Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping (Englisch)
- Neue Suche nach: Kort, Kenneth R.
- Neue Suche nach: Hung, P.Y.
- Neue Suche nach: Lysaght, Patrick D.
- Neue Suche nach: Loh, Wei-Yip
- Neue Suche nach: Bersuker, Gennadi
- Neue Suche nach: Banerjee, Sarbajit
- Neue Suche nach: Kort, Kenneth R.
- Neue Suche nach: Hung, P.Y.
- Neue Suche nach: Lysaght, Patrick D.
- Neue Suche nach: Loh, Wei-Yip
- Neue Suche nach: Bersuker, Gennadi
- Neue Suche nach: Banerjee, Sarbajit
In:
PCCP. Physical Chemistry Chemical Physics - An International Journal
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16
, 14
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6539-6543
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2014
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping
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Beteiligte:Kort, Kenneth R. ( Autor:in ) / Hung, P.Y. ( Autor:in ) / Lysaght, Patrick D. ( Autor:in ) / Loh, Wei-Yip ( Autor:in ) / Bersuker, Gennadi ( Autor:in ) / Banerjee, Sarbajit ( Autor:in )
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Erschienen in:PCCP. Physical Chemistry Chemical Physics - An International Journal ; 16, 14 ; 6539-6543
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Verlag:
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Erscheinungsdatum:2014
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Format / Umfang:5 Seiten, 19 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 16, Ausgabe 14
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Back cover| 2014