Electrical characterization of high-k based MIS capacitors using flat-band voltage transients (Englisch)
- Neue Suche nach: Garcia, H.
- Neue Suche nach: Duenas, S.
- Neue Suche nach: Castan, H.
- Neue Suche nach: Gomez, A.
- Neue Suche nach: Bailon, L.
- Neue Suche nach: Kukli, K.
- Neue Suche nach: Hatanpaa, T.
- Neue Suche nach: Aarik, J.
- Neue Suche nach: Aidla, A.
- Neue Suche nach: Ritala, M.
- Neue Suche nach: Leskela, M.
- Neue Suche nach: Garcia, H.
- Neue Suche nach: Duenas, S.
- Neue Suche nach: Castan, H.
- Neue Suche nach: Gomez, A.
- Neue Suche nach: Bailon, L.
- Neue Suche nach: Kukli, K.
- Neue Suche nach: Hatanpaa, T.
- Neue Suche nach: Aarik, J.
- Neue Suche nach: Aidla, A.
- Neue Suche nach: Ritala, M.
- Neue Suche nach: Leskela, M.
In:
CDE, Spanish Conference on Electron Devices, 2009
;
223-226
;
2009
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Electrical characterization of high-k based MIS capacitors using flat-band voltage transients
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Beteiligte:Garcia, H. ( Autor:in ) / Duenas, S. ( Autor:in ) / Castan, H. ( Autor:in ) / Gomez, A. ( Autor:in ) / Bailon, L. ( Autor:in ) / Kukli, K. ( Autor:in ) / Hatanpaa, T. ( Autor:in ) / Aarik, J. ( Autor:in ) / Aidla, A. ( Autor:in ) / Ritala, M. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE Operations Center
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Erscheinungsort:Piscataway
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Erscheinungsdatum:2009
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Format / Umfang:4 Seiten, 7 Quellen
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacksDuenas, S. / Castan, H. / Garcia, H. / Gomez, A. / Bailon, L. / Toledano-Luque, M. / del Prado, A. / Martil, I. / Gonzalez-Diaz, G. et al. | 2009
- 5
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Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAsSilvestre, S. / Puigdollers, J. / Boronat, A. / Castaner, L. et al. | 2009
- 8
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Study of Atomic Layer Deposited Zirconium Oxide Thin Films by Using Mono-Cyclopentadienyl Based PrecursorsCastan, H. / Duenas, S. / Garcia, H. / Gomez, A. / Bailon, L. / Kukli, K. / Niinisto, J. / Ritala, M. / Leskela, M. et al. | 2009
- 12
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Atomistic simulations of the effect of implant parameters on Si damageLopez, Pedro / Pelaz, Lourdes / Marques, Luis Alberto / Aboy, Maria / Santos, Ivan et al. | 2009
- 16
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Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridationdel Prado, A. / Toledano-Luque, M. / Andres, E. San / Feijoo, P. C. / Lucia, M. L. et al. | 2009
- 19
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Ion Hit Emulation by LASER Beam ModelLopez-Calle, I. / Franco, F. J. / de Agapito, J. A. et al. | 2009
- 23
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Interfacial Properties of HfO2/ SiN/Si Gate StructuresToledano-Luque, M. / del Prado, A. / Feijoo, P. C. / Amezaga, A. / Andres, E. San / Lucia, M. L. et al. | 2009
- 27
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Thin high-k dielectric layers deposited by ALDCampabadal, F. / Zabala, M. / Rafi, J.M. / Acero, M.C. / Sainchez, A. / Sainchez, J. / Sainchez, S. / Andreu, R. et al. | 2009
- 31
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Comparison of bulk micromachined high voltage light scavengersBermejo, S. / Ortega, P. / Castaner, L. et al. | 2009
- 34
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Carrier mobility degradation in highly B-doped junctionsAboy, Maria / Pelaz, Lourdes / Lopez, Pedro / Bruno, E. / Mirabella, S. et al. | 2009
- 38
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High Quality Ti-Implanted Si Layers Above Solid Solubility LimitOlea, J. / Pastor, D. / Toledano-Luque, M. / San-Andres, E. / Martil, I. / Gonzalez-Diaz, G. et al. | 2009
- 42
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Pulsed Laser Melting Effects on Single Crystal Gallium PhosphidePastor, D. / Olea, J. / Toledano-Luque, M. / Martil, I. / Gonzalez-Diaz, G. / Ibanez, J. / Cusco, R. / Artus, L. et al. | 2009
- 46
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Comparison of static contact angle change and relaxation in EWOD devicesdi Virgilio, Vito / Castaner, Luis et al. | 2009
- 50
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Influence of Si surface on damage generation and recombinationSantos, Ivan / Marques, Luis A. / Pelaz, Lourdes / Lopez, Pedro / Aboy, Maria et al. | 2009
