1.5 V ultrawide-band GaAs monolithic amplifier for portable wireless LAN and satellite communication applications (Englisch)
- Neue Suche nach: Youn, Kwang-Jun
- Neue Suche nach: Yang, Jeon-Wook
- Neue Suche nach: Lee, Chang-Seok
- Neue Suche nach: Kim, Min-Kun
- Neue Suche nach: Kang, Sug-Bong
- Neue Suche nach: Park, Seong-Su
- Neue Suche nach: Kim, Dong-Goo
- Neue Suche nach: Park, Chul-Soon
- Neue Suche nach: Hwang, In-Duk
- Neue Suche nach: Youn, Kwang-Jun
- Neue Suche nach: Yang, Jeon-Wook
- Neue Suche nach: Lee, Chang-Seok
- Neue Suche nach: Kim, Min-Kun
- Neue Suche nach: Kang, Sug-Bong
- Neue Suche nach: Park, Seong-Su
- Neue Suche nach: Kim, Dong-Goo
- Neue Suche nach: Park, Chul-Soon
- Neue Suche nach: Hwang, In-Duk
In:
Annual IEEE GaAs IC Symposium, 16
;
163-166
;
1994
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:1.5 V ultrawide-band GaAs monolithic amplifier for portable wireless LAN and satellite communication applications
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Weitere Titelangaben:Integrierter Verstärker aus Galliumarsenid bei 1,5 Volt Betriebsspannung mit sehr großer Bandbreite für Anwendungen in beweglichen Funkdiensten wie tragbarem LAN-Anschluß oder Satellitenkommunikation
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Beteiligte:Youn, Kwang-Jun ( Autor:in ) / Yang, Jeon-Wook ( Autor:in ) / Lee, Chang-Seok ( Autor:in ) / Kim, Min-Kun ( Autor:in ) / Kang, Sug-Bong ( Autor:in ) / Park, Seong-Su ( Autor:in ) / Kim, Dong-Goo ( Autor:in ) / Park, Chul-Soon ( Autor:in ) / Hwang, In-Duk ( Autor:in )
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Erschienen in:Annual IEEE GaAs IC Symposium, 16 ; 163-166
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Verlag:
- Neue Suche nach: IEEE Service Center
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Erscheinungsort:Piscataway
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Erscheinungsdatum:1994
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Format / Umfang:4 Seiten, 7 Bilder, 1 Tabelle, 5 Quellen
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Halbleiterverstärker , rauscharmer Verstärker , Rauscheigenschaft , Übertragungsfunktion , beweglicher Funkdienst , lokales Netz , Satellitenübertragung , integrierte Mikrowellenschaltung , S-Band , X-Band , Bandbreite (Frequenz) , Galliumarsenid , Betriebsspannung , Mikrowellenverstärker , Verlustleistung , Frequenzgang , Dynamikkompression , MES-FET , Blockschaltbild , Schaltungssimulation , Versuchsergebnis , Halbleitertechnologie , Produktivität , Rückkopplung
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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MMIC's for Space-Borne Systems: Status and ProspectivesCazaux, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 7
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Gigabit Networking Technologies and BeyondCheung, N. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 9
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Progress in Quantum Functional Devices to Overcome Barriers to ULSI ScalingGoronkin, H. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 13
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Advanced III-V Materials Processing in Thevacuum of SpaceIgnatiev, A. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 17
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GaAs Performance in Si Technology: SiGe HBTS for Mixed Analog-Digital ApplicationsStork, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 27
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MMIC Phase Locked L-S Band OscillatorsSmuk, J. W. / Katzin, P. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 30
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A V-Band AlGaAs/InGaAs Heterojunction FET MMIC Dielectric Resonator OscillatorFunabashi, M. / Ohata, K. / Onda, K. / Hosoya, K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 34
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An 800 MHz Monolithic GaAs HBT Serrodyne ModulatorKushner, L. J. / Van Andrews, G. / White, W. A. / Delaney, J. B. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 38
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MMIC Gyrator Bandstop Filter with UltrawidebandtuningMarsh, S. P. / Arnold, R. G. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 41
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Active, Self-Adjusting L-S Band MMIC FiltersKatzin, P. / Aparin, V. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 47
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A GaAs BIFET LSI TechnologyHo, W. J. / Chang, M. F. / Beccue, S. M. / Zampardi, P. J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 51
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Ultra Low Power AlGaAs/InGaAs HJFET SCFL Circuit for 10 GBPS Applications with 1.3V Supply VoltageFuji, M. / Maeda, T. / Ohno, Y. / Tokushima, M. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 55
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0.9V DSP Blocks: A 15NS 4K SRAM and a 45NS 16BIT Multiply/AccumulatorHallmark, J. A. / Shurboff, C. / Ooms, B. / Lucero, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 59
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Complementary GaAs Junction-Gated Heterostructure Field Effect Transistor TechnologyBaca, A. G. / Zolper, J. C. / Sherwin, M. E. / Robertson, P. J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 63
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2.5GB/S 8X8 Self-Routing Switch GaAs LSIS for ATM Switching SystemsYamada, H. / Tunotani, M. / Kaneyama, F. / Seki, S. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 67
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A 500 MHz Variable-Voltage Bidirectional I/O Pad for Digital GaAs ApplicationsSherhart, P. J. / Upton, M. D. / Lomax, R. J. / Brown, R. B. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 71
