Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures (Englisch)
- Neue Suche nach: Deshpande, M.R.
- Neue Suche nach: Sleight, J.W.
- Neue Suche nach: Reed, M.A.
- Neue Suche nach: Wheeler, R.G.
- Neue Suche nach: Matyi, R.J.
- Neue Suche nach: Deshpande, M.R.
- Neue Suche nach: Sleight, J.W.
- Neue Suche nach: Reed, M.A.
- Neue Suche nach: Wheeler, R.G.
- Neue Suche nach: Matyi, R.J.
In:
Superlattices and Microstructures
;
20
, 4
;
513-522
;
1996
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures
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Weitere Titelangaben:Zeemann-Aufspaltung durch einzelne Störstellen in Heterostrukturen mit resonantem Tunneleffekt
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Beteiligte:Deshpande, M.R. ( Autor:in ) / Sleight, J.W. ( Autor:in ) / Reed, M.A. ( Autor:in ) / Wheeler, R.G. ( Autor:in ) / Matyi, R.J. ( Autor:in )
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Erschienen in:Superlattices and Microstructures ; 20, 4 ; 513-522
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Verlag:
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Erscheinungsdatum:1996
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Format / Umfang:10 Seiten, 9 Bilder, 17 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Zeeman-Effekt , Spektrallinienaufspaltung , Mikroelektronik , Quantentopf , GaAs (Galliumarsenid) , Drei-Fünf-Verbindung , AlGaAs (Aluminium-Gallium-Arsenid) , Störstelle (Kristall) , Energieniveau , Tunneleffekt , Heterostruktur , Bändermodell , Störstellendichte , Donator (Fremdatom) , Fermi-Niveau , Strom-Spannungs-Kennlinie , magnetische Resonanz , Spinumklappvorgang , optisches Messverfahren
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Datenquelle:
Inhaltsverzeichnis – Band 20, Ausgabe 4
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