Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW (Englisch)
- Neue Suche nach: Sumpf, Bernd
- Neue Suche nach: Fricke, Jörg
- Neue Suche nach: Maiwald, Martin
- Neue Suche nach: Müller, Andre
- Neue Suche nach: Ressel, Peter
- Neue Suche nach: Bugge, Frank
- Neue Suche nach: Erbert, Götz
- Neue Suche nach: Tränkle, Günther
- Neue Suche nach: Sumpf, Bernd
- Neue Suche nach: Fricke, Jörg
- Neue Suche nach: Maiwald, Martin
- Neue Suche nach: Müller, Andre
- Neue Suche nach: Ressel, Peter
- Neue Suche nach: Bugge, Frank
- Neue Suche nach: Erbert, Götz
- Neue Suche nach: Tränkle, Günther
In:
Semiconductor Science and Technology
;
29
, 4
;
045025/1-045025/6
;
2014
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW
-
Beteiligte:Sumpf, Bernd ( Autor:in ) / Fricke, Jörg ( Autor:in ) / Maiwald, Martin ( Autor:in ) / Müller, Andre ( Autor:in ) / Ressel, Peter ( Autor:in ) / Bugge, Frank ( Autor:in ) / Erbert, Götz ( Autor:in ) / Tränkle, Günther ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 29, 4 ; 045025/1-045025/6
-
Verlag:
-
Erscheinungsdatum:2014
-
Format / Umfang:6 Seiten, 16 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 29, Ausgabe 4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 043001
-
Atomic layer deposition of ZnO: a reviewTommi Tynell / Maarit Karppinen et al. | 2014
- 043002
-
Dynamical generation of spin currentsKazuya Ando et al. | 2014
- 045001
-
Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistorsIn-Tak Cho / Myeonghun U / Sang-Hun Song / Jong-Ho Lee / Hyuck-In Kwon et al. | 2014
- 045002
-
A novel substrate termination technology for lateral double-diffused MOSFET based on curved junction extensionMing Qiao / Wenjie Wu / Bo Zhang / Zhaoji Li et al. | 2014
- 045003
-
Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulatorR Stoklas / D Gregušová / K Hušeková / J Marek / P Kordoš et al. | 2014
- 045004
-
Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursorsToshiharu Kubo / Joseph J Freedsman / Yasuhiro Iwata / Takashi Egawa et al. | 2014
- 045005
-
Statistical study of the influence of LER and MGG in SOI MOSFETG Indalecio / M Aldegunde / N Seoane / K Kalna / A J García-Loureiro et al. | 2014
- 045006
-
Design considerations for II–VI multi-gate transistors: the case of cadmium sulfideJ Conde / I Mejia / F S Aguirre-Tostado / C Young / M A Quevedo-Lopez et al. | 2014
- 045007
-
Optical absorption of semiconductor quantum dot solidsBiljana Pejova et al. | 2014
- 045008
-
Strain-dependent intersubband absorption in the valence band of SiGe quantum wellsA I Yakimov / V V Kirienko / V A Armbrister / A A Bloshkin et al. | 2014
- 045009
-
Transferable self-supporting ZnO porous films for low-cost piezoresistive sensorsQiongfang Zeng / Dingyou Lei / Yinggui Zhang / Huihui Huang et al. | 2014
- 045010
-
Comparative theoretical and experimental studies of two designs of high-power diode lasersK H Hasler / H Wenzel / P Crump / S Knigge / A Maasdorf / R Platz / R Staske / G Erbert et al. | 2014
- 045011
-
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxyStephen W Kaun / Elaheh Ahmadi / Baishakhi Mazumder / Feng Wu / Erin C H Kyle / Peter G Burke / Umesh K Mishra / James S Speck et al. | 2014
- 045012
-
Effect of hydrogen on ZnO films and Au/ZnO Schottky contactsC Tsiarapas / D Girginoudi / N Georgoulas et al. | 2014
- 045013
-
Multiphononon resonant Raman scattering in He+-implanted InGaNN Domènech-Amador / R Cuscó / R García-Hernansanz / G González-Díaz / J Gandhi / A Bensaoula / L Artús et al. | 2014
- 045014
-
Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functionsTomohiro Nozawa / Yasuhiko Arakawa et al. | 2014
- 045015
-
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGal xN/GaN heterostructuresFeng, Y. / Liu, G. / Yang, S. / Wei, H. / Liu, X. / Zhu, Q. / Wang, Z. et al. | 2014
- 045015
-
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1−xN/GaN heterostructuresYuxia Feng / Guipeng Liu / Shaoyan Yang / Hongyuan Wei / Xianglin Liu / Qinsheng Zhu / Zhanguo Wang et al. | 2014
- 045016
-
Removal of GaAs growth substrates from II–VI semiconductor heterostructuresS Bieker / P R Hartmann / T Kießling / M Rüth / C Schumacher / C Gould / W Ossau / L W Molenkamp et al. | 2014
- 045017
-
Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticlesR Yatskiv / J Grym / V V Brus / O Cernohorsky / P D Maryanchuk / C Bazioti / G P Dimitrakopulos / Ph Komninou et al. | 2014
- 045018
-
Hot-phonon lifetime in Al0.23Ga0.77N/GaN channelsJ Liberis / M Ramonas / E Šermukšnis / P Sakalas / N Szabo / M Schuster / A Wachowiak / A Matulionis et al. | 2014
- 045019
-
Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory applicationGuoxing Chen / Zongliang Huo / Lei Jin / Dong Zhang / Shengjie Zhao / Yulong Han / Su Liu / Ming Liu et al. | 2014
- 045020
-
Characterization of doped PEDOT: PSS and its influence on the performance and degradation of organic solar cellsVinamrita Singh / Swati Arora / Manoj Arora / Vishal Sharma / R P Tandon et al. | 2014
- 045021
-
Zinc oxide thin films on silicon carbide substrates (ZnO/SiC): electro-optical properties and electrically active defectsJ F Felix / M Aziz / C I L de Araujo / W M de Azevedo / V Anjos / E F da Silva Jr / M Henini et al. | 2014
- 045022
-
Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructuresM Mikulics / H Hardtdegen / R Adam / D Grützmacher / D Gregušová / J Novák / P Kordoš / Z Sofer / J Serafini / J Zhang et al. | 2014
- 045023
-
A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterizationChan-Yong Jeong / Daeun Lee / Sang-Hun Song / Jong In Kim / Jong-Ho Lee / Hyuck-In Kwon et al. | 2014
- 045024
-
Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperatureMin-Kyu Joo / Mireille Mouis / Dae-Young Jeon / Sylvain Barraud / So Jeong Park / Gyu-Tae Kim / Gérard Ghibaudo et al. | 2014
- 045025
-
Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mWBernd Sumpf / Jörg Fricke / Martin Maiwald / André Müller / Peter Ressel / Frank Bugge / Götz Erbert / Günther Tränkle et al. | 2014
- 045026
-
White organic light-emitting devices with high color purity and stabilityYajie Bai / Su Liu / Hairong Li / Chunjuan Liu / Jinshun Wang / Jinxian Chang et al. | 2014