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Power Rail Logic: A Low Power Logic Style for Digital GaAs CircuitsChandna, A. / Brown, R. B. / Putti, D. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 81
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Developments in Transport Telematics in EuropeHills, P. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 84
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W-Band Monolithic Single Sideband Transceiver for Automotive Radar ApplicationsChang, K. W. / Wang, H. / Dow, G. S. / Lo, D. C. W. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 88
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60-GHz HEMT-Based MMIC Receiver with on Chip LoSaito, T. / Hidaka, N. / Ohashi, Y. / Aoki, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 92
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A Novel W-Band Monolithic Push-Pull AmplifierWang, H. / Dow, G. S. / Aust, M. / Chang, K. W. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 92
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A novel W-band monolithic push-pull power amplifierWang, H. / Dow, G.S. / Aust, M. / Chang, K.W. / Lai, R. / Biedenbender, M. / Streit, D.C. / Allen, B.R. et al. | 1994
- 96
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A 16-DB DC-50 GHz in AlAs/InGaAs HEMT Distributed Baseband Amplifier Using a New Loss Compensation TechniqueKimura, S. / Imai, Y. / Umeda, Y. / Enoki, T. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 100
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A Monolithic Broadband 10 - 50 GHz Distributed HEMT Mixer Including Active Lo-Rf CombinerHollmann, D. / Baumann, G. / Heilig, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 105
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A 60 GHz HEMT-MMIC Analog Frequency Divider by TwoSarkissian, J. C. / Quere, R. / Obregon, J. / Camiade, M. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 109
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On-Wafer HEMT Characterization to 110GHzAnholt, R. / Pence, J. / Godshalk, E. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 115
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Wafer FAB Line Yield Improvement at Triquint SemiconductorSmith, T. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 119
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Manufacturability of Dummy-Gate Self-Aligned LDD GaAs MESFETs for High Volume ProductionNakajima, S. / Ishii, G. / Saito, Y. / Kuwata, N. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 123
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Self-Aligned InGaP/InGaAs/GaAs Heterostructure MESFET Technology for Analog-Digital Hybrid Type ICsSugitani, S. / Yamane, Y. / Nittono, T. / Yamazaki, H. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 127
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Manufacturing Technology for High Performance HBT Linear Power AmplifiersYang, L. W. / Komiak, J. J. / Smith, D. P. / Kao, M. Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 133
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2.3 V operation GaAs power MESFET with 68 % power-added efficiencyLee, Jong-Lam / Mun, Jae-Kyoung / Kim, Heacheon / Lee, Jae-Jin / Park, Hyung-Moo / Park, Sin-Chong et al. | 1994
- 133
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2.3V GaAs Power MESFET with 68-Percent Power-Added-EfficiencyLee, J. / Kim, H. / Mun, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 137
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K-Band High Gain and High Reliability GaAs Power FET with Sub-Half Micron WSi/Au T-Shaped GateKohno, Y. / Kunii, T. / Oku, T. / Hattori, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 141
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Large-Scale, Computer-Aided Thermal Design of Power GaAs Integrated Devices and CircuitsBonani, F. / Ghione, G. / Pirola, M. / Naldi, C. U. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 145
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GaAs Multi-Chip Power Amplifier Module Using a Multi-Layer Tab TapeNotani, Y. / Nakajima, Y. / Ohta, Y. / Mitsui, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 151
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Applications of GaAs ICS in Video DistributionGold, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 155
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Applications for GaAs ICS in Next Generation Wireless Communications SystemsBurns, L. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 155
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Applications for GaAs and silicon ICs in next generation wireless communication systemsBurns, L.M. et al. | 1994
- 159
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GaAs Converter IC for C Band DBS ReceiversMiya, T. / Yoshida, S. / Umemoto, T. / Satoh, K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 163
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1.5V Ultra-Wide Band GaAs Monolithic Amplifier for Portable Wireless LAN and Satellite Communication ApplicationsYoun, K. / Lee, C. / Kim, M. / Yang, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 167
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Impact of the EMF Controversy on Emerging Technologies: Good or Bad?Osepchuk, J. M. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 171
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Low Voltage, High Efficiency Class E GaAs Power AmplifiersSalama, C. A. T. / Sowlati, T. / Sitch, J. / Rabjohn, G. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 171
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Low voltage, high efficiency class E GaAs power amplifiers for mobile communicationsSowlati, T. / Salama, C.A.T. / Sitch, J. / Rabjohn, G. / Smith, D. et al. | 1994
- 175
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A 1.2 W, 65% Efficient Power Amplifier IC for Commercial ApplicationsNaber, J. / Griffiths, J. / Salvey, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 179
