, S. / Melzak, J. M. / Zorman, C. A. / Mehregany, M. et al. | 2002
- 759
-
Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon CarbidePham, H. T. M. / de Boer, C. R. / Pakula, L. / Sarro, P. M. et al. | 2002
- 763
-
Thermoelectric Properties of 3C-SiC Produced by Silicon CarbonizationMasuda, M. / Mabuchi, H. / Tsuda, H. / Matsui, T. / Morii, K. et al. | 2002
- 767
-
The Brittle-to-Ductile Transition in 4H-SiCZhang, M. / Hobgood, H. M. / Demenet, J. L. / Pirouz, P. et al. | 2002
- 773
-
Annealing of Implanted Layers in (1&unknown;100) and (11&unknown;20) Oriented SiCSatoh, M. et al. | 2002
- 779
-
Range Distributions of Implanted Ions in Silicon CarbideJanson, M. S. / Linnarsson, M. K. / Hallen, A. / Svensson, B. G. et al. | 2002
- 783
-
Phosphorus Ion Implantation into 4H-SiC (0001) and (11&unknown;20)Negoro, Y. / Miyamoto, N. / Kimoto, T. / Matsunami, H. et al. | 2002
- 787
-
Electrical Activation of Implanted Phosphorus Ions in (0001)/(11&unknown;20)-Oriented 4H-SiCSchmid, F. / Laube, M. / Pensl, G. / Wagner, G. / Maier, M. et al. | 2002
- 791
-
Codoping of 4H-SiC with N- and P-Donors by Ion ImplantationLaube, M. / Schmid, F. / Pensl, G. / Wagner, G. et al. | 2002
- 795
-
Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal AnnealingSenzaki, J. / Harada, S. / Kosugi, R. / Suzuki, S. / Fukuda, K. / Arai, K. et al. | 2002
- 799
-
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser AnnealingTanaka, Y. / Tanoue, H. / Arai, K. et al. | 2002
- 803
-
Electrical Characteristics of Al^+ Ion-Implanted 4H-SiCTanaka, H. / Tanimoto, S. / Yamanaka, M. / Hoshi, M. et al. | 2002
- 807
-
Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiCNakamura, H. / Watanabe, H. / Yamazaki, J. / Tanaka, N. / Malhan, R. K. et al. | 2002
- 811
-
Comparison between Chemical and Electrical Profiles in Al^+ or N^+ Implanted and Annealed 6H-SiCNipoti, R. / Carnera, A. / Raineri, V. et al. | 2002
- 815
-
Damage Evolution and Recovery in Al-Implanted 4H-SiCZhang, Y. / Weber, W. J. / Jiang, W. / Hallen, A. / Possnert, G. et al. | 2002
- 819
-
Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN CapJones, K. A. / Shah, P. B. / Derenge, M. A. / Ervin, M. H. / Gerardi, G. J. / Freitas, J. A. / Braga, G. C. B. / Vispute, R. D. / Sharma, R. P. / Holland, O. W. et al. | 2002
- 823
-
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiCOhno, T. / Amemiya, K. et al. | 2002
- 827
-
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature EffectsLazar, M. / Raynaud, C. / Planson, D. / Locatelli, M.-L. / Isoird, K. / Ottaviani, L. / Chante, J. P. / Nipoti, R. / Poggi, A. / Cardinali, G. et al. | 2002
- 831
-
Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with AluminumOhi, A. / Ohshima, T. / Yoshikawa, M. / Lee, K. K. / Iwami, M. / Itoh, H. et al. | 2002
- 835
-
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC DevicesKalinina, E. / Kholujanov, G. / Gol dberg, Y. / Blank, T. / Onushkin, G. / Strel chuk, A. / Violina, G. / Kossov, V. / Yafaev, R. / Hallen, A. et al. | 2002
- 839
-
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)Nakamura, T. / Matsumoto, S. / Horibe, T. / Satoh, M. et al. | 2002
- 843
-
Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11&unknown;20), (1&unknown;100), and (0001) Oriented 6H-SiCEryu, O. / Matsuo, D. / Abe, K. / Nakashima, K. et al. | 2002
- 847
-
Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)Ono, R. / Fujimaki, M. / Senzaki, J. / Tanimoto, S. / Shinohe, T. / Okushi, H. / Arai, K. et al. | 2002
- 851
-
Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient SpectroscopyFujimaki, M. / Ono, R. / Kushibe, M. / Masahara, K. / Kojima, K. / Shinohe, T. / Okushi, H. / Arai, K. et al. | 2002
- 855
-
Enhanced Dopant Diffusion Effects in 4H Silicon CarbidePhelps, G. J. / Wright, N. G. / Chester, E. G. / Johnson, C. M. / O Neill, A. G. / Ortolland, S. / Horsfall, A. B. / Vassilevski, K. / Gwilliam, R. M. et al. | 2002
