Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications (Englisch)
- Neue Suche nach: Rossnagel, S.M.
- Neue Suche nach: Nichols, C.
- Neue Suche nach: Hamaguchi, S.
- Neue Suche nach: Ruzic, D.
- Neue Suche nach: Turkot, R.
- Neue Suche nach: Rossnagel, S.M.
- Neue Suche nach: Nichols, C.
- Neue Suche nach: Hamaguchi, S.
- Neue Suche nach: Ruzic, D.
- Neue Suche nach: Turkot, R.
In:
Journal of Vacuum Science and Technology, Part B (Microelectronics and Nanometer Structures)
;
14
, 3
;
1819-1827
;
1996
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
-
Weitere Titelangaben:Dünnschichtabscheidung mit hohem Atomgewicht für Diffusionsbarrieren, Adhäsionsschichten und Keimschichtanwendungen
-
Beteiligte:Rossnagel, S.M. ( Autor:in ) / Nichols, C. ( Autor:in ) / Hamaguchi, S. ( Autor:in ) / Ruzic, D. ( Autor:in ) / Turkot, R. ( Autor:in )
-
Erschienen in:
-
Verlag:
-
Erscheinungsdatum:1996
-
Format / Umfang:9 Seiten, 19 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:Adhäsion , Tantal , Niederdruck , Beschichten , Diffusionsschicht , Verbindungsnetzwerk , Metallisieren , Metallschicht , dünne Schicht , Zerstäubung , Keimbildung , Magnetron , Reflexionsvermögen , Atom , Verbindung integrierter Schaltungen , Metallisieren integrierter Schaltungen , metallische Dünnschicht , Sputterabscheidung
-
Datenquelle:
Inhaltsverzeichnis – Band 14, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1600
-
Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablationZhang, J. / Szabadi, M. / Hess, P. et al. | 1996
- 1607
-
Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctionsThibado, P.M. / Mercer, T.W. / Fu, Shelton / Egami, T. / DiNardo, N.J. / Bonnell, D.A. et al. | 1996
- 1630
-
Application of time-resolved scanning electron microscopy to the analysis of the motion of micromechanical structuresOgo, I. / MacDonald, N.C. et al. | 1996
- 1642
-
Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resistAdams, D.P. / Mayer, T.M. / Swartzentruber, B.S. et al. | 1996
- 1660
-
Epitaxial growth of Si1-x-yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilaneJian Mi / Warren, P. / Gailhanou, M. / Ganiere, J.D. / Dutoit, M. / Jouneau, P.H. / Houriet, R. et al. | 1996
- 1670
-
Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal-oxide-semiconductor field-effect transistorsWatts, J.S. / Neudeck, G.W. et al. | 1996
- 1675
-
Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactorLafontaine, H. / Houghton, D.C. / Elliot, D. / Rowell, N.L. / Baribeau, J.M. / Laframboise, S. / Sproule, G.I. / Rolfe, S.J. et al. | 1996
- 1682
-
Microwave plasma nitridation of Si(100), Ge(100), and Si1-xGex surfaces: a comparative studyMukhopadhyay, M. / Ray, S.K. / Maiti, C.K. et al. | 1996
- 1687
-
In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2Wang, Y. / Hu, Y.Z. / Irene, E.A. et al. | 1996
- 1702
-
Analysis of Fourier transform infrared spectra and peak shifts in plasma-enhanced chemical vapor deposited fluorinated silica glassesSwope, R. / Woo Sik Yoo et al. | 1996
- 1706
-
Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambientsYan, J. / Gilmer, D.C. / Campbell, S.A. / Gladfelter, W.L. / Schmid, P.G. et al. | 1996
- 1712
-
Silicon dioxide passivation of InP/InGaAs metal-semiconductor-metal photodetectorsKollakowski, S. / Schade, U. / Bottcher, E.H. / Kuhl, D. / Bimberg, D. / Ambree, P. / Wandel, K. et al. | 1996
- 1719
-
Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. / Ramam, A. et al. | 1996
- 1725
-
Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactantOkada, Y. / Harris, J.S. jun. et al. | 1996