- 54
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Neutron Detection with Silicon DevicesGuardiola, C. / Lozano, M. / Pellegrini, G. et al. | 2009
- 57
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Ohmic Contacts to implanted GaNPlacidi, M. / Perez-Tomas, A. / Constant, A. / Rius, G. / Mestres, N. / Millan, J. / Godignon, P. et al. | 2009
- 61
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GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic DevicesConesa-Boj, S. / Arbiol, J. / Furtmayr, F. / Stark, C. / Schafer, S. / Stutzmann, M. / Eickhoff, M. / Peiro, F. / Morante, J. R. et al. | 2009
- 65
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(S)TEM tomography of AlAs-GaAs coaxial NanowiresRebled, Josep M. / Conesa-Boj, Sonia / Arbiol, Jordi / Peiro, Francesca / Morante, Joan R. / Heigoldt, Matthias / Spirkoska, Dance / Abstreiter, Gerhard / Morral, Anna Fontcuberta i et al. | 2009
- 69
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Study of the electroluminescence at 1.5 micrometer of SiOx:Er layers made by reactive magnetron sputteringJambois, O. / Berencen, Y. / Seo, S.Y. / Kenyon, A.J. / Wojdak, M. / Hijazi, K. / Khomenkova, L. / Gourbilleau, F. / Rizk, R. / Garrido, B. et al. | 2009
- 69
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Study of the electroluminescence at 1.5 μm of SiOx :Er layers made by reactive magnetron sputteringJambois, O. / Berencen, Y. / Seo, S.-Y. / Kenyon, A. J. / Wojdak, M. / Hijazi, K. / Khomenkova, L. / Gourbilleau, F. / Rizk, R. / Garrido, B. et al. | 2009
- 73
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Analytical Modeling of a Novel Heterojunction Bipolar Transistor StructureBasu, Sukla / Barman, Arpita et al. | 2009
- 77
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Investigation of a New Partial Ground Plane Based MOSFET on Selective Buried OxideLoan, Sajad A. / Qureshi, S. / Iyer, S. Sundar Kumar et al. | 2009
- 81
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Linearity study of DG MOSFETsLazaro, A. / Cerdeira, A. / Estrada, M. / Nae, B. / Iniguez, B. et al. | 2009
- 85
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Design of an Integrated 2x4 Decoder Based on the Quantum Well MODFET to Reduce the Scale of the ICShabani, Pejman et al. | 2009
- 88
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Design and Simulation of a Novel Nano Structure Quantum Well Voltage Regulator to have a Lower Regulated VoltageShabani, Pejman / Ganji, Jabbar et al. | 2009
- 92
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High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power ApplicationsAyubi-Moak, Jason S. / Kalna, K. / Asenov, A. et al. | 2009
- 96
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Comparative study of Laterally Asymmetric Channel and conventional MOSFETsRengel, Raul / Martin, Maria J. / Danneville, Francois et al. | 2009
- 100
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Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar TransistorsSachelarie, Dan / Predusca, Gabriel et al. | 2009
- 104
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A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulatorBalaguer, M. / Roldan, J. B. / Tienda-Luna, I. M. / Ruiz, F. G. / Godoy, A. / Gaimiz, F. / Sampedro, C. et al. | 2009
- 108
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Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo studyPascual, Elena / Rengel, Raul / Martin, Maria J. et al. | 2009
- 112
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High Frequency and Noise Model of Gate-All-Around MOSFETsNae, B. / Lazaro, A. / Iniguez, B. et al. | 2009
- 116
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Enclosed layout transistors in saturationLopez, P. / Hauer, J. / Filgueira, B. Blanco / Cabello, D. et al. | 2009
- 120
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Modeling and simulation of CMOS APSBlanco-Filgueira, Beatriz / Lopez, Paula / Cabello, Diego / Ernst, J. / Neubauer, H. / Hauer, Johann et al. | 2009
- 124
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Improvement of the k.p Approach for Describing Silicon Quantum DotsRodriguez-Bolivar, S. / Gomez-Campos, F. M. / Luque-Rodriguez, A. / Lopez-Villanueva, J. A. / Jimenez-Tejada, J. A. / Lara-Bullejos, P. / Carceller, J. E. et al. | 2009
- 128
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Monte Carlo Study of an InAlAs/InGaAs Velocity Modulation TransistorVasallo, Beatriz G. / Gonzalez, Tomas / Pardo, Daniel / Mateos, Javier et al. | 2009
