Si/Ge/Si double heterojunction solar cells (Englisch)
- Neue Suche nach: Lin, C.H.
- Neue Suche nach: Lin, C.H.
In:
Thin Solid Films
;
518
, 6
;
S255-S258
;
2010
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Si/Ge/Si double heterojunction solar cells
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Beteiligte:Lin, C.H. ( Autor:in )
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Erschienen in:Thin Solid Films ; 518, 6 ; S255-S258
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Verlag:
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Erscheinungsdatum:2010
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Format / Umfang:4 Seiten, 12 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 518, Ausgabe 6
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- iii
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Contents page| 2009
- iii
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Contents| 2009
- S1
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PrefaceXie, Ya-Hong / Liu, Jianlin / Bauer, Matthias et al. | 2009
- S2
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Low temperature growth of Ge1−xSnx buffer layers for tensile–strained Ge layersShimura, Yosuke / Tsutsui, Norimasa / Nakatsuka, Osamu / Sakai, Akira / Zaima, Shigeaki et al. | 2009
- S6
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Multiscale simulation for epitaxial silicon carbide growth by chlorides routeMasi, Maurizio / Fiorucci, Alessandro / Camarda, Massimo / La Magna, Antonino / La Via, Francesco et al. | 2009
- S12
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Analysis of silicon germanium vapor phase epitaxy kineticsTomasini, P. / Machkaoutsan, V. / Thomas, S.G. et al. | 2009
- S18
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Si1−xGex growth using Si3H8 by low temperature chemical vapor depositionTakeuchi, Shotaro / Nguyen, Ngoc Duy / Goosens, Jozefien / Caymax, Matty / Loo, Roger et al. | 2009
- S23
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Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperaturesStorck, Peter / Vorderwestner, Martin / Kondratyev, Alexey / Talalaev, Roman / Amamchyan, Art / Woelk, Egbert et al. | 2009
- S30
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Formation and characterization of hybrid nanodot stack structure for floating gate applicationMiyazaki, Seiichi / Makihara, Katsunori / Ikeda, Mitsuhisa et al. | 2009
- S35
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Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubesOlmedo, Mario / Martinez-Morales, Alfredo A. / Liu, Gang / Yengel, Emre / Ozkan, Cengiz S. / Lau, Chun Ning / Ozkan, Mihrimah / Liu, Jianlin et al. | 2009
- S38
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Observation of discrete dopant potential and its application to Si single-electron devicesTabe, Michiharu / Moraru, Daniel / Ligowski, Maciej / Anwar, Miftahul / Yokoi, Kiyohito / Jablonski, Ryszard / Mizuno, Takeshi et al. | 2009
- S44
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B atomic layer doping of GeYamamoto, Yuji / Köpke, Klaus / Kurps, Rainer / Murota, Junichi / Tillack, Bernd et al. | 2009
- S48
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Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32nm CMOS technologyNguyen, N.D. / Rosseel, E. / Takeuchi, S. / Everaert, J.-L. / Yang, L. / Goossens, J. / Moussa, A. / Clarysse, T. / Richard, O. / Bender, H. et al. | 2009
- S53
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Enabling Moore's Law beyond CMOS technologies through heteroepitaxyThomas, S.G. / Tomasini, P. / Bauer, M. / Vyne, B. / Zhang, Y. / Givens, M. / Devrajan, J. / Koester, S. / Lauer, I. et al. | 2009
- S57
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Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heatingSugawara, Katsutoshi / Sakuraba, Masao / Murota, Junichi et al. | 2009
- S62
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Heavy atomic-layer doping of nitrogen in Si1−xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVDKawashima, Tomoyuki / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2009
- S65
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Antimony doped Si Esaki diodes without post growth annealingOehme, M. / Kirfel, O. / Werner, J. / Kaschel, M. / Kasper, E. / Schulze, J. et al. | 2009
- S68
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Optimization of external poly base sheet resistance in 0.13 micrometer quasi self-aligned SiGe:C HBTsYou, S. / Huylenbroeck, S. / Nguyen, N.D. / Sibaja-Hernandez, A. / Venegas, R. / Wichelen, K. / Decoutere, S. / Meyer, K. et al. | 2010
- S68
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Optimization of external poly base sheet resistance in 0.13μm quasi self-aligned SiGe:C HBTsYou, S. / Van Huylenbroeck, S. / Nguyen, N.D. / Sibaja-Hernandez, A. / Venegas, R. / Van Wichelen, K. / Decoutere, S. / De Meyer, K. et al. | 2009
- S72
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Simulation of a nanoscale strained Si NMOSFET with a silicon–carbon alloy stressorHuang, Jacky / Chang, Shu-Tong / Wang, Wei-Ching / Lee, Chang-Chun et al. | 2009
- S76
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Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cellsLee, Minjoo Larry / Dezsi, Geza / Venkatasubramanian, Rama et al. | 2009
- S80
