Formation of Ni/Pt/Au ohmic contacts to p-GaN (Englisch)
- Neue Suche nach: Jang, Ja-Soon
- Neue Suche nach: Kim, Hyo-Gun
- Neue Suche nach: Park, Kyung-Hyun
- Neue Suche nach: Um, Chang-Sub
- Neue Suche nach: Han, Il-Ki
- Neue Suche nach: Kim, Sun-Ho
- Neue Suche nach: Jang, Heong-Kyu
- Neue Suche nach: Park, Seong-Ju
- Neue Suche nach: Jang, Ja-Soon
- Neue Suche nach: Kim, Hyo-Gun
- Neue Suche nach: Park, Kyung-Hyun
- Neue Suche nach: Um, Chang-Sub
- Neue Suche nach: Han, Il-Ki
- Neue Suche nach: Kim, Sun-Ho
- Neue Suche nach: Jang, Heong-Kyu
- Neue Suche nach: Park, Seong-Ju
In:
Nitride Semiconductors, 1997, MRS Fall Meeting, 1997
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1053-1058
;
1997
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Formation of Ni/Pt/Au ohmic contacts to p-GaN
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Beteiligte:Jang, Ja-Soon ( Autor:in ) / Kim, Hyo-Gun ( Autor:in ) / Park, Kyung-Hyun ( Autor:in ) / Um, Chang-Sub ( Autor:in ) / Han, Il-Ki ( Autor:in ) / Kim, Sun-Ho ( Autor:in ) / Jang, Heong-Kyu ( Autor:in ) / Park, Seong-Ju ( Autor:in )
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Erschienen in:Materials Research Society Symposium - Proceedings ; 482 ; 1053-1058
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Verlag:
- Neue Suche nach: Materials Research Society (MRS)
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Erscheinungsort:Warrendale
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Erscheinungsdatum:1997
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Format / Umfang:6 Seiten, 14 Quellen
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ISBN:
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ISSN:
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Coden:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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The Evolution of Nitride SemiconductorsAkasaki, I. / Materials Research Society et al. | 1998
- 15
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GaN Crystals: Growth and Doping Under PressureGrzegory, I. / Bockowski, M. / Lucznik, B. / Wroblewski, M. / Materials Research Society et al. | 1998
- 27
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Sublimation Sandwich Growth of Freestanding GaN CrystalsVodakov, Y. A. / Mokhov, E. N. / Ramm, M. G. / Ramm, M. S. / Materials Research Society et al. | 1998
- 33
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Deposition Sequences for Atomic Layer Growth of AlN Thin Films on Si(100) Using Dimethylethylamine Alane and AmmoniaKuo, J. S. / Rogers, J. W. / Materials Research Society et al. | 1998
- 39
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Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films Using Single-Source PrecursorsFischer, R. A. / Rogge, W. / Materials Research Society et al. | 1998
- 45
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Chemical and Structural Analysis of Nitridated SapphireCho, Y. / Rouvimov, S. / Kim, Y. / Liliental-Weber, Z. / Materials Research Society et al. | 1998
- 51
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Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) SapphireDoppalapudi, D. / Iliopoulos, E. / Basu, S. N. / Moustakas, T. D. / Materials Research Society et al. | 1998
- 57
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Substrate Surface Treatments and "Controlled Contamination" in GaN/Sapphire MOCVDGolan, Y. / Fini, P. / DenBaars, S. P. / Speck, J. S. / Materials Research Society et al. | 1998
- 63
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Surface Characterization of GaN Formation on GaAs(100) Using AmmoniaHuh, C. / Ahn, S. / Jeong Yeul Han / Keun Jae Cho / Materials Research Society et al. | 1998
- 69
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The Effect of Low-Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE ProcessZheng, L. X. / Liang, J. W. / Yang, H. / Li, J. B. / Materials Research Society et al. | 1998
- 75
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The Effect of the Nucleation Layer on the Low-Temperature Growth of GaN Using a Remote Plasma-Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)Kim, K.-K. / Kim, D.-J. / Paek, J.-S. / Jo, J.-H. / Materials Research Society et al. | 1998
- 81