- 859
-
Infrared Investigation of Implantation Damage in 6H-SiCCamassel, J. / Wang, H. / Pernot, J. / Godignon, P. / Mestres, N. / Pascual, J. et al. | 2002
- 863
-
Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide LayerBahng, W. / Kim, N.-K. / Kim, S. C. / Song, G. H. / Kim, E.-D. et al. | 2002
- 867
-
Masking Process for High-Energy and High-Temperature Ion ImplantationOhyanagi, T. / Onose, H. / Watanabe, A. / Someya, T. / Ohno, T. / Amemiya, K. / Kobayashi, Y. et al. | 2002
- 871
-
Laser Crystallization Mechanism of Amorphous SiC Thin FilmsUrban, S. / Falk, F. / Gorelik, T. / Kaiser, U. et al. | 2002
- 875
-
Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon CarbideWeber, W. J. / Gao, F. / Jiang, W. / Devanathan, R. et al. | 2002
- 879
-
Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC DevicesTanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. et al. | 2002
- 885
-
CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiCNakatsuka, O. / Koide, Y. / Murakami, M. et al. | 2002
- 889
-
NiSi~2 Ohmic Contact to n-Type 4H-SiCNakamura, T. / Satoh, M. et al. | 2002
- 893
-
Electrical Characterization of Nickel Silicide Contacts on Silicon CarbideRoccaforte, F. / La Via, F. / Raineri, V. / Musumeci, P. / Calcagno, L. et al. | 2002
- 897
-
Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiCHan, S. Y. / Kim, N.-K. / Kim, E.-D. / Lee, J.-L. et al. | 2002
- 901
-
Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact FormationAgueev, O. A. / Svetlichnyi, A. M. / Razgonov, R. N. et al. | 2002
- 905
-
Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC ContactsLitvinov, V. L. / Demakov, K. D. / Agueev, O. A. / Svetlichnyi, A. M. / Konakova, R. V. / Lytvyn, P. M. / Milenin, V. V. et al. | 2002
- 909
-
Effects of Surface Treatments of 6H-SiC upon Metal-SiC InterfacesAbe, K. / Sumitomo, M. / Sumi, T. / Eryu, O. / Nakashima, K. et al. | 2002
- 913
-
Titanium-Based Ohmic Contact on p-Type 4H-SiCJung, K. H. / Cho, N. I. / Lee, J. H. / Yang, S. J. / Kim, C. K. / Lee, B.-T. / Rim, K. H. / Kim, N.-K. / Kim, E.-D. et al. | 2002
- 917
-
Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n DiodeKakanakov, R. / Kassamakova, L. / Hristeva, N. / Lepoeva, G. / Kuznetsov, N. / Zekentes, K. et al. | 2002
- 921
-
Schottky Barriers for Pt on 6H and 4H-SiC (0001), (000&unknown;1), (1&unknown;100) and (1&unknown;210) Faces Measured by I-V, C-V and Internal PhotoemissionShigiltchoff, O. / Kimoto, T. / Hobgood, D. / Neudeck, P. G. / Porter, L. M. / Devaty, R. P. / Choyke, W. J. et al. | 2002
- 925
-
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky RectifiersHatayama, T. / Kawahito, K. / Kijima, H. / Uraoka, Y. / Fuyuki, T. et al. | 2002
- 929
-
Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiCKassamakova, L. / Kakanakov, R. / Yakimova, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Wilzen, L. / Janzen, E. et al. | 2002
- 933
-
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic OxidationKato, M. / Ichimura, M. / Arai, E. et al. | 2002
- 937
-
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon CarbideLee, S.-K. / Zetterling, C.-M. / Ostling, M. / Aberg, I. / Magnusson, M. H. / Deppert, K. / Wernersson, L.-E. / Samuelson, L. / Litwin, A. et al. | 2002
- 941
-
Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon CarbideKorolkov, O. / Rang, T. et al. | 2002
- 945
-
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond ContactChen, Y. G. / Hasegawa, M. / Yamanaka, S. / Okushi, H. / Kobayashi, N. et al. | 2002
- 949
-
Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching ProcessKang, S. C. / Shin, M. W. et al. | 2002
- 953
-
Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 PlasmaKim, B. S. / Jeong, J. K. / Um, M. Y. / Na, H. J. / Song, I. B. / Kim, H. J. et al. | 2002