- 132
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Effect of traps in the performance of Four Gate TransistorsRodriguez, A. Luque / Tejada, J. A. Jimenez / Godoy, A. / Villanueva, J. A. Lopez / Gomez-Campos, F. M. / Rodriguez-Bolivar, S. et al. | 2009
- 136
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Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETsTiwari, Pramod Kumar / Panda, Chinmaya Ranjan / Agarwal, Anupam / Sharma, Prateek / Jit, S. et al. | 2009
- 140
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Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFETBrown, Andrew R / Martinez, Antonio / Seoane, Natalia / Asenov, Asen et al. | 2009
- 144
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Simulation Methods for Ionizing Radiation Single Event Effects EvaluationFernandez-Martinez, P. / Mogollon, J. M. / Hidalgo, S. / Palomo, F. R. / Flores, D. / Aguirre, M. A. et al. | 2009
- 148
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Lateral Punch-Through TVS Devices: Design and FabricationUrresti, Jesus / Hidalgo, Salvador / Flores, David / Rebollo, Jose et al. | 2009
- 152
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Monte Carlo Simulation of Sb-based HeterostructuresRodilla, H. / Gonzailez, T. / Pardo, D. / Mateos, J. et al. | 2009
- 156
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Circuit-design oriented modelling of the recovery BTI component and post-BD gate currentsMartin-Martinez, J. / Kaczer, B. / Boix, J. / Ayala, N. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Zuber, P. / Dierickx, B. / Groeseneken, G. et al. | 2009
- 160
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Numerical simulation of a ferromagnetic spin-polarised diodeComesana, E. / Aldegunde, M. / Gehring, G. A. / Garcia-Loureiro, A. J. et al. | 2009
- 164
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Efficient 3D Drift - Diffusion simulations of Implant Free Heterostructure DevicesSeoane, Natalia / Garci-Loureiro, Antonio / Aldegunde, Manuel / Kalna, Karol / Asenov, Asen et al. | 2009
- 168
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Frequency response of T-shaped Three Branch Junctions as Mixers and DetectorsIniguez-de-la-Torre, I. / Gonzalez, T. / Pardo, D. / Gardes, C. / Roelens, Y. / Bollaert, S. / Mateos, J. et al. | 2009
- 172
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Using Grid Infrastructures for a Stationary DGSOI Monte Carlo SimulationValin, R. / Aldegunde, M. / Seoane, N. / Garcia-Loureiro, A. / Sampedro, C. / Godoy, A. / Gamiz, F. et al. | 2009
- 176
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On the computation of high frequency current in nanoelectronic ballistic devicesAlarcon, A. / Benali, A. / Albareda, G. / Oriols, X. et al. | 2009
- 180
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Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFsSeoane, Natalia / Martinez, Antonio / Brown, Andrew R. / Asenov, Asen et al. | 2009
- 184
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Simulated and experimental angular response of a commercial MOSFET used as dosimeterCarvajal, M. A. / Garcia-Pareja, S. / Vilches, M. / Guirado, D. / Anguiano, M. / Palma, A. J. / Lallena, A. M. et al. | 2009
- 188
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A complete model for electrical behaviour of single carrier organic diodes in the presence of a field-dependent mobilityAlvarez, A. L. / Romero, B. / Arredondo, B. / Quintana, X. / Mallavia, R. / Oton, J. M. et al. | 2009
- 192
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Accurate Simulation of the Electron Density of Surrounding Gate TransistorsRuiz, F. G. / Tienda-Luna, I. M. / Godoy, A. / Sampedro, C. / Gamiz, F. et al. | 2009
- 196
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Quantum-Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approachSampedro, Carlos / Valin, Raul / Gamiz, Francisco / Garcia-Loureiro, Antonio / Godoy, Andres / Ruiz, F. G. et al. | 2009
- 200
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3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETsGarcia-Loureiro, A. / Aldegunde, M. / Seoane, N. / Kalna, K. / Asenov, A. et al. | 2009
- 204
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Model Based Design of an Adaptive Transmission Module for Non-Line of Sight OFDM System (WiMAX)Mera, Maria I. / Estrada, Rebeca L. et al. | 2009
