Fabrication of a SiC double gate vertical channel JFET and it's application in power electronics (Englisch)
- Neue Suche nach: Schöner, A.
- Neue Suche nach: Bakowski, M.
- Neue Suche nach: Malhan, R.K.
- Neue Suche nach: Takeuchi, Y.
- Neue Suche nach: Sugiyama, N.
- Neue Suche nach: Rabkowski, J.
- Neue Suche nach: Peftitsis, D.
- Neue Suche nach: Ranstad, P.
- Neue Suche nach: Nee, H.P.
- Neue Suche nach: Schöner, A.
- Neue Suche nach: Bakowski, M.
- Neue Suche nach: Malhan, R.K.
- Neue Suche nach: Takeuchi, Y.
- Neue Suche nach: Sugiyama, N.
- Neue Suche nach: Rabkowski, J.
- Neue Suche nach: Peftitsis, D.
- Neue Suche nach: Ranstad, P.
- Neue Suche nach: Nee, H.P.
In:
Meeting of the Electrochemical Society, 222, Gallium Nitride and Silicon Carbide Power Technologies, 2
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25-35
;
2012
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Fabrication of a SiC double gate vertical channel JFET and it's application in power electronics
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Weitere Titelangaben:Herstellung von SiC-Doppel-Gate-Vertical-Channel-JFET und dessen Anwendung in der Leistungselektronik
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Beteiligte:Schöner, A. ( Autor:in ) / Bakowski, M. ( Autor:in ) / Malhan, R.K. ( Autor:in ) / Takeuchi, Y. ( Autor:in ) / Sugiyama, N. ( Autor:in ) / Rabkowski, J. ( Autor:in ) / Peftitsis, D. ( Autor:in ) / Ranstad, P. ( Autor:in ) / Nee, H.P. ( Autor:in )
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Erschienen in:ECS Transactions ; 50, 3 ; 25-35
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington
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Erscheinungsdatum:2012
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Format / Umfang:11 Seiten, 10 Bilder, 37 Quellen
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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