- 957
-
Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H~2O~2 Solution as ElectrolytesSong, J. G. / Shin, M. W. et al. | 2002
- 961
-
Oxidation of Silicon Carbide: Problems and SolutionsAfanas ev, V. V. / Bassler, M. / Pensl, G. / Stesmans, A. et al. | 2002
- 967
-
Passivation of the 4H-SiC/SiO~2 Interface with Nitric OxideWilliams, J. R. / Chung, G. Y. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Weller, R. A. / Pantelides, S. T. / Holland, O. W. / Das, M. K. et al. | 2002
- 973
-
Passivation of the Oxide/4H-SiC InterfaceJamet, P. / Dimitrijev, S. / Tanner, P. et al. | 2002
- 977
-
Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET MobilitiesLu, C.-Y. / Cooper, J. A. / Chung, G. Y. / Williams, J. R. / McDonald, K. / Feldman, L. C. et al. | 2002
- 981
-
High-Current, NO-Annealed Lateral 4H-SiC MOSFETsDas, M. K. / Chung, G. Y. / Williams, J. R. / Saks, N. S. / Lipkin, L. A. / Palmour, J. W. et al. | 2002
- 985
-
N~2O Processing Improves the 4H-SiC:SiO~2 InterfaceLipkin, L. A. / Das, M. K. / Palmour, J. W. et al. | 2002
- 989
-
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature OxidationOkuno, E. / Amano, S. et al. | 2002
- 993
-
Improving 4H-SiC/SiO~2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO~2 and AnnealingWang, X. W. / Bu, H. M. / Laube, B. L. / Caragianis-Broadbridge, C. / Ma, T. P. et al. | 2002
- 997
-
Improvement of SiO~2/alpha-SiC Interface Properties by Nitrogen Radical TreatmentMaeyama, Y. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. / Shirafuji, T. et al. | 2002
- 1001
-
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS StructuresOlafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N. et al. | 2002
- 1005
-
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor StructuresOlafsson, H. O. / Allerstam, F. / Sveinbjornsson, E. O. et al. | 2002
- 1009
-
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor StructuresYoshikawa, M. / Satoh, M. / Ohshima, T. / Itoh, H. et al. | 2002
- 1013
-
The Investigation of 4H-SiC/SiO~2 Interfaces by Optical and Electrical MeasurementsIshida, Y. / Takahashi, T. / Okumura, H. / Jikimoto, T. / Tsuchida, H. / Yoshikawa, M. / Tomioka, Y. / Midorikawa, M. / Hijikata, Y. / Yoshida, S. et al. | 2002
- 1017
-
Characteristics of Mobile Ions in the SiO~2 Films of SiC-MOS StructuresJang, S. J. / Song, H. J. / Oh, K. Y. / Lee, K. H. / Lim, Y. J. / Cho, N. I. et al. | 2002
- 1021
-
Abnormal Hysteresis Property of SiC Oxide C-V CharacteristicsChoi, J.-S. / Lee, W.-S. / Shin, D.-H. / Lee, H.-G. / Kim, Y.-S. / Park, K.-H. et al. | 2002
- 1025
-
ESR Characterization of SiC Bulk Crystals and SiO~2/SiC InterfaceIsoya, J. / Kosugi, R. / Fukuda, K. / Yamasaki, S. et al. | 2002
- 1029
-
Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic EllipsometryTomioka, Y. / Iida, T. / Midorikawa, M. / Tukada, H. / Yoshimoto, K. / Hijikata, Y. / Yaguchi, H. / Yoshikawa, M. / Ishida, Y. / Kosugi, R. et al. | 2002
- 1033
-
X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC InterfacesHijikata, Y. / Yaguchi, H. / Yoshikawa, M. / Yoshida, S. et al. | 2002
- 1037
-
SIMS Analyses of SiO~2/4H-SiC(0001) InterfaceYamashita, K. / Kitabatake, M. / Kusumoto, O. / Takahashi, K. / Uchida, M. / Miyanaga, R. / Itoh, H. / Yoshikawa, M. et al. | 2002
- 1041
-
Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETsChatty, K. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. / Arnold, E. / Alok, D. et al. | 2002
- 1045
-
Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETsSuzuki, S. / Harada, S. / Kosugi, R. / Senzaki, J. / Fukuda, K. et al. | 2002
- 1049
-
Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETsKosugi, R. / Okamoto, M. / Suzuki, S. / Senzaki, J. / Harada, S. / Fukuda, K. / Arai, K. et al. | 2002
- 1053