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3D Parallel Finite Element Monte Carlo Simulator With Quantum Corrections Using Density Gradient ApproachAldegunde, Manuel / Garcla-Loureiro, Antonio J. / Seoane, Natalia / Martinez, Antonio / Kalna, Karol et al. | 2009
- 211
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Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETsAldegunde, Manuel / Garcia-Loureiro, Antonio J. / Seoane, Natalia / Asenov, Asen / Kalna, Karol et al. | 2009
- 215
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Logarithmic Compensated Voltage ReferencePopa, C. et al. | 2009
- 219
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Hilbert Curve Based Lateral Flux CapacitorsGimeno, C. / Celma, S. / Calvo, B. / Revuelto, J. et al. | 2009
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Electrical characterization of high-k based MIS capacitors using flat-band voltage transientsGarcia, H. / Duenas, S. / Castan, H. / Gomez, A. / Bailon, L. / Kukli, K. / Hatanpaa, T. / Aarik, J. / Aidla, A. / Ritala, M. et al. | 2009
- 227
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Electrical characterization of ZrO2-based MIS structures with highly doped Si substratesGomez, A. / Duenas, S. / Castan, H. / Garcial, H. / Bailon, L. / Kukli, K. / Niinisto, J. / Ritala, M. / Leskela, M. et al. | 2009
- 231
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Experimental characterization of NBTI effect on pMOSFET and CMOS inverterFernandeza, R. / Kaczer, B. / Gago, J. / Rodriguez, R. / Nafria, M. et al. | 2009
- 234
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Improving the electrical performance of a CAFM for gate oxide reliability measurementsLanza, M. / Aguilera, L. / Porti, M. / Nafria, M. / Aymerich, X. et al. | 2009
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Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacksAmat, E. / Kauerauf, T. / Degraeve, R. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Groeseneken, G. et al. | 2009
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Characterization of a pH sensor based on an AlGaN/GaN transistorEroles, J. / Bengoechea, A. / Sanchez-Garcia, M.A. / Calle, F. et al. | 2009
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Characterization of a pH sensor based on an AlGiaN/GaN transistorEroles, J. / Bengoechea, A. / Sanchez-Garcia, M. A. / Calle, F. et al. | 2009
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Comparison between Heavy Ion and Pulsed Laser Simulation to reproduce SEE TestsFernandez-Martinez, P. / Lopez-Calle, I. / Hidalgo, S. / Franco, F. J. / Flores, D. / de Agapito, J.A. et al. | 2009
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Static and Dynamic Analysis of Split-Gate RESURF Stepped Oxide (RSO) MOSFETs for 35 V ApplicationsTong, C.F / Cortes, I. / Mawby, P.A. / Covington, J.A. / Morancho, F. et al. | 2009
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Analysis of the C-V characteristic in SiO2/GaN MOS capacitorsCortes, I / Al-Alam, E / Besland, MP / Regreny, P / Morancho, F / Cazarre, A / Cordier, Y / Goullet, A / Isoird, K et al. | 2009
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Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMTRomero, M. F. / Jimenez, A. / Palacio, C. / Diaz, D. / Munoz, E. et al. | 2009
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Liquid Aspiration Device Based on Venturi Effect Built on PDMSPerdigones, Francisco / Luque, Antonio / Quero, Jose M. et al. | 2009
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Sensitivity analysis of the chip for REMS wind sensorKowalski, L. / Ricart, J. / Jimenez, V. / Dominguez, M. / Castaner, L. et al. | 2009
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The Design of an Infrared Sensor for the Measurement of Martian Surface Temperature and Gas ConcentrationAranda, Jose M. / de Castro, Antonio J. / Melendez, Juan / Cortes, Francisco / Fernaindez-Gomez, Isabel / Lopez, Fernando et al. | 2009
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Saw Sensor Array for Chemical Warfare Agent SimulantsMarti, J. / Matatagui, D. / Fernandez, M. J. / Fontecha, J. L. / Aleixandre, M. / Gutierrez, F. J. / Horrillo, M.C. / Gracia, I. / Cane, C. et al. | 2009
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Laser scribing of very large 2,6m x 2,2m a-Si: H thin film photovoltaic modules.Borrajo, J. P. / Vetter, M. / Andreu, J et al. | 2009
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- 416