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Nitridation of Sapphire Substrate Using Remote Plasma-Enhanced Ultrahigh Vacuum Chemical Vapor Deposition at Low TemperaturePaek, J.-S. / Kim, K.-K. / Lee, J.-M. / Kim, D.-J. / Materials Research Society et al. | 1998
- 87
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A TEM Study of the Microstructural Evolution of MBE-Grown GaNTricker, D. M. / Brown, P. D. / Martin, G. / Lu, J. / Materials Research Society et al. | 1998
- 93
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Investigation of Nucleation and Initial Stage of GaN Growth by Atomic Force Microscopy and X-ray DiffractionYip, P. W. / Wang, S.-Q. / Drehman, A. J. / Zhu, L. D. / Materials Research Society et al. | 1998
- 99
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In Situ Observation of AlN Formation During Nitridation of Sapphire by Ultrahigh Vacuum Transmission Electron MicroscopyYeadon, M. / Marshall, M. T. / Hamdani, F. / Pekin, S. / Materials Research Society et al. | 1998
- 107
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High Indium Content InGaN Films and Quantum WellsVan der Stricht, W. / Jacobs, K. / Moerman, I. / Demeester, P. / Materials Research Society et al. | 1998
- 113
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Epitaxial Growth and Properties of Mg-Doped GaN Film Produced by Atmospheric MOCVD System With Three-Layered Laminar Flow Gas InjectionAkutsu, N. / Tokunaga, H. / Waki, I. / Yamaguchi, A. / Materials Research Society et al. | 1998
- 119
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Wide GaN Stripes by Lateral Growth in Metalorganic Vapor-Phase EpitaxyKimura, A. / Sasaoka, C. / Sakai, A. / Usui, A. / Materials Research Society et al. | 1998
- 125
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Detection and Analysis of Phase Separation in Metalorganic-Chemical-Vapor-Deposition InGaNPiner, E. L. / El-Masry, N. A. / Liu, S. X. / Bedair, S. M. / Materials Research Society et al. | 1998
- 131
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Microstructural Evaluation of ZnO Thin Films Deposited by MOCVDGorla, C. R. / Liang, S. / Emanetoglu, N. / Mayo, W. E. / Materials Research Society et al. | 1998
- 137
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Growth Mechanism and Structure of AlN Films Grown on Sapphire by MOCVDLi, Y.-X. / Salamanca-Riba, L. / Wongchotigul, K. / Zhou, P. / Materials Research Society et al. | 1998
- 143
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The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on SapphireNg, T. B. / Han, J. / Biefeld, R. M. / Zolper, J. C. / Materials Research Society et al. | 1998
- 149
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Diluent Gas Effects on Properties of AlN and GaN Thin Films Grown by Metalorganic Vapor-Phase Epitaxy on (6H)-SiC SubstratesHanser, A. / Wolden, C. / Perry, W. / Zheleva, T. / Materials Research Society et al. | 1998
- 155
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Multiwafer MOVPE of III-Nitride Films for LED and Laser ApplicationsBeccard, R. / Schoen, O. / Schineller, B. / Schmitz, D. / Materials Research Society et al. | 1998
- 161
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Low-Temperature GaN Growth of Nitridated Sapphire Using Remote Plasma-Enhanced Ultrahigh Vacuum Chemical Vapor DepositionKim, D.-J. / Kim, K.-K. / Paek, J.-S. / Yi, M.-S. / Materials Research Society et al. | 1998
- 167
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A Kinetic Model for GaN GrowthKoleske, D. D. / Wickenden, A. E. / Henry, R. L. / DeSisto, W. J. / Materials Research Society et al. | 1998
- 173
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MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaPBiwa, G. / Yaguchi, H. / Onabe, K. / Shiraki, Y. / Materials Research Society et al. | 1998
- 179
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Vacuum Pressure MOCVD Growth and Characterization of AlN Films on MgO(100), Sapphire, and SiSerra, A. D. / Magtoto, N. P. / Ingram, D. C. / Richardson, H. H. / Materials Research Society et al. | 1998
- 185
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The Effect of Growth Temperature on the Microstructure of MOVPE AlN/Si(111)Zhou, M. / Perkins, N. R. / Rehder, E. / Kuech, T. F. / Materials Research Society et al. | 1998
- 193
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Phase Separation and Atomic Ordering in AlGaInN AlloysMoustakas, T. D. / Singh, R. / Korakakis, D. / Doppalapudi, D. / Materials Research Society et al. | 1998