-
Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETsKojima, K. / Ohno, T. / Suzuki, S. / Senzaki, J. / Harada, S. / Fukuda, K. / Kushibe, M. / Masahara, K. / Ishida, Y. / Takahashi, T. et al. | 2002
- 1057
-
A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11&unknown;20) Face Using H~2 and H~2O Vapor Atmosphere Post-Oxidation AnnealingFukuda, K. / Senzaki, J. / Kushibe, M. / Kojima, K. / Kosugi, R. / Suzuki, S. / Harada, S. / Suzuki, T. / Tanaka, T. / Arai, K. et al. | 2002
- 1061
-
Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation AnnealingSenzaki, J. / Fukuda, K. / Kojima, K. / Harada, S. / Kosugi, R. / Suzuki, S. / Suzuki, T. / Arai, K. et al. | 2002
- 1065
-
4H-SiC MOSFETs on (03&unknown;38) FaceHirao, T. / Yano, H. / Kimoto, T. / Matsunami, H. / Shiomi, H. et al. | 2002
- 1069
-
Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel StructureHarada, S. / Suzuki, S. / Senzaki, J. / Kosugi, R. / Adachi, K. / Fukuda, K. / Arai, K. et al. | 2002
- 1073
-
4H-SiC ACCUFET with a Two-Layer Stacked Gate OxideKaneko, S. / Tanaka, H. / Shimoida, Y. / Kiritani, N. / Tanimoto, S. / Yamanaka, M. / Hoshi, M. et al. | 2002
- 1077
-
4H-SiC Delta-Doped Accumulation-Channel MOS FETYokogawa, T. / Takahashi, K. / Kusumoto, O. / Uchida, M. / Yamashita, K. / Kitabatake, M. et al. | 2002
- 1081
-
Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC InterfaceHatakeyama, T. / Harada, S. / Suzuki, S. / Senzaki, J. / Kosugi, R. / Fukuda, K. / Shinohe, T. / Arai, K. et al. | 2002
- 1085
-
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon GateAdachi, K. / Johnson, C. M. / Arai, K. / Fukuda, K. / Harada, S. / Shinohe, T. et al. | 2002
- 1089
-
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETsChatty, K. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2002
- 1093
-
Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-OxideOhshima, T. / Lee, K. K. / Ohi, A. / Yoshikawa, M. / Itoh, H. et al. | 2002
- 1097
-
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic ConditionsLee, K. K. / Ohshima, T. / Itoh, H. et al. | 2002
- 1101
-
Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic OxidationOkojie, R. S. / Lukco, D. / Keys, L. / Tumakha, S. / Brillson, L. J. et al. | 2002
- 1105
-
Plasma Oxidation of SiC at Low Temperatures (below 300^oC)Satoh, M. / Shimada, H. / Nakamura, T. / Nagamoto, N. / Yanagihara, S. et al. | 2002
- 1109
-
Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiCNipoti, R. / Parisini, A. / Poggi, A. et al. | 2002
- 1113
-
Oxidation of Porous 4H-SiC SubstratesSoloviev, S. / Das, T. / Sudarshan, T. S. et al. | 2002
- 1119
-
Advances in SiC Materials and Technology for Schottky Diode ApplicationsDi Cioccio, L. / Billon, T. et al. | 2002
- 1125
-
Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV RangePeters, D. / Friedrichs, P. / Schorner, R. / Stephani, D. et al. | 2002
- 1129
-
A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current CapabilityDahlquist, F. / Lendenmann, H. / Ostling, M. et al. | 2002
- 1133
-
Impact of Material Defects on SiC Schottky Barrier DiodesMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1137
-
A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated MicropipesKamata, I. / Tsuchida, H. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1141
-
Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current MeasurementsTsuji, T. / Izumi, S. / Ueda, A. / Fujisawa, H. / Ueno, K. / Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1145
-
4H-SiC Schottky Diodes with High On/Off Current RatioVassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. et al. | 2002
- 1149
-
Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky DiodesHorsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. / Gwilliam, R. M. et al. | 2002
- 1153
-
Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse BiasFelsl, H. P. / Wachutka, G. et al. | 2002
- 1157
-
High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge TerminationsMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1161
-
Development of 600 V/8 A SiC Schottky Diodes with Epitaxial Edge TerminationTemplier, F. / Ferret, P. / Di Cioccio, L. / Collard, E. / Lhorte, A. / Billon, T. et al. | 2002
- 1165
-
Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier DiodeOhtsuka, K. / Sugimoto, H. / Kinouchi, S. / Tarui, Y. / Imaizumi, M. / Takami, T. / Ozeki, T. et al. | 2002
- 1169
-
Reverse Characteristics of a 4H-SiC Schottky Barrier DiodeHatakeyama, T. / Shinohe, T. et al. | 2002
- 1173
-
Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe DensitySyrkin, A. / Dmitriev, V. / Yakimova, R. / Henry, A. / Janzen, E. et al. | 2002
- 1177
-
4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kWAlexandrov, P. / Wright, B. / Pan, M. / Weiner, M. / Fursin, L. / Zhao, J. H. et al. | 2002
- 1181
-
Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter SpaceMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1185
-
Application-Oriented Unipolar Switching SiC DevicesFriedrichs, P. / Mitlehner, H. / Schorner, R. / Dohnke, K.-O. / Elpelt, R. / Stephani, D. et al. | 2002
- 1191
-
High-Performance UMOSFETs in 4H-SiCLi, Y. / Cooper, J. A. / Capano, M. A. et al. | 2002
- 1195
-
Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiCRyu, S.-H. / Agarwal, A. / Richmond, J. T. / Das, M. / Lipkin, L. A. / Palmour, J. / Saks, N. / Williams, J. et al. | 2002
- 1199
-
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Omega cm^2Sugawara, Y. / Asano, K. / Takayama, D. / Ryu, S. / Singh, R. / Palmour, J. / Hayashi, T. et al. | 2002
- 1203
-
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETsImaizumi, M. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T. et al. | 2002
- 1207
-
Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETsShimoida, Y. / Kaneko, S. / Tanaka, H. / Hoshi, M. et al. | 2002
- 1211
-
SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)Kusumoto, O. / Yokogawa, T. / Yamashita, K. / Takahashi, K. / Kitabatake, M. / Uchida, M. / Miyanaga, R. et al. | 2002
- 1215
-
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH EtchingWahab, Q. / Kosugi, H. / Yano, H. / Hallin, C. / Kimoto, T. / Matsunami, H. et al. | 2002
- 1219
-
A 600 V SiC Trench JFETGupta, R. N. / Chang, H. R. / Hanna, E. / Bui, C. et al. | 2002
- 1223
-
A Novel High-Voltage Normally-Off 4H-SiC Vertical JFETZhao, J. H. / Li, X. / Tone, K. / Alexandrov, P. / Pan, M. / Weiner, M. et al. | 2002
- 1227
-
2 kV 4H-SiC Junction FETsOnose, H. / Watanabe, A. / Someya, T. / Kobayashi, Y. et al. | 2002
- 1231
-
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect TransistorZhu, L. / Chow, T. P. et al. | 2002
- 1235
-
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect TransistorsKoo, S.-M. / Lee, S.-K. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E. et al. | 2002
- 1239
-
Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power SwitchesMihaila, A. / Udrea, F. / Azar, R. / Brezeanu, G. / Amaratunga, G. et al. | 2002
- 1243
-
Simulation Study of a Novel Current-Limiting Device: A Vertical alpha-SiC JEFT - Controlled Current LimiterTournier, D. / Godignon, P. / Planson, D. / Chante, J. P. / Sarrus, F. et al. | 2002
- 1247
-
Realization of a High-Current and Low R~O~N 600V Current-Limiting DeviceNallet, F. / Godignon, P. / Planson, D. / Raynaud, C. / Chante, J. P. et al. | 2002
- 1251
-
Super-Junction Device Forward Characteristics and Switched Power LimitationsAdachi, K. / Johnson, C. M. / Ohashi, H. / Shinohe, T. / Kinoshita, K. / Arai, K. et al. | 2002
- 1255
-
Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated CircuitsUdrea, F. / Mihaila, A. / Azar, R. et al. | 2002
- 1255
-
