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The necessity to find new forms of renewable energy is very important and urgent nowadays. The renewable sources of energy derived from the sun are one of the promising options. The photovoltaic cells as one of renewable energy sources have been largely studied in order to obtain cheap, efficient and secure PV cells. The conversion efficiency is the most important property in the PV domain. The most important aim of PV manufacturers is to reduce the price of the solar cells and increase their efficiencies above the Shockley Queisser limit. Third generation concepts have been studied recently in an attempt to improve solar cell efficiency above this limit. The impurity photovoltaic (IPV) effect is one of these concepts used to augment cell infrared response and therefore enhance cell conversion efficiency. The idea of the IPV effect is based on the insertion of deep defects in the solar cell. These defects provide a multistep absorption mechanism for sub-band gap photons to create new electron-hole pairs. In this paper we study numerically the potential of the IPV effect in crystalline silicon solar cell doped with a new IPV impurity. We investigate the effect of certain impurity and structure parameters on silicon solar cell characteristics such as short circuit current density Jsc, open circuit voltage Voc, conversion efficiency and quantum efficiency QE using SCAPS simulator. We find that the incorporation of the IPV impurities into silicon solar cells can enhance spectral response, short circuit current density and conversion efficiency only under some conditions.