Mechanisms of diffusion-enhanced thermal stability of Si/Si1-xGex/Si heterostructures grown by chemical vapor deposition (Englisch)
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Menon, C.
- Neue Suche nach: Radamson, H.H.
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Menon, C.
- Neue Suche nach: Radamson, H.H.
In:
Journal of Crystal Growth
;
261
, 1
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22-29
;
2004
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Mechanisms of diffusion-enhanced thermal stability of Si/Si1-xGex/Si heterostructures grown by chemical vapor deposition
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Beteiligte:
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Erschienen in:Journal of Crystal Growth ; 261, 1 ; 22-29
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Verlag:
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Erscheinungsdatum:2004
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Format / Umfang:8 Seiten, 19 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Arsen , Bor , chemisches Aufdampfen , Diffusion , Elementhalbleiter , Germaniumsiliciumlegierung , Phosphor , Sekundärionenmassenspektrum , Halbleiterwachstum , Heteroübergang , Halbleiterwerkstoff , Halbleiterdünnschicht , Silicium , Wärmebeständigkeit , Sekundärionenmassenspektrometrie , Distanzstück
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Datenquelle:
Inhaltsverzeichnis – Band 261, Ausgabe 1
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