Silicon/oxide/silicon carbide (SiOSiC) - a new approach for high voltage, high frequencies integrated circuitsUdrea, F. / Mihaila, A. / Azar, R. et al. | 2002
- 1259
-
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material DefectsLendenmann, H. / Dahlquist, F. / Bergman, J. P. / Bleichner, H. / Hallin, C. et al. | 2002
- 1265
-
High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN RectifiersSingh, R. / Irvine, K. G. / Richmond, J. T. / Palmour, J. W. et al. | 2002
- 1269
-
Study of SiC PiN Diodes Subjected to High Current Density PulsesHillkirk, L. M. / Bakowski, M. et al. | 2002
- 1273
-
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion ImplantationNegoro, Y. / Miyamoto, N. / Kimoto, T. / Matsunami, H. et al. | 2002
- 1277
-
Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic DefectsDomeij, M. / Brunahl, H. / Ostling, M. et al. | 2002
- 1281
-
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC DiodesLiu, J. Q. / Skowronski, M. / Hallin, C. / Soderholm, R. / Lendenmann, H. et al. | 2002
- 1285
-
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial LayersZimmermann, U. / Osterman, J. / Zhang, J. / Henry, A. / Hallen, A. et al. | 2002
- 1289
-
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC CharacterizationIsoird, K. / Lazar, M. / Locatelli, M.-L. / Raynaud, C. / Planson, D. / Chante, J. P. et al. | 2002
- 1293
-
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche RegimeBanc, C. / Bano, E. / Ouisse, T. / Vassilevski, K. / Zekentes, K. et al. | 2002
- 1297
-
Electroluminescence Analysis of Al^+ and B^+ Implanted pn DiodesFujisawa, H. / Tsuji, T. / Izumi, S. / Ueno, K. / Kamata, I. / Tsuchida, T. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1301
-
An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV DetectorsBrezeanu, G. / Badila, M. / Godignon, P. / Millan, J. / Udrea, F. / Mihaila, A. / Amaratunga, G. et al. | 2002
- 1305
-
A Novel Technology for the Formation of a Very Small Bevel Angle for Edge TerminationYan, F. / Qin, C. / Zhao, J. H. / Weiner, M. et al. | 2002
- 1309
-
The Deep Boron Level in High-Voltage PiN DiodesAberg, D. / Hallen, A. / Osterman, J. / Zimmermann, U. / Svensson, B. G. et al. | 2002
- 1313
-
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE MethodKuznetsov, N. / Bauman, D. / Gavrilin, A. / Kalinina, E. et al. | 2002
- 1317
-
Highly-Doped Implanted pn Junction for SiC Zener Diodes FabricationGodignon, P. / Jorda, X. / Nipoti, R. / Cardinali, G. / Mestres, N. et al. | 2002
- 1321
-
Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation StudyBakowski, M. / Gustafsson, U. et al. | 2002
- 1325
-
All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 ALuo, Y. / Fursin, L. / Zhao, J. H. / Alexandrov, P. / Wright, B. / Weiner, M. et al. | 2002
- 1329
-
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiCTang, Y. / Fedison, J. B. / Chow, T. P. et al. | 2002
- 1333
-
On the Temperature Coefficient of 4H-SiC npn Transistor Current GainLi, X. / Luo, Y. / Zhao, J. H. / Alexandrov, P. / Pan, M. / Weiner, M. et al. | 2002
- 1337
-
Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar TransistorsDanielsson, E. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E. et al. | 2002
- 1341
-
Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJTTang, Y. / Chow, T. P. / Agarwal, A. K. / Ryu, S.-H. / Palmour, J. W. et al. | 2002
- 1345
-
A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiCLi, X. / Fursin, L. / Zhao, J. H. / Alexandrov, P. / Pan, M. / Weiner, M. / Burke, T. / Khalil, G. et al. | 2002
- 1349
-
Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO ThyristorsAgarwal, A. K. / Ivanov, P. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. et al. | 2002
- 1353
-
4H-SiC IMPATT Diode Fabrication and TestingVassilevski, K. V. / Zorenko, A. V. / Zekentes, K. / Tsagaraki, K. / Bano, E. / Banc, C. / Lebedev, A. A. et al. | 2002
