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Ion-implanted photoresist is known to be difficult to remove using plasma ashing because of its carbonized top layer. After ion implantation, heating of the wafer substrate in ashers can cause resist popping if the temperature exceeds the implantation bake temperature. This paper presents chamber contamination measurements following ashing of implanted photoresist. Among the four implant species tested, boron resulted in the most severe resist popping. Higher implant dose, energy and ashing temperature also caused more popping of the resist. In general, more severe resist popping during ashing caused more residues to be left on subsequent wafer put through the chamber. The type of asher had a large effect on redeposition of residues on subsequent wafers.