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Investigation of resistance in n-doped Si wires using NEGF formalismMartinez, Antonio / Brown, Andrew / Asenov, Asen / Seoane, Natalia et al. | 2009
- 420
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Electric power in ballistic devices: A reformulation with full Coulomb interactionAlbareda, G. / Alarcon, A. / Oriols, X. et al. | 2009
- 424
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Synthesis of Ordered Polymer Micro and Nanostructures Via Porous TemplatesPalacios, R. / Formentin, P. / Santos, A. / Pallares, J. / Trifonov, T. / Alcubilla, R. / Marsal, L. F. et al. | 2009
- 428
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Silicon microcantilevers with piezoresistive and MOSFET detectionTosolini, G. / Villanueva, G. / Bausells, J. et al. | 2009
- 428
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Silicon Microcantilevers with Piezoresistive and MSE DetectionTosolini, Giordano / Villanueva, Guillermo / Bausells, Joan et al. | 2009
- 432
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Monte-Carlo method in AFM calibrationGonzalez-Jorge, H. / Valencia, J. L. / Alvarez, V. / Rodriguez, F. / Yebra, F. J. et al. | 2009
- 436
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Modified hard anodization procedure to fabricate hybrid nanoporous aluminaSantos, A. / Vojkuvka, L. / Pallares, J. / Ferre-Borrull, J. / Marsal, L. F. et al. | 2009
- 440
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Emitter Geometry effects in 200 GHz SiGe Heterojunction Bipolar TransistorLopez-Gonzalez, Juan M. et al. | 2009
- 443
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High Temperature SiC Blocking Diodes for Solar ArrayMaset, E. / Sanchis-Kilders, E. / Jordan, J. / Ejea, J. Bta. / Ferreres, A. / Esteve, V. / Millan, J. / Godginon, P. / Jorda, X. et al. | 2009
- 447
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Effective Carrier Mobility Extraction Based on RF Modeling for Highly Leaky MOSFET Devices with Short Channel Length and Small AreaChoi, G. B. / Hong, S. H. / Choi, H. S. / Baek, R. H. / Lee, K. T. / Park, M. S. / Song, S. H. / Kim, J. C. / Sagong, H. C. / Takeuchi, H. et al. | 2009
- 451
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Capacitive and Resistive RF-MEMS switches 2.5D & 3D Electromagnetic and Circuit ModellingLlamas, M. A. / Pausas, E. / Pradell, L. / Girbau, D. / Aouba, S. / Villeneuve, C. / Puyal, V. / Pons, P. / Plana, R. / Colpo, S. et al. | 2009
- 455
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Design and Fabrication of 3.3 kV IGBTs for Traction ApplicationsFlores, D. / Hidalgo, S. / Rebollo, J. / Caramel, C. / Sanchez, J. L. / Austin, P. / Imbernon, E. et al. | 2009
- 459
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Monte Carlo analysis of thermal effects in GaN HEMTsMateos, J. / Perez, S. / Pardo, D. / Gonzalez, T. et al. | 2009
- 463
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Tunab e Tera ertz Resonance in Planar Asymmetric NanodiodesInguez-de-la-Torre, I. / Mateos, J. / Pardo, D. / Gonzalez, T. / Song, A. M. et al. | 2009
- 467
-
Equivalent circuit model for capacitances in PN varactors with buried channelMarrero-Martin, M. / Garcia, J. / Gonzalez, B. / Hernaindez, A. et al. | 2009
- 471
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Capacitance estimation of PN varactors based on unit cellsMarrero-Martin, M. / Gonzalez, B. / Garcia, J. / Hernandez, A. et al. | 2009
- 475
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Optimisation of low voltage Field Plate LDMOS transistorsCortes, I. / Morancho, F. / Flores, D. / Hidalgo, S. / Rebollo, J. et al. | 2009
- 479
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Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETsCalvo-Gallego, Jaime / Fobelets, Kristel / Perez, J.E. Velazquez et al. | 2009
- 483
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Author index| 2009
- i
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Covers| 2009
- ii
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Breaker pages| 2009
- iii
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Commentary| 2009
- ix
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Awards| 2009
- v
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Advertisements| 2009
- vi
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Staff or Society listings| 2009
- viii
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Reviewer and referee listings| 2009
- x
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Table of contents| 2009