Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition (Englisch)
- Neue Suche nach: Zhou, Kun
- Neue Suche nach: Ikeda, Masao
- Neue Suche nach: Liu, Jianping
- Neue Suche nach: Zhang, Shuming
- Neue Suche nach: Li, Zengcheng
- Neue Suche nach: Feng, Meixin
- Neue Suche nach: Tian, Aiqin
- Neue Suche nach: Wen, Pengyan
- Neue Suche nach: Li, Deyao
- Neue Suche nach: Zhang, Liqun
- Neue Suche nach: Yang, Hui
- Neue Suche nach: Zhou, Kun
- Neue Suche nach: Ikeda, Masao
- Neue Suche nach: Liu, Jianping
- Neue Suche nach: Zhang, Shuming
- Neue Suche nach: Li, Zengcheng
- Neue Suche nach: Feng, Meixin
- Neue Suche nach: Tian, Aiqin
- Neue Suche nach: Wen, Pengyan
- Neue Suche nach: Li, Deyao
- Neue Suche nach: Zhang, Liqun
- Neue Suche nach: Yang, Hui
In:
Journal of Crystal Growth
;
409
;
51-55
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
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Beteiligte:Zhou, Kun ( Autor:in ) / Ikeda, Masao ( Autor:in ) / Liu, Jianping ( Autor:in ) / Zhang, Shuming ( Autor:in ) / Li, Zengcheng ( Autor:in ) / Feng, Meixin ( Autor:in ) / Tian, Aiqin ( Autor:in ) / Wen, Pengyan ( Autor:in ) / Li, Deyao ( Autor:in ) / Zhang, Liqun ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 409 ; 51-55
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Verlag:
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Erscheinungsdatum:2015
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Format / Umfang:5 Seiten, 15 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 409
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