Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM (Englisch)
- Neue Suche nach: Polspoel, W.
- Neue Suche nach: Vandervorst, W.
- Neue Suche nach: Petry, J.
- Neue Suche nach: Conard, T.
- Neue Suche nach: Benedetti, A.
- Neue Suche nach: Polspoel, W.
- Neue Suche nach: Vandervorst, W.
- Neue Suche nach: Petry, J.
- Neue Suche nach: Conard, T.
- Neue Suche nach: Benedetti, A.
In:
Microelectronic Engineering
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80
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436-439
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2005
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM
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Beteiligte:Polspoel, W. ( Autor:in ) / Vandervorst, W. ( Autor:in ) / Petry, J. ( Autor:in ) / Conard, T. ( Autor:in ) / Benedetti, A. ( Autor:in )
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Erschienen in:Microelectronic Engineering ; 80 ; 436-439
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Verlag:
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Erscheinungsdatum:2005
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Format / Umfang:4 Seiten, 7 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 80
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-
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- 362
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- 366
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-
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-
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- 374
-
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- 378
-
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- 386
-
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- 390
-
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- 394
-
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- 398
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- 402
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- 408
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- 412
-
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- 420
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- 440
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- 444
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Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxidesFlorian Beug, M. / Ferretti, Rüdiger / Hofmann, Karl R. et al. | 2005
- 448
-
Semiconductor and insulator nanostructures: challenges and opportunitiesCojocaru, C.V. / Ratto, F. / Harnagea, C. / Pignolet, A. / Rosei, F. et al. | 2005
- 457
-
Author Index| 2005
- CO2
-
Editorial board| 2005
- ix
-
Table of Contents| 2005
- v
-
PrefaceGroeseneken, Guido / Kaczer, Ben et al. | 2005
- vi
-
INFOS 2005 Conference committees| 2005
- vii
-
Acknowledgments| 2005