7 kV 4H-SiC GTO thyristors (Englisch)
- Neue Suche nach: Van Campen, S.
- Neue Suche nach: Ezis, A.
- Neue Suche nach: Zingaro, J.
- Neue Suche nach: Storaska, G.
- Neue Suche nach: Temple, V.
- Neue Suche nach: Thompson, M.
- Neue Suche nach: Hansen, T.
- Neue Suche nach: Chris Clarke, R.
- Neue Suche nach: Van Campen, S.
- Neue Suche nach: Ezis, A.
- Neue Suche nach: Zingaro, J.
- Neue Suche nach: Storaska, G.
- Neue Suche nach: Temple, V.
- Neue Suche nach: Thompson, M.
- Neue Suche nach: Hansen, T.
- Neue Suche nach: Chris Clarke, R.
In:
MRS Fall Meeting, 2002, Silicon Carbide - Materials, Processing and Devices, 2002
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381-386
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2002
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:7 kV 4H-SiC GTO thyristors
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Beteiligte:Van Campen, S. ( Autor:in ) / Ezis, A. ( Autor:in ) / Zingaro, J. ( Autor:in ) / Storaska, G. ( Autor:in ) / Temple, V. ( Autor:in ) / Thompson, M. ( Autor:in ) / Hansen, T. ( Autor:in ) / Chris Clarke, R. ( Autor:in )
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Erschienen in:Materials Research Society Symposium - Proceedings ; 742 ; 381-386
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Verlag:
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Erscheinungsdatum:2002
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Format / Umfang:6 Seiten, 8 Quellen
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ISBN:
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ISSN:
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Coden:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)Kimoto, T. / Hashimoto, K. / Fujihira, K. / Danno, K. / Nakamura, S. / Negoro, Y. / Matsunami, H. / Materials Research Society et al. | 2003
- 15
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Channel Epitaxy of 3C-SiC on Si Substrates by CVDNishino, S. / Okui, Y. / Jacob, C. / Ohshima, S. / Materials Research Society et al. | 2003
- 23
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Modeling Analysis of Free-Spreading Sublimation Growth of SiC CrystalsBogdanov, M. V. / Demina, S. E. / Karpov, S. Y. / Kulik, A. V. / Ofengeim, D. K. / Ramm, M. S. / Mokhov, E. N. / Roenkov, A. D. / Vodakov, Y. A. / Makarov, Y. A. et al. | 2003
- 29
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Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen DopingMeziere, J. / Blanquet, E. / Pons, M. / Dedulle, J.-M. / Ferret, P. / Di Cioccio, L. / Billon, T. / Materials Research Society et al. | 2003
- 35
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Reconstruction and Epitaxial Adlayers on SiC Surfaces: Structural Significance for Technological ApplicationsStarke, U. / Materials Research Society et al. | 2003
- 47
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3C-SiC Monocrystals Grown on Undulant Si(001) SubstratesNagasawa, H. / Yagi, K. / Kawahara, T. / Hatta, N. / Materials Research Society et al. | 2003
- 59
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Growth of Columnar SiC on Patterned Si Substrates by CVDNishino, S. / Okui, Y. / Tai, Y. / Jacob, C. / Materials Research Society et al. | 2003
- 67
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Ion Dose Dependence on Solid Phase Epitaxy of Amorphous Silicon Carbide Induced by Ion ImplantationBae, I.-T. / Ishimaru, M. / Hirotsu, Y. / Materials Research Society et al. | 2003
- 73
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Radial Distribution Functions of Amorphous Silicon CarbideIshimaru, M. / Bae, I.-T. / Hirotsu, Y. / Materials Research Society et al. | 2003
- 79
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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film DevicesGateru, R. G. / Shannon, J. M. / Silva, S. R. P. / Materials Research Society et al. | 2003
- 85
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Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic StructuresGallis, S. / Futschik, U. / Castracane, J. / Kaloyeros, A. E. / Efstathiadis, H. / Sherwood, W. / Hayes, S. / Fountzoulas, C. G. / Materials Research Society et al. | 2003
- 91
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SiC to SiC Wafer BondingYushin, G. N. / Kvit, A. V. / Collazo, R. / Sitar, Z. / Materials Research Society et al. | 2003
- 97
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Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si HeterostructuresTsang, W. M. / Wong, S. P. / Lindner, J. K. N. / Materials Research Society et al. | 2003
- 103
