Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC (Englisch)
- Neue Suche nach: Kuchuk, A.
- Neue Suche nach: Kladko, V.
- Neue Suche nach: Adamus, Z.
- Neue Suche nach: Wzorek, M.
- Neue Suche nach: Borysiewicz, M.
- Neue Suche nach: Borowicz, P.
- Neue Suche nach: Barcz, A.
- Neue Suche nach: Golaszewska, K.
- Neue Suche nach: Piotrowska, A.
- Neue Suche nach: Chiou, C.W.
- Neue Suche nach: Mao, L.F.
- Neue Suche nach: Kuchuk, A.
- Neue Suche nach: Kladko, V.
- Neue Suche nach: Adamus, Z.
- Neue Suche nach: Wzorek, M.
- Neue Suche nach: Borysiewicz, M.
- Neue Suche nach: Borowicz, P.
- Neue Suche nach: Barcz, A.
- Neue Suche nach: Golaszewska, K.
- Neue Suche nach: Piotrowska, A.
- Neue Suche nach: Chiou, C.W.
- Neue Suche nach: Mao, L.F.
In:
ISRN Electronics
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2013
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1-5
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2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC
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Beteiligte:Kuchuk, A. ( Autor:in ) / Kladko, V. ( Autor:in ) / Adamus, Z. ( Autor:in ) / Wzorek, M. ( Autor:in ) / Borysiewicz, M. ( Autor:in ) / Borowicz, P. ( Autor:in ) / Barcz, A. ( Autor:in ) / Golaszewska, K. ( Autor:in ) / Piotrowska, A. ( Autor:in ) / Chiou, C.W. ( Autor:in )
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Erschienen in:ISRN Electronics ; 2013 ; 1-5
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Verlag:
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Erscheinungsdatum:2013
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Format / Umfang:5 Seiten, 20 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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