Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy (Englisch)
- Neue Suche nach: Chung, Sung-Yong
- Neue Suche nach: Jin, Niu
- Neue Suche nach: Pavlovicz, Ryan E.
- Neue Suche nach: Yu, Ronghua
- Neue Suche nach: Berger, Paul R.
- Neue Suche nach: Thompson, Phillip E.
- Neue Suche nach: Chung, Sung-Yong
- Neue Suche nach: Jin, Niu
- Neue Suche nach: Pavlovicz, Ryan E.
- Neue Suche nach: Yu, Ronghua
- Neue Suche nach: Berger, Paul R.
- Neue Suche nach: Thompson, Phillip E.
In:
IEEE Transactions on Nanotechnology
;
6
, 2
;
158-163
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy
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Weitere Titelangaben:Analyse der Spannungsabweichungen für Logik- und Speicheranwendungen in durch Molekularstrahlepitaxie hergestellten Si/SiGe-Dioden mit resonantem Interbandtunneln
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Beteiligte:Chung, Sung-Yong ( Autor:in ) / Jin, Niu ( Autor:in ) / Pavlovicz, Ryan E. ( Autor:in ) / Yu, Ronghua ( Autor:in ) / Berger, Paul R. ( Autor:in ) / Thompson, Phillip E. ( Autor:in )
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Erschienen in:IEEE Transactions on Nanotechnology ; 6, 2 ; 158-163
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Verlag:
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Erscheinungsdatum:2007
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Format / Umfang:6 Seiten, 4 Bilder, 20 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 6, Ausgabe 2
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Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam EpitaxySung-Yong Chung, / Niu Jin, / Pavlovicz, R.E. / Ronghua Yu, / Berger, P.R. / Thompson, P.E. et al. | 2007
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