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Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC WafersSuleimanov, Y. M. / Lulu, S. / Tarasov, I. / Ostapenko, S. / Saddow, S. E. / Torchinska, T. V. / Heydemann, V. D. / Roth, M. D. / Kordina, O. / MacMillan, M. F. et al. | 2003
- 109
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Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on ThemRaghothamachar, B. / Bai, J. / Vetter, W. M. / Gouma, P. / Dudley, M. / Mynbaeva, M. / Smith, M. T. / Saddow, S. E. / Materials Research Society et al. | 2003
- 115
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<0001> Channeling Stopping Power of MeV He^+ Ions in 4H- and 6H-SiCNipoti, R. / Letertre, F. / Materials Research Society et al. | 2003
- 121
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Spectroscopic Properties of Cubic SiC on SiFeng, Z. C. / Talwar, D. N. / Ferguson, I. / Materials Research Society et al. | 2003
- 127
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Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide WafersMier, M. G. / Boeckl, J. J. / Hill, D. A. / Bertrand, S. D. / Ramakrishnan, E. / Roth, M. D. / Balkas, C. / Nelson, M. P. / Materials Research Society et al. | 2003
- 131
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Thermal Stress as the Major Factor of Defect Generation in SiC During PVT GrowthCherednichenko, D. I. / Drachev, R. V. / Khlebnikov, I. I. / Deng, X. / Sudarshan, T. S. / Materials Research Society et al. | 2003
- 137
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Thermal Plasma Physical Vapor Deposition of Nanostructured SiC CoatingsWang, X. / Eguchi, K. / Yamamoto, A. / Yoshida, T. / Materials Research Society et al. | 2003
- 143
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Self-Assembled Ge Quantum Dots on SiC Substrates Grown by UHV-CVDCalmes, C. / Le Thanh, V. / Bouchier, D. / Saddow, S. E. / Yam, V. / Debarre, D. / Laval, R. / Clerc, C. / Materials Research Society et al. | 2003
- 151
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Four Current Examples of Characterization of Silicon CarbideBai, S. / Ke, Y. / Shishkin, Y. / Shigiltchoff, O. / Devaty, R. P. / Choyke, W. J. / Strauch, D. / Stojetz, B. / Dorner, B. / Hobgood, D. et al. | 2003
- 163
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Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiCPensl, G. / Ciobanu, F. / Krieger, M. / Laube, M. / Reshanov, S. / Schmid, F. / Wagner, G. / Nagasawa, H. / Schoner, A. / Materials Research Society et al. | 2003
- 175
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Ion Implantation Induced Deep Defects in n-Type 4H-Silicon CarbideEvwaraye, A. O. / Smith, S. R. / Mitchel, W. C. / Capano, M. A. / Materials Research Society et al. | 2003
- 181
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Effects of Structural Defects on Diode Properties in 4H-SiCSkromme, B. J. / Palle, K. C. / Mikhov, M. K. / Meidia, H. / Mahajan, S. / Huang, X. R. / Vetter, W. M. / Dudley, M. / Moore, K. / Smith, S. et al. | 2003
- 187
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Process Induced Extended Defects in SiC Grown via SublimationYakimova, R. / Syvajarvi, M. / Jacobson, H. / Ciechonski, R. R. / Vouroutzis, N. / Stoemenos, J. / Materials Research Society et al. | 2003
- 199
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Extended Defects in 4H-SiC PiN DiodesTwigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S. / Materials Research Society et al. | 2003
- 205
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Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-ray Multiple-Order ReflectionsHuang, X. R. / Dudley, M. / Neudeck, P. G. / Powell, J. A. / Materials Research Society et al. | 2003
- 213
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Experimental Studies and Thermodynamic Modeling of the Interaction of O~2 With SiCSong, Y. / Smith, F. W. / Materials Research Society et al. | 2003
- 219
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SiO~2/SiC Interface Properties on Various Surface OrientationsYano, H. / Hirao, T. / Kimoto, T. / Matsunami, H. / Materials Research Society et al. | 2003
- 227
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Afterglow Thermal Oxidation of Silicon CarbideHoff, A. M. / Tibrewala, A. / Saddow, S. E. / Materials Research Society et al. | 2003
- 233
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A Semi-Empirical Model for Electron Mobility at the SiC/SiO~2 InterfaceSaks, N. S. / Materials Research Society et al. | 2003
- 241
