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Yttria stabilized zirconia (YSZ) thin films are deposited by ultrasonic aerosol assisted chemical vapor deposition (UAA-CVD). This method combines advantages of a simple and economic ultrasonic spray pyrolysis setup with homogeneous thin film growth by chemical vapor deposition. Randomly oriented nanocrystalline or columnar YSZ thin films are obtained by gas phase deposition for substrate temperatures between 300 °C and 650 °C. The resulting thin films are of much lower surface roughness than those obtained by wet spray pyrolysis and can be deposited over large substrate areas (e.g. 2" diameter).The yttrium concentration of the thin films deviates from that of their precursor solutions due to different deposition rates of the gaseous precursor species. However, the yttrium transfer ratio from precursor solution to thin film shows a linear behavior and is constant for varying deposition conditions. Therefore, the desired doping concentration (e.g. of 8YSZ) is easily obtained by adjusting the cation concentration of the precursor solution. UAA-CVD shows potential as an alternative method to current vacuum and non-vacuum deposition techniques for YSZ electrolytes in micro solid oxide fuel cells.