Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy (Englisch)
- Neue Suche nach: Zhao, W.F.
- Neue Suche nach: Jacobs, R.N.
- Neue Suche nach: Jaime-Vasquez, M.
- Neue Suche nach: Bubulac, L.O.
- Neue Suche nach: Smith, David J.
- Neue Suche nach: Zhao, W.F.
- Neue Suche nach: Jacobs, R.N.
- Neue Suche nach: Jaime-Vasquez, M.
- Neue Suche nach: Bubulac, L.O.
- Neue Suche nach: Smith, David J.
In:
Journal of Electronic Materials
;
40
, 8
;
1733-1737
;
2011
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy
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Beteiligte:Zhao, W.F. ( Autor:in ) / Jacobs, R.N. ( Autor:in ) / Jaime-Vasquez, M. ( Autor:in ) / Bubulac, L.O. ( Autor:in ) / Smith, David J. ( Autor:in )
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Erschienen in:Journal of Electronic Materials ; 40, 8 ; 1733-1737
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Verlag:
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Erscheinungsdatum:2011
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Format / Umfang:5 Seiten, 21 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Pufferschicht , Cadmiumverbindung , chemische Analyse , Kristallmikrostruktur , Elementhalbleiter , Zwei-Sechs-Verbindung , Gitterkonstante (Kristallgitter) , Molekularstrahlepitaxie , Halbleiterepitaxialschicht , Halbleiterwachstum , Heteroübergang , Silicium , Stapelfehler , Transmissionselektronenmikroskopie , Zinkverbindung , Mikrostruktur , Halbleiterwerkstoff , Heterostruktur
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Datenquelle:
Inhaltsverzeichnis – Band 40, Ausgabe 8
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