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A High Efficiency Commercial GaAs MESFET Power Amplifier for PCM/CIA Applications at 2.45 GHZQuach, T. / Staudinger, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 185
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High-Speed AlGaAs/GaAs HBTS and Their Applications to 40-GBIT/S-Class ICSMatsuoka, Y. / Sano, E. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 189
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A 40 GHz D-Type Flip-Flop Using AlGaAs/GaAs HBT'sKuriyama, Y. / Sugiyama, T. / Hongo, S. / Akagi, J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 193
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A Novel High-Speed Latching Operation Flip-Flop (HLO-FF) Circuit and Its Applications to a 19GB/S Decision Circuit Using 0.2 UM GaAs MESFETMurata, K. / Otsuji, T. / Sano, E. / Ohhata, M. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 197
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HBT Transmitter and Data Regenerator Arrays for WDM Optical Communications ApplicationPedrotti, K. D. / Zucca, F. / Zampardi, P. J. / Nary, K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 201
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Surface Emitting Lasers and Other Building Blocks for Optoelectronic Integrated CircuitsLear, K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 201
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Technologies for highly parallel optoelectronic integrated circuitsLear, K.L. et al. | 1994
- 207
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10 GB/S Monolithic Optical Modulator Driver with High Output Voltage of 5 V Using InGaP/GaAs HBTSYamauchi, Y. / Nagata, K. / Makimura, T. / Nakajima, O. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 211
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A Decision Circuit With Phase Detectors for 10GB/S Optical Communication SystemsShikata, M. / Nishino, A. / Shigemasa, R. / Fujishiro, H. I. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 217
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Analog-to-Digital Converter Technology ComparisonWalden, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 220
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GaAs for ADCS: System Needs and Device RequirementsSauerer, J. / Oehler, F. / Rohmer, G. / Schlag, U. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 224
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Double Heterostructure InP HBT Technology for High Resolution A/D ConvertersJensen, J. F. / Cosand, A. / Stanchina, W. E. / Walden, R. H. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 228
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Implementation of GaAs E/D HEMT Analog Components for Oversampling Analog/Digital ConversionFeng, S. / Sauerer, J. / Seitzer, D. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 232
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Second Order & Modulators Using AlGaAs/GaAs HBTSNary, K. R. / Beccue, S. / Nubling, R. / Pierson, R. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 236
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An 800 MSps Track and Hold Using a 0.3 um AlGaAs-HEMT-TechnologyRohmer, G. / Sauerer, J. / Seitzer, D. / Nowotny, Y. U. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 240
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A 6-Bit, 4GSA/S ADC Fabricated in a GaAs HBT ProcessPoulton, K. / Knudsen, K. / Corcoran, J. / Wang, K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 247
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Degradation of GaAs PHEMT Under Hydrogen Contained AtmosphereHu, W. / Yu, T. / Chao, P. / Swanson, A. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 251
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Humidity Resistance of GaAs ICSRoesch, W. J. / Winters, R. A. / Rubalcava, A. L. / Ingle, B. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 255
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Three-Terminal Breakdown Effects in Power MESFETSHanson, C. / Fu, H. / Golio, M. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 259
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Hot-Electron-Induced Degradation of Metal- Semiconductor Field-Effect TransistorsTkachenko, Y. A. / Lan, Y. / Whitefield, D. S. / Wei, C. J. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 263
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Modeling and Suppression of the Surface Trap Effect on Drain Current Frequency Dispersions in GaAs MESFETSKohno, Y. / Matsubayashi, H. / Komaru, M. / Takano, H. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 267
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An Equivalent Circuit Model for Deep-Trap Induced Drain-Current Transient Behaviors in HJFETSKunihiro, K. / Ohno, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 271
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Reliability of a High Performance Monolithic IC Fabricated Using a Production GaAs/AlGaAs HBT ProcessYamada, F. M. / Oki, A. K. / Streit, D. C. / Saito, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 275
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GaAs MMIC Thermal Analysis for Epoxy-Mount Compared with AUSN-MountNishihori, K. / Ishida, K. / Kitaura, Y. / Uchitomi, N. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 285
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Thermal modeling, measurements and design considerations of GaAs microwave devicesDawson, D.E. et al. | 1994
- 285
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Thermal Modeling, Measurements and Design Considerations of GaAs Devices and MMICSDawson, D. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 291
