Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix (Englisch)
- Neue Suche nach: Egorov, A.Y.
- Neue Suche nach: Zhukov, A.E.
- Neue Suche nach: Kopev, P.S.
- Neue Suche nach: Ledentsov, N.N.
- Neue Suche nach: Maksimov, M.V.
- Neue Suche nach: Ustinov, V.M.
- Neue Suche nach: Tsatsulnikov, A.F.
- Neue Suche nach: Bert, N.A.
- Neue Suche nach: Kosogov, A.O.
- Neue Suche nach: Alferov, Z.I.
- Neue Suche nach: Bimberg, D.
- Neue Suche nach: Egorov, A.Y.
- Neue Suche nach: Zhukov, A.E.
- Neue Suche nach: Kopev, P.S.
- Neue Suche nach: Ledentsov, N.N.
- Neue Suche nach: Maksimov, M.V.
- Neue Suche nach: Ustinov, V.M.
- Neue Suche nach: Tsatsulnikov, A.F.
- Neue Suche nach: Bert, N.A.
- Neue Suche nach: Kosogov, A.O.
- Neue Suche nach: Alferov, Z.I.
- Neue Suche nach: Bimberg, D.
In:
Semiconductors
;
30
, 9
;
879-883
;
1996
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
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Weitere Titelangaben:Bildung von vertikal ausgerichteten InAs-Quantendots in einer GaAs-Matrix
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Beteiligte:Egorov, A.Y. ( Autor:in ) / Zhukov, A.E. ( Autor:in ) / Kopev, P.S. ( Autor:in ) / Ledentsov, N.N. ( Autor:in ) / Maksimov, M.V. ( Autor:in ) / Ustinov, V.M. ( Autor:in ) / Tsatsulnikov, A.F. ( Autor:in ) / Bert, N.A. ( Autor:in ) / Kosogov, A.O. ( Autor:in ) / Alferov, Z.I. ( Autor:in )
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Erschienen in:Semiconductors ; 30, 9 ; 879-883
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Verlag:
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Erscheinungsdatum:1996
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Format / Umfang:5 Seiten, 9 Quellen
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ISSN:
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Coden:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 30, Ausgabe 9
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