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A CMOS image sensor - realized in a commercially available 0.18 micron CIS technology - for near 'single-photon detection' applications is presented. The pixel array features 1.2e- readout noise and 2.5e- overall noise comprising dark current shot noise effects at 60 frames per second (16 microsecond row-time). The 11 micron x 11 micron pixel (fill factor of 63%) provides a pixel conversion gain of 50 microV/e-. High-dynamic range of over 150 dB is achieved. Further research on noise in charge detector circuits has resulted in the invention of a novel ultra-low-noise pixel featuring in-pixel amplification enabling single-electron resolution imaging. A typical sense node referred readout noise of 0.9e- and an overall sense node referred noise floor of 1.5e- are measured at a pixel conversion gain of 300 microV/e-.