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A Highly-Linear Highly Efficient HBT for Communications CircuitsBrozovich, R. S. / Helms, D. R. / Yang, L. W. / Chase, R. S. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 295
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Highly Linear Efficient HBT MMIC Power AmplifiersKomiak, J. J. / Yang, L. W. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 299
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DC to 40 GHz Broad-Band Amplifiers Using AlGaAs/GaAs HBT'sKuriyama, Y. / Akagi, J. / Sugiyama, T. / Hongo, S. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 303
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Sub-2.5 DB Noise Figure GaAs HBT Direct-Coupled LNAS for Highvolume Commercial Applications to 6 GHzKobayashi, K. W. / Oki, A. K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 307
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A KA-Band HBT Two-Stage LNAChu, S. L. G. / Wohlert, R. / Pucel, R. / Jackson, G. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 311
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Integrated AlGaAs/GaAs HBT High Speed Operational AmplifierYi, D. / Qingming, Z. / Keli, C. / Keqiang, Z. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 315
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A Double-Double Balanced HBT Schottky Diode Broadband Mixer at X-BandKobayashi, K. W. / Kasody, R. / Oki, A. K. / Dow, S. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 321
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Sub-.2 Micron Gate Lithography Using E-Beam, X-Ray and Optical Technologies - An OverviewStudebaker, L. G. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 325
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A 0.1 UM W-Band HEMT Production Process for High Yield and High Performance Low Noise and Power MMICSBiedenbender, M. / Lai, R. / Lee, J. / Chen, S. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 325
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A 0.1 micron W-band HEMT production process for high yield and high performance low noise and power MMICsBiedenbender, M. / Lai, R. / Lee, J. / Chen, S. / Tan, K.L. / Liu, P.H. / Freudenthal, A. / Streit, D.C. / Allen, B. / Wang, H. et al. | 1994
- 329
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Monolithic HEMT-HBT Integration for Novel Microwave Circuit ApplicationsStreit, D. C. / Umemoto, D. K. / Kobayashi, K. W. / Oki, A. K. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 333
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A 94 GHz GaAs Monolithic Switch with a Vertical Pin Diode StructurePutnam, J. / Fukuda, M. / Staecker, P. / Yun, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 337
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Device Technologies for InP-Based HEMT's and Their ApplicationsEnoki, T. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 337
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Device technologies for InP-based HEMTs and their application to ICsEnoki, T. / Kobayashi, T. / Ishii, Y. et al. | 1994
- 341
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High Resolution InP via Holes for Millimeter Wave Device ApplicationsHur, K. / Kazior, T. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 345
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Ultra-High FMAX and FT InP/InGaAs Double-Heterojunction Bipolar Transistors with Step-Graded InGaAsP CollectorsYamahata, S. / Kurishima, K. / Kobayashi, T. / Matsuoka, Y. / IEEE; Electron Devices Society / IEEE; Microwave Theory and Techniques Society et al. | 1994
- 1055
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Novel W-Band Monolithic Push-Pull Power AmplifiersWang, H. / Lai, R. / Biedenbender, M. / Dow, G. S. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1068
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Active GaAs MMIC Band-Pass Filters with Automatic Frequency Tuning and Insertion Loss ControlAparin, V. / Katzin, P. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1074
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Low Voltage, High Efficiency GaAs Class E Power Amplifiers for Wireless TransmittersSowlati, T. / Salama, C. A. T. / Sitch, J. / Rabjohn, G. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1081
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GaAs Converter IC's For C-Band DBS ReceiversYoshida, S. / Satoh, K. / Miya, T. / Umemoto, T. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1088
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Applications for GaAs and Silicon Integrated Circuits in Next Generation Wireless Communication SystemsBurns, L. M. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1101
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A Novel High-Speed Latching Operation Flip-Flop (HLO-FF) Circuit and its Application to a 19-Gb/s Decision Circuit Using a 0.2-m GaAs MESFETMurata, K. / Otsuji, T. / Sano, E. / Ohhata, M. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1109
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A 6-b, 4 GSa/s GaAs HBT ADCPoulton, K. / Knudsen, K. L. / Corcoran, J. J. / Wang, K.-C. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1119
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A 3.2-GHz Second-Order Delta-Sigma Modulator Implemented in InP HBT TechnologyJensen, J. F. / Raghavan, G. / Cosand, A. E. / Walden, R. H. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1131
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Integrated AlGaAs/GaAs HBT High Slew-Rate and Wide Band Operational AmplifierYi, D. / Qingming, Z. / Keli, C. / Keqiang, Z. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994
- 1136
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0.9-V DSP Blocks: A 15-ns 4-k SRAM and a 45-ns 16-b Multiply/AccumulatorHallmark, J. / Shurboff, C. / Ooms, B. / Lucero, R. / IEEE / Electron Devices Society| IEEE / Microwave Theory and Techniques Society et al. | 1994