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Epitaxially grown emitters for thin film silicon solar cells result in 16% efficiencyVan Nieuwenhuysen, K. / Payo, M. Récaman / Kuzma-Filipek, I. / Van Hoeymissen, J. / Beaucarne, G. / Poortmans, J. et al. | 2009
- S83
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Germanium for silicon photonicsIshikawa, Yasuhiko / Wada, Kazumi et al. | 2009
- S88
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Short-channel epitaxial germanium pMOS transistorsEneman, G. / De Jaeger, B. / Wang, G. / Mitard, J. / Hellings, G. / Brunco, D.P. / Simoen, E. / Loo, R. / Caymax, M. / Claeys, C. et al. | 2009
- S92
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Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesasDechoux, N. / Damlencourt, J.F. / Rivallin, P. / Brianceau, P. / Bernasconi, S. / Benevent, V. / Vallée, C. / Barbe, J.C. / Billon, T. / Bensahel, D. et al. | 2009
- S96
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High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitorsMolle, Alessandro / Baldovino, Silvia / Spiga, Sabina / Fanciulli, Marco et al. | 2009
- S104
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Quest of electric field controlled spintronics in MnGeWang, Kang L. / Xiu, Faxian et al. | 2009
- S113
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Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxySpiesser, A. / Olive-Mendez, S.F. / Dau, M.-T. / Michez, L.A. / Watanabe, A. / Le Thanh, V. / Glachant, A. / Derrien, J. / Barski, A. / Jamet, M. et al. | 2009
- S118
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Structural properties of epitaxial SrHfO3 thin films on Si (001)Sawkar-Mathur, Monica / Marchiori, Chiara / Fompeyrine, Jean / Toney, Michael F. / Bargar, John / Chang, Jane P. et al. | 2009
- S123
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Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacksMolle, Alessandro / Lamagna, Luca / Spiga, Sabina / Fanciulli, Marco / Brammertz, Guy / Meuris, Marc et al. | 2009
- S128
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Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel filmsLiu, Wei / Chung, Choong-Heui / Miao, Cong-Qin / Wang, Yan-Jie / Li, Bi-Yun / Ruan, Ling-Yan / Patel, Ketan / Park, Young-Ju / Woo, Jason / Xie, Ya-Hong et al. | 2009
- S133
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Stability of silicon germanium stressorsTomasini, P. / Machkaoutsan, V. / Thomas, S.G. / Loo, R. / Caymax, M. / Verheyen, P. et al. | 2009
- S136
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Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on SiKobayashi, S. / Nishi, Y. / Saraswat, K.C. et al. | 2009
- S140
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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVDNosaka, Takayuki / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2009
- S143
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Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layersConde, J.C. / Chiussi, S. / Martín, E. / Gontad, F. / Fornarini, L. / Leon, B. et al. | 2009
- S147
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Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealingKato, T. / Nakamura, Y. / Kikkawa, J. / Sakai, A. / Toyoda, E. / Izunome, K. / Nakatsuka, O. / Zaima, S. / Imai, Y. / Kimura, S. et al. | 2009
- S151
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Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1−x−yGexCy on Si (1 0 0) using Raman spectroscopyWasyluk, Joanna / Perova, Tatiana S. / Meyer, Francoise et al. | 2009
- S154
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Effective mass and subband structure of strained Si in a PMOS inversion layer with external stressChang, Shu-Tong / Huang, Jacky / Tang, Ming / Lin, Chung-Yi et al. | 2009
- S159
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Extended study of the step-bunching mechanism during the homoepitaxial growth of SiCCamarda, M. / La Magna, A. / Severino, A. / La Via, F. et al. | 2009
- S162
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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantationHoshi, Y. / Sawano, K. / Yamada, A. / Arimoto, K. / Usami, N. / Nakagawa, K. / Shiraki, Y. et al. | 2009
- S165
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High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substratesSeverino, A. / Bongiorno, C. / Piluso, N. / Italia, M. / Camarda, M. / Mauceri, M. / Condorelli, G. / Di Stefano, M.A. / Cafra, B. / La Magna, A. et al. | 2009
- S170
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Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxyTanaka, T. / Tanaka, M. / Itakura, M. / Sadoh, T. / Miyao, M. et al. | 2009
- S174
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Al-induced low-temperature crystallization of Si1−xGex (0<x<1) by controlling layer exchange processKurosawa, Masashi / Sadoh, Taizoh / Miyao, Masanobu et al. | 2009
- S179
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Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxyToko, Kaoru / Tanaka, Takanori / Sadoh, Taizoh / Miyao, Masanobu et al. | 2009
- S182
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Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seedToko, Kaoru / Sakane, Takashi / Tanaka, Takanori / Sadoh, Taizoh / Miyao, Masanobu et al. | 2009
- S186