- 205
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Controlling 2D/3D Growth of GaN by Molecular-Beam Epitaxy: From Superlattices to Quantum DotsDaudin, B. / Feuillet, G. / Widmann, F. / Samson, Y. / Materials Research Society et al. | 1998
- 211
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Si- and Mg-Doped GaN Layers Grown by Gas Source Molecular-Beam Epitaxy Using AmmoniaGrandjean, N. / Massies, M. / Leroux, M. / Materials Research Society et al. | 1998
- 217
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Stress-Controlled MBE Growth of GaN:Mg and GaN:SiKim, Y. / Klockenbrink, R. / Kisielowski, C. / Krueger, J. / Materials Research Society et al. | 1998
- 223
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Drastic Change in the GaN Film Quality by In Situ Controlling Surface Reconstructions in GSMBEShen, X. Q. / Tanaka, S. / Iwai, S. / Aoyagi, Y. / Materials Research Society et al. | 1998
- 227
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Effect of Atomic-Hydrogen Treatment of (001)GaAs Substrate at "High Temperatures" on rf Plasma-Assisted Molecular-Beam Epitaxy of Cubic GaNYoshikawa, A. / Nagano, H. / Qin, Z. X. / Sugure, Y. / Materials Research Society et al. | 1998
- 233
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Bulk GaN Crystal With Low Defect Density Grown by Hydride Vapor-Phase EpitaxyUsui, A. / Materials Research Society et al. | 1998
- 245
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AlN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC SubstratesMelnik, Y. V. / Nikolaev, A. E. / Stepanov, S. I. / Zubrilov, A. S. / Materials Research Society et al. | 1998
- 251
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GaN p-n Structures Grown by Hydride Vapor-Phase EpitaxyNikolaev, A. E. / Melnik, Y. V. / Kuznetsov, N. I. / Strelchuk, A. M. / Materials Research Society et al. | 1998
- 257
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Selective-Area Growth of GaN by MOVPE and HVPEHiramatsu, K. / Matsushima, H. / Shibata, T. / Sawaki, N. / Materials Research Society et al. | 1998
- 269
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Properties of Freestanding GaN Bulk Crystals Grown by HVPEMelnik, Y. / Nikolaev, A. / Nikitina, I. / Vassilevski, K. / Materials Research Society et al. | 1998
- 277
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MOCVD Growth of GaN on Bulk AlN SubstratesLu, H. / Bhat, I. / Lee, B.-C. / Slack, G. / Materials Research Society et al. | 1998
- 283
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Growth of GaN on Lithium Gallate Substrates for Development of a GaN Thin Compliant SubstrateDoolittle, W. A. / Kropewnicki, T. / Carter-Coman, C. / Stock, S. / Materials Research Society et al. | 1998
- 289
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Ultrasmooth ZnO Buffer Layers on (001) SapphireDrehman, A. J. / Wang, S.-Q. / Yip, P. W. / Materials Research Society et al. | 1998
- 295
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MBE Growth of GaN on NdGaO~3(101)Fechtmann, C. / Kirchner, V. / Einfeldt, S. / Heinke, H. / Materials Research Society et al. | 1998
- 301
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Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN LayersNam, O. H. / Zheleva, T. S. / Bremser, M. D. / Thomson, D. B. / Materials Research Society et al. | 1998
- 307
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Photoluminescence Characteristics of GaN Layers Grown on SOI Substrates and Relation to Material PropertiesPhilippe, A. / Bru-Chevallier, C. / Guillot, G. / Cao, J. / Materials Research Society et al. | 1998
- 313
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Single-Crystal Gallium Nitride on Silicon Using SiC as an Intermediate LayerUstin, S. A. / Ho, W. / Materials Research Society et al. | 1998
- 319
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Energy Dependent Growth Rates of AlN Using Pulsed Supersonic JetsBallarotto, V. W. / Kordesch, M. E. / Materials Research Society et al. | 1998
- 325
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Design and Characterization of a UHV Arcjet Nitrogen SourceBicknell-Tassius, R. N. / Deelman, P. W. / Grunthaner, P. J. / Grunthaner, F. J. / Materials Research Society et al. | 1998
- 331
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Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular BeamsChen, E. / Zhang, S. / Michel, A. / Davis, R. F. / Materials Research Society et al. | 1998