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Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web GrowthNeudeck, P. G. / Spry, D. J. / Trunek, A. J. / Powell, J. A. / Beheim, G. M. / Materials Research Society et al. | 2003
- 247
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Modeling the Crystal Growth of Cubic Silicon Carbide by Molecular Dynamics SimulationsResta, N. / Kohler, C. / Trebin, H.-R. / Materials Research Society et al. | 2003
- 253
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Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA)Marzik, J. V. / Oyama, T. / MoberlyChan, W. J. / Croft, W. J. / Materials Research Society et al. | 2003
- 259
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Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Nakashima, S. / Fukuda, K. / Arai, K. / Materials Research Society et al. | 2003
- 265
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Transport Mechanisms in Focused Ion Beam Assisted Ohmic Contacts to p-Type 6H-SiCIliadis, A. A. / Materials Research Society et al. | 2003
- 271
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Photo-Chemical Pattern Etching of Silicon-Carbide by Using Excimer Laser and Hydrogen Peroxide SolutionSasaki, D. / Murahara, M. / Materials Research Society et al. | 2003
- 277
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The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiCSmith, S. R. / Evwaraye, A. O. / Mitchel, W. C. / Materials Research Society et al. | 2003
- 283
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The Effect of Channel Recess and Passivation on 4H-SiC MESFETsCha, H.-Y. / Thomas, C. I. / Koley, G. / Eastman, L. F. / Spencer, M. G. / Materials Research Society et al. | 2003
- 291
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Aluminum and Boron Diffusion in 4H-SiCLinnarsson, M. K. / Janson, M. S. / Schoner, A. / Svensson, B. G. / Materials Research Society et al. | 2003
- 303
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Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiCNipoti, R. / Moscatelli, F. / Scorzoni, A. / Poggi, A. / Cardinali, G. C. / Lazar, M. / Raynaud, C. / Planson, D. / Locatelli, M.-L. / Chante, J.-P. et al. | 2003
- 309
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Porous SiC-Prospective ApplicationsMynbaeva, M. / Materials Research Society et al. | 2003
- 321
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Strained SiC:Ge Layers in 4H SiC Formed by Ge ImplantationDashiell, M. W. / Xuan, G. / Zhang, X. / Ansorge, E. / Kolodzey, J. / Materials Research Society et al. | 2003
- 329
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System Design Considerations for Optimizing the Benefit by Unipolar SiC Power DevicesRupp, R. / Zverev, I. / Materials Research Society et al. | 2003
- 341
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SiC BJT's for High Power Switching and RF ApplicationsAgarwal, A. / Ryu, S.-H. / Capell, C. / Richmond, J. / Palmour, J. W. / Phan, B. / Stambaugh, J. / Bartlow, H. / Brewer, K. / Materials Research Society et al. | 2003
- 347
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Electrical Instability Suppression in 4H-SiC Power MESFETsTucker, J. B. / Beaupre, R. A. / Zhang, A. P. / Garrett, J. L. / Rowland, L. B. / Kaminsky, E. B. / Kretchmer, J. W. / Vertiatchikh, A. / Eastman, L. F. / Allen, A. F. et al. | 2003
- 363
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Influence of Interface States on High Temperature SiC Sensors and ElectronicsGhosh, R. N. / Tobias, P. / Golding, B. / Materials Research Society et al. | 2003
- 371
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Towards Ferroelectric Field Effect Transistors in 4H-Silicon CarbideKoo, S.-M. / Khartsev, S. I. / Zetterling, C.-M. / Grishin, A. M. / Ostling, M. / Materials Research Society et al. | 2003
- 381
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7 kV 4H-SiC GTO ThyristorsVan Campen, S. / Ezis, A. / Zingaro, J. / Storaska, G. / Clarke, R. C. / Temple, V. / Thompson, M. / Hansen, T. / Materials Research Society et al. | 2003
- 387
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Fabrication and Measurement of 4H-Silicon Carbide Avalanche PhotodiodesBurr, K. / Sandvik, P. / Arthur, S. / Brown, D. / Matocha, K. / Materials Research Society et al. | 2003
- 393
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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) SubstratesTemplier, F. / Daval, N. / Di Cioccio, L. / Bourgeat, D. / Letertre, F. / Planson, D. / Chante, J.-P. / Billon, T. / Materials Research Society et al. | 2003