Voltage acceleration and t63.2 of 1.6-10 nm gate oxides (Englisch)
- Neue Suche nach: Vollertsen, R.P.
- Neue Suche nach: Wu, E.Y.
- Neue Suche nach: Vollertsen, R.P.
- Neue Suche nach: Wu, E.Y.
In:
Microelectronics Reliability
;
44
, 6
;
909-916
;
2004
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Voltage acceleration and t63.2 of 1.6-10 nm gate oxides
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Beteiligte:Vollertsen, R.P. ( Autor:in ) / Wu, E.Y. ( Autor:in )
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Erschienen in:Microelectronics Reliability ; 44, 6 ; 909-916
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Verlag:
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Erscheinungsdatum:2004
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Format / Umfang:8 Seiten, 18 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 44, Ausgabe 6
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