- 337
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Structure and Properties of III-N Semiconductor Thin Films Grown at Low Temperatures by N-Radical-Assisted Pulsed Laser DepositionFernandez, F. E. / Pumarol, M. / Martinez, A. / Pantojas, V. / Materials Research Society et al. | 1998
- 343
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Pulsed Laser Deposition of Highly Crystalline GaN Films on SapphireVispute, R. D. / Talyansky, V. / Choopun, S. / Enck, R. / Materials Research Society et al. | 1998
- 351
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Structural and Optical Properties of Group-III Nitride Quantum Wells Studied by (S)TEM and CLLakner, H. / Liu, Q. / Brockt, G. / Radefeld, A. / Materials Research Society et al. | 1998
- 363
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Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiCSmith, A. R. / Ramachandran, V. / Feenstra, R. M. / Greve, D. W. / Materials Research Society et al. | 1998
- 369
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Atomic Scale Aluminum and Strain Distribution in a GaN/Al~xGa~1~-~xN HeterostructureKisielowski, C. / Schmidt, O. / Yang, J. / Materials Research Society et al. | 1998
- 375
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Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum WellsLiliental-Weber, Z. / Ruvimov, S. / Swider, W. / Kim, Y. / Materials Research Society et al. | 1998
- 381
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The Effect of Si and Mg Doping in the Microstructure of Epitaxially Grown GaNKatsikini, M. / Paloura, E. C. / Fieber-Erdmann, M. / Holub-Krappe, E. / Materials Research Society et al. | 1998
- 387
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Atomic Structure of Grain Boundaries and Interfaces in III-Nitrides Epitaxial SystemsRuvimov, S. / Liliental-Weber, Z. / Washburn, J. / Amano, H. / Materials Research Society et al. | 1998
- 393
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Lateral Epitaxy Formation Mechanism and Microstructure of Selectively Grown GaN StructuresZheleva, T. / Nam, O.-H. / Griffin, J. D. / Bremser, M. D. / Materials Research Society et al. | 1998
- 399
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A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaNBrown, P. D. / Tricker, D. M. / Xin, Y. / Cheng, T. S. / Materials Research Society et al. | 1998
- 405
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Crystal Defects in GaN on (0001) SapphireJohnson, M. T. / Mao, Z. / Barry Carter, C. / Materials Research Society et al. | 1998
- 411
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Comparative Study of Typical Defects in III-Nitride Thin Films and Their AlloysDovidenko, K. / Oktyabrsky, S. / Narayan, J. / Joshkin, V. / Materials Research Society et al. | 1998
- 417
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Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPEDunn, K. A. / Babcock, S. E. / Vauda, R. / Phanse, V. / Materials Research Society et al. | 1998
- 423
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Transmission-Electron-Microscopy Study of Room-Temperature Lasing Epitaxial ZnO Films on SapphireWang, N. / Fung, K. K. / Yu, P. / Tang, Z. K. / Materials Research Society et al. | 1998
- 429
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Amorphous Domains in GaN Layers Grown on 6H-SiC by MBEVermaut, P. / Potin, V. / Ruterana, P. / Hairie, A. / Materials Research Society et al. | 1998
- 435
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Low-Angle and High-Angle Grain Boundaries in AlN/GaN Layers Grown on (0001) Sapphire by MBEPotin, V. / Ruterana, P. / Hairie, A. / Nouet, G. / Materials Research Society et al. | 1998
- 441
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In Situ RHEED-TRAXS Monitoring Alloy Composition of the Surface During RF-MBE Growth of GAInN and AlGaNIto, A. / Sakai, H. / Inagaki, M. / Nomura, G. / Materials Research Society et al. | 1998
- 447
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Comparative Analysis of Strain and Stress in MBE- and MOCVD-Grown GaN Thin Films on SapphireKrueger, J. / Sudhir, G. S. / Corlatan, D. / Cho, Y. / Materials Research Society et al. | 1998
- 453
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Microstructure of InGaN Quantum WellsPonce, F. A. / Cherns, D. / Goetz, W. / Kern, R. S. / Materials Research Society et al. | 1998
- 459
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The Core Structure of Pure Edge Threading Dislocations in GaN Layers Grown on [0001]SiC or Sapphire by MBERuterana, P. / Potin, V. / Nouet, G. / Materials Research Society et al. | 1998
- 465
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High-Resolution X-ray-Diffraction Analysis of "Device-Quality" Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment at "High Temperatures"Yoshikawa, A. / Qin, Z. X. / Nagano, H. / Sugure, Y. / Materials Research Society et al. | 1998
- 471
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TEM Study of Interfaces and Defects in MOCVD-Grown GaN on SiC on SIMOXZhou, W. L. / Pirouz, P. / Namavar, F. / Colter, P. C. / Materials Research Society et al. | 1998
- 479
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Structural Properties of Nitrides Grown by OMVPE on Sapphire SubstrateAmano, H. / Takeuchi, T. / Yamaguchi, S. / Nitta, S. / Materials Research Society et al. | 1998
- 489
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Localized Donors in GaN: Spectroscopy Using Large PressuresWetzel, C. / Amano, H. / Akasaki, I. / Suski, T. / Materials Research Society et al. | 1998
- 501
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Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaNKorona, K. P. / Wysmolek, A. / Baranowski, J. M. / Pakula, K. / Materials Research Society et al. | 1998
- 507
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Electron Mobility of n-Type GaN FilmsNg, H. M. / Doppalapudi, D. / Singh, R. / Moustakas, T. D. / Materials Research Society et al. | 1998
- 513
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Effects of Piezoelectric Fields in GaInN/GaN and GaN/AlGaN Heterostructures and Quantum WellsJin Seo Im / Kollmer, H. / Off, J. / Sohmer, A. / Materials Research Society et al. | 1998
- 519
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Photocurrent Response in Mg-Doped GaNQiu, C. H. / Pankove, J. I. / Akasaki, I. / Amano, H. / Materials Research Society et al. | 1998
- 525
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Effect of Mg, Zn, Si, and O on the Lattice Constant of Gallium Nitride Thin FilmsSudhir, G. S. / Peyrot, Y. / Krueger, J. / Kim, Y. / Materials Research Society et al. | 1998
- 531
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Photoquenching of Persistent Photoconductivity in n-Type GaNHirsch, M. T. / Seifert, O. / Kirfel, O. / Parisi, J. / Materials Research Society et al. | 1998
- 537
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Magnetoluminescence and Resonant Electronic Raman Scattering Investigation of Donors and Excitons in Hydride VPE and MOCVD GaNSkromme, B. J. / Jayapalan, J. / Wang, D. / Sankey, O. F. / Materials Research Society et al. | 1998
- 543
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Raman Analysis of Al~xGa~1~-~xN FilmsBergman, L. / Dutta, M. / Bremser, M. D. / Nam, O.-H. / Materials Research Society et al. | 1998
- 549
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Characterization of Bulk, Polycrystalline Indium Nitride Grown at Subatmospheric PressuresDyck, J. S. / Kash, K. / Kim, K. / Lambrecht, W. R. L. / Materials Research Society et al. | 1998
- 555
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Fine Structure and Magneto-optics of Excitonic Levels in Wurtzite GaNEckey, L. / Hoffmann, A. / Thurian, P. / Broser, I. / Materials Research Society et al. | 1998
- 561
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Location of Residual Donors in GaN Epitaxial LayersGlaser, E. R. / Kennedy, T. A. / Wickenden, A. E. / Koleske, D. D. / Materials Research Society et al. | 1998
- 567
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Characterization of Si-Doped GaN on (00.1) Sapphire Grown by MOCVDChang Soo Kim / Lee, D.-K. / Lee, C.-R. / Sam Kyu Noh / Materials Research Society et al. | 1998
- 573
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Nondestructive, Room-Temperature Determination of the Nature of the Band-Bending (Carrier Type) in Group-III Nitrides Using Contactless Electroreflectance and Surface Photovoltage SpectroscopyKrystek, W. / Pollak, F. H. / Feng, Z. C. / Schurman, M. / Materials Research Society et al. | 1998
- 579
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The Doping and Characterization of Erbium-