- 1359
-
Demonstration of IMPATT Diode Oscillators in 4H-SiCYuan, L. / Cooper, J. A. / Webb, K. J. / Melloch, M. R. et al. | 2002
- 1363
-
Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETsSghaier, N. / Bluet, J. M. / Souifi, A. / Guillot, G. / Morvan, E. / Brylinski, C. et al. | 2002
- 1367
-
Development and Demonstration of High-Power X-Band SiC MESFETsChang, H. R. / Hanna, E. / Hacker, J. / Hackett, R. / Bui, C. et al. | 2002
- 1371
-
Hot-Carrier Luminescence in 4H-SiC MESFETsBanc, C. / Bano, E. / Ouisse, T. / Noblanc, O. / Brylinski, C. et al. | 2002
- 1375
-
High-Performance Silicon Carbide MESFET Utilizing Lateral EpitaxyKonstantinov, A. O. / Harris, C. I. / Ericsson, P. et al. | 2002
- 1379
-
Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFETArai, M. / Honda, H. / Ogata, M. / Sawazaki, H. / Ono, S. et al. | 2002
- 1383
-
Fabrication of 4H-SiC Planar MESFETs Having Low Contact ResistanceNa, H. J. / Kim, H. J. / Adachi, K. / Kiritani, N. / Tanimoto, S. / Okushi, H. / Arai, K. et al. | 2002
- 1387
-
Surface Control of 4H-SiC MESFETsHilton, K. P. / Uren, M. J. / Hayes, D. G. / Johnson, H. K. / Wilding, P. J. et al. | 2002
- 1391
-
Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiCMitra, S. / Tucker, J. B. / Rao, M. V. / Papanicolaou, N. / Jones, K. A. et al. | 2002
- 1395
-
Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain SimulationsJonsson, R. / Eriksson, J. / Wahab, Q. / Rudner, S. / Rorsman, N. / Zirath, H. / Svensson, C. et al. | 2002
- 1399
-
4H-SiC MESFET Large-Signal Modeling Using Modified Materka ModelLee, S. / Song, N. J. / Burm, J. / An, C. et al. | 2002
- 1403
-
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFETTournier, D. / Godignon, P. / Montserrat, J. / Planson, D. / Chante, J. P. / Sarrus, F. et al. | 2002
- 1407
-
The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a GateSankin, V. I. / Shkrebiy, P. P. / Kuznetsov, A. N. / Savkina, N. S. et al. | 2002
- 1411
-
Silicon Carbide Microwave LimitersSyrkin, A. / Dmitriev, V. / Lapidus, A. et al. | 2002
- 1415
-
MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment ApplicationsSpetz, A. L. / Uneus, L. / Svenningstorp, H. / Wingbrant, H. / Harris, C. / Salomonsson, P. / Tengstrom, P. / Martensson, P. / Ljung, P. / Mattsson, M. et al. | 2002
- 1415
-
MISiCFET chemical gas sensor for high temperature and corrosive environment applicationsSpetz, A.L. / Uneus, L. / Svenningstorp, H. / Wingbrant, H. / Harris, C.I. / Salomonsson, P. / Tengström, P. / Martensson, P. / Ljung, P. / Mattsson, M. et al. | 2002
- 1419
-
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High TemperaturesUneus, L. / Nakagomi, S. / Linnarsson, M. / Janson, M. S. / Svensson, B. G. / Yakimova, R. / Syvajarvi, M. / Henry, A. / Janzen, E. / Ekedahl, L.-G. et al. | 2002
- 1423
-
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature ConditionsNakagomi, S. / Shinobu, H. / Uneus, L. / Lundstrom, I. / Ekedahl, L.-G. / Yakimova, R. / Syvajarvi, M. / Henry, A. / Janzen, E. / Spetz, A. L. et al. | 2002
- 1427
-
A New Type of SiC Gas Sensor with a pn-Junction StructureNakashima, K. / Okuyama, Y. / Ando, S. / Eryu, O. / Abe, K. / Yokoi, H. / Oshima, T. et al. | 2002
- 1431
-
Demonstration of 4H-SiC Avalanche Photodiode Linear ArrayYan, F. / Qin, C. / Zhao, J. H. / Bush, M. / Olsen, G. H. et al. | 2002
- 1435
-
4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh EnvironmentsRobert, J.-L. / Contreras, S. / Camassel, J. / Pernot, J. / Juillaguet, S. / Di Cioccio, L. / Billon, T. et al. | 2002
- 1439
-
N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle DetectorsIvanov, A. M. / Strokan, N. B. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Bogdanova, E. V. et al. | 2002
- 1445
-
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal QualityEpelbaum, B. M. / Hofmann, D. / Bickermann, M. / Winnacker, A. et al. | 2002
- 1449
-
Crystal Growth of Aluminum Nitride by Sublimation Close Space TechniqueFurusho, T. / Ohshima, S. / Nishino, S. et al. | 2002
- 1453
-
Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray CharacterizationDorozhkin, S. I. / Lebedev, A. O. / Maximov, A. Y. / Tairov, Y. M. et al. | 2002
- 1457
-
Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBEOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1457
-
Heteroepitaxial growth of insulating AIN on 6H-SiC by MBEOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1461
-
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam EpitaxyShen, X. Q. / Ide, T. / Shimizu, M. / Okumura, H. et al. | 2002
- 1465
-
Surface Morphology of GaN Epilayer with Si~xN~1~-~x Buffer Layer Grown by Ammonia-source MBEShimizu, M. / Ohkita, H. / Suzuki, A. / Okumura, H. et al. | 2002
- 1469
-
Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell PressureKakanakova-Georgieva, A. / Forsberg, U. / Magnusson, B. / Yakimova, R. / Janzen, E. et al. | 2002
- 1473
-
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon SubstratesMastro, M. / Kryliouk, O. M. / Dann, T. / Anderson, T. J. / Nikolaev, A. E. / Melnik, Y. V. / Dmitriev, V. A. et al. | 2002
- 1477
-
Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBETeraguchi, N. / Suzuki, A. / Nanishi, Y. et al. | 2002
- 1481
-
Growth of Epitaxial (SiC)~x(AlN)~1~-~x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter DepositionTungasmita, S. / Persson, P. O. A. / Seppanen, T. / Hultman, L. / Birch, J. et al. | 2002
- 1485
-
Silicon Carbide Buffer Layers for Nitride Growth on SiMasri, P. / Herro, Z. / Stauden, T. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 1489
-
Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiCOhsato, H. / Wada, K. / Kato, T. / Sun, C. J. / Razeghi, M. et al. | 2002
- 1493
-
Photoluminescence and Electroluminescence Characterization of In~xGa~1~-~xN/In~yGa~1~-~yN Multiple Quantum Well Light Emitting DiodesBergman, J. P. / Pozina, G. / Monemar, B. / Kamiyama, S. / Iwaya, M. / Amano, H. / Akasaki, I. et al. | 2002
- 1497
-
Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well StructuresLu, C.-R. / Lee, J.-R. / Chen, Y. Y. / Lee, W.-I. / Lee, S.-C. et al. | 2002
- 1501
-
Raman Scattering from Wurtzite GaN Bulk CrystalVerma, P. / Yamada, A. et al. | 2002
- 1505
-
Recent progress of AIGaN/GaN heterojunction FETs for microwave power applicationsMiyamoto, H. et al. | 2002
- 1505
-
Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power ApplicationsMiyamoto, H. et al. | 2002
- 1511
-
High Performance AlGaN/GaN HEMTs with Recessed GateSano, Y. / Mita, J. / Yamada, T. / Makita, T. / Kaifu, K. / Ishikawa, H. / Egawa, T. / Jimbo, T. et al. | 2002
- 1511
-
High performance AIGaN/GaN HEMTs with recessed gateSano, Y. / Mita, J. / Yamada, T. / Makita, T. / Kaifu, K. / Ishikawa, H. / Egawa, T. / Jimbo, T. et al. | 2002
- 1515
-
Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiCLee, J.-W. / Webb, K. J. et al. | 2002
- 1519
-
Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect TransistorIde, T. / Shimizu, M. / Suzuki, A. / Shen, X.-Q. / Okumura, H. / Nemoto, T. et al. | 2002
- 1523
-
Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile ApproachPark, J. / Lee, C. C. / Kim, J.-W. / Lee, J.-S. / Lee, W. S. / Shin, J.-H. / Shin, M. W. et al. | 2002
- 1527
-
AlGaN/GaN Hetero Field-Effect Transistor for a Large Current OperationYoshida, S. / Ishii, H. / Li, J. et al. | 2002
- 1531
-
Gallium Nitride Power Device Design TradeoffsMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2002
- 1535
-
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited OxidesMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2002