- 1729
-
Antimony doped GaAs: role of the isoelectronic dopant in defect evolutionPaskova, T. / Valcheva, E. / Yakimova, R. et al. | 1996
- 1736
-
All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 mu m InAsP/InGaP/InP multiquantum well lasers for high-temperature operationToivonen, M. / Savolainen, P. / Asonen, H. / Murison, R. et al. | 1996
- 1739
-
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxyLeo, G. / Longo, M. / Lovergine, N. / Mancini, A.M. / Vasanelli, L. / Drigo, A.V. / Romanato, F. / Peluso, T. / Tapfer, L. et al. | 1996
- 1745
-
Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structureChen, C.L. / Mahoney, L.J. / Nichols, K.B. / Manfra, M.J. / Brown, E.R. / Nitishin, P.M. / Molvar, K.M. / Gramstorff, B.F. / Murphy, R.A. et al. | 1996
- 1752
-
Comparison of masking materials for high microwave power CH4/H2Ar etching of III-V semiconductorsLee, J.W. / Crockett, R.V. / Pearton, S.J. et al. | 1996
- 1758
-
BCl3/N2 dry etching of InP, InAlP, and InGaPRen, F. / Lothian, J.R. / Kuo, J.M. / Hobson, W.S. / Lopata, J. / Caballero, J.A. / Pearton, S.J. / Cole, M.W. et al. | 1996
- 1764
-
Smooth etching of various III/V and II/VI semiconductors by Cl2 reactive ion beam etchingYoshikawa, T. / Sugimoto, Y. / Sakata, Y. / Takeuchi, T. / Yamamoto, M. / Hotta, H. / Kohmoto, S. / Asakawa, K. et al. | 1996
- 1773
-
Influence of CH4/H2 reactive ion etching on the deep levels of Si-doped AlxGa1-xAs (x=0.25)Pereira, R.G. / Van Hove, M. / Potter, M. de / Van Rossum, M. et al. | 1996
- 1780
-
Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devicesEisele, K.M. / Daleiden, J. / Ralston, J. et al. | 1996
- 1784
-
Fringe stabilization and depth monitoring during the holographic photoelectrochemical etching of n-InP (100) substratesSoltz, D. / De Paoli, M.A. / Cescato, L. et al. | 1996
- 1791
-
High rate and highly selective anisotropic etching for WSix/poly-Si using electron cyclotron resonance plasmaNojiri, K. / Tsunokuni, K. / Yamazaki, K. et al. | 1996
- 1807
-
In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance sourceThomas, S. III / Berg, E.W. / Pang, S.W. et al. | 1996
- 1812
-
Effects of surface cleaning on electrical properties for Ni contacts to p-type ZnSeIshikawa, H. / Tsukui, K. / Koide, Y. / Teraguchi, N. / Tomomura, Y. / Suzuki, A. / Murakami, M. et al. | 1996
- 1819
-
Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applicationsRossnagel, S.M. / Nichols, C. / Hamaguchi, S. / Ruzic, D. / Turkot, R. et al. | 1996
- 1828
-
Chemical vapor deposition of copper from CuI hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applicationsBraeckelmann, G. / Manger, D. / Burke, A. / Peterson, G.G. / Kaloyeros, A.E. / Reidsema, C. / Omstead, T.R. / Loan, J.F. / Sullivan, J.J. et al. | 1996
- 1837
-
Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniquesWang, Shi-Qing / Schlueter, J. et al. | 1996
- 1846
-
Step coverage comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniquesWang, Shi-Qing / Schlueter, J. / Gondran, C. / Boden, T. et al. | 1996
- 1853
-
Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid systemGorbatkin, S.M. / Poker, D.B. / Rhoades, R.L. / Doughty, C. / Berry, L.A. / Rossnagel, S.M. et al. | 1996
- 1864
-
Calculation of etching profile in the photolithographic process on As2S3 thin filmsMamedov, S. / Kisliuk, A. et al. | 1996
- 1870
-
Versatile sample handling system for scanning tunneling microscopy studies of molecular beam epitaxyWhitman, L.J. / Thibado, P.M. / Linker, F. / Patrin, J. et al. | 1996