A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs (Englisch)
- Neue Suche nach: Mahapatra, S.
- Neue Suche nach: Parikh, C.D.
- Neue Suche nach: Vasi, J.
- Neue Suche nach: Ramgopal Rao, V.
- Neue Suche nach: Viswanathan, C.R.
- Neue Suche nach: Mahapatra, S.
- Neue Suche nach: Parikh, C.D.
- Neue Suche nach: Vasi, J.
- Neue Suche nach: Ramgopal Rao, V.
- Neue Suche nach: Viswanathan, C.R.
In:
Solid State Electronics
;
43
, 5
;
915-922
;
1999
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
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Beteiligte:Mahapatra, S. ( Autor:in ) / Parikh, C.D. ( Autor:in ) / Vasi, J. ( Autor:in ) / Ramgopal Rao, V. ( Autor:in ) / Viswanathan, C.R. ( Autor:in )
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Erschienen in:Solid State Electronics ; 43, 5 ; 915-922
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Verlag:
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Erscheinungsdatum:1999
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Format / Umfang:8 Seiten, 13 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 43, Ausgabe 5
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