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Fabrication of double-dot single-electron transistor in silicon nanowireJo, Mingyu / Kaizawa, Takuya / Arita, Masashi / Fujiwara, Akira / Ono, Yukinori / Inokawa, Hiroshi / Choi, Jung-Bum / Takahashi, Yasuo et al. | 2009
- S190
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Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrateCheng, S.L. / Chen, C.Y. / Lee, S.W. et al. | 2009
- S196
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Composition redistribution of self-assembled Ge islands on Si (001) during annealingLee, S.W. / Chang, H.T. / Lee, C.H. / Cheng, S.L. / Liu, C.W. et al. | 2009
- S200
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Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloysBauer, M. / Thomas, S.G. et al. | 2009
- S204
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Optical and structural investigation of Si nanoclusters in amorphous hydrogenated siliconShcherbyna, Ye. S. / Torchynska, T.V. et al. | 2009
- S208
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Surface phonons and exciton–polariton coupling in SiC nanocrystalsPolupan, G. / Torchynska, T.V. et al. | 2009
- S212
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Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memoryChouket, A. / Elhouichet, H. / Koyama, H. / Gelloz, B. / Oueslati, M. / Koshida, N. et al. | 2009
- S217
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Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidationHu, Quanli / Seo, Il / Zhang, Zhenning / Lee, Seung-Hyun / Kim, Hyun-Mi / Kim, Soo-Hyun / Kim, Yong-Sang / Lee, Hyun Ho / Xie, Ya-Hong / Kim, Ki-Bum et al. | 2009
- S222
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Heavy carbon atomic-layer doping at Si1−xGex/Si heterointerfaceHirano, Tomoya / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2009
- S226
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Formation processes of Ge3N4 films by radical nitridation and their electrical propertiesKato, Kimihiko / Kondo, Hiroki / Sakashita, Mitsuo / Zaima, Shigeaki et al. | 2009
- S231
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Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer dopingChiba, Yohei / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2009
- S234
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Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGeWerner, J. / Oehme, M. / Kasper, E. / Schulze, J. et al. | 2009
- S237
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Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positionsLin, C.-H. / Liu, C.W. et al. | 2009
- S241
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Strain engineering of nanoscale Si MOS devicesHuang, Jacky / Chang, Shu-Tong / Hsieh, Bing-Fong / Liao, Ming-Han / Wang, Wei-Ching / Lee, Chang-Chun et al. | 2009
- S246
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The gap state density of micro/nano-crystalline silicon active layer on flexible substrateLee, M.H. / Chang, S.T. / Lee, C.-C. / Huang, J.-J. / Hu, G.-R. / Huang, Y.-S. et al. | 2009
- S250
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TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cellsChang, S.T. / Tang, M. / He, R.Y. / Wang, W.-C. / Pei, Z. / Kung, C.-Y. et al. | 2009
- S255
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Si/Ge/Si double heterojunction solar cellsLin, C.-H. et al. | 2009
- S259
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Simulation of nanorod structures for an amorphous silicon-based solar cellTang, Ming / Chang, Shu-Tong / Chen, Tzu-Chun / Pei, Zingway / Wang, Wei-Ching / Huang, Jacky et al. | 2009
- S262
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Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory applicationLi, Bei / Liu, Jianlin et al. | 2009
- S266
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Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructuresDau, M.-T. / Spiesser, A. / LeGiang, T. / Michez, L.A. / Olive-Mendez, S.F. / Le Thanh, V. / Petit, M. / Raimundo, J.-M. / Glachant, A. / Derrien, J. et al. | 2009
- S270
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Phosphorus doping of silicon at substrate temperatures above 600^oCThompson, P. E. / Jernigan, G. G. / Simons, D. / Chi, P. / Jonker, B. T. / Erve, O. M. et al. | 2010
- S270
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Phosphorus doping of silicon at substrate temperatures above 600°CThompson, P.E. / Jernigan, G.G. / Simons, D. / Chi, P. / Jonker, B.T. / Erve, O.M.J. van 't et al. | 2009
- S270
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Phosphorus doping of silicon at substrate temperatures above 600 degrees CThompson, P.E. / Jernigan, G.G. / Simons, D. / Chi, P. / Jonker, B.T. / t'Erve, O.M.J. et al. | 2010
- S273
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Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devicesMiyao, M. / Hamaya, K. / Sadoh, T. / Itoh, H. / Maeda, Y. et al. | 2009
- S278
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Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxyYamada, S. / Yamamoto, K. / Ueda, K. / Ando, Y. / Hamaya, K. / Sadoh, T. / Miyao, M. et al. | 2009
- S281
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Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectricsCosceev, A. / Müller-Sajak, D. / Pfnür, H. / Hofmann, K.R. et al. | 2009