Sb-based monolithic VCSEL operating near 2.2 mu m at room temperature (Englisch)
- Neue Suche nach: Baranov, A.N.
- Neue Suche nach: Rouillard, Y.
- Neue Suche nach: Boissier, G.
- Neue Suche nach: Grech, P.
- Neue Suche nach: Gaillard, S.
- Neue Suche nach: Alibert, C.
- Neue Suche nach: Baranov, A.N.
- Neue Suche nach: Rouillard, Y.
- Neue Suche nach: Boissier, G.
- Neue Suche nach: Grech, P.
- Neue Suche nach: Gaillard, S.
- Neue Suche nach: Alibert, C.
In:
Electronics Letters
;
34
, 3
;
281-282
;
1998
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Sb-based monolithic VCSEL operating near 2.2 mu m at room temperature
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Beteiligte:Baranov, A.N. ( Autor:in ) / Rouillard, Y. ( Autor:in ) / Boissier, G. ( Autor:in ) / Grech, P. ( Autor:in ) / Gaillard, S. ( Autor:in ) / Alibert, C. ( Autor:in )
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Erschienen in:Electronics Letters ; 34, 3 ; 281-282
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Verlag:
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Erscheinungsdatum:1998
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Format / Umfang:2 Seiten, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 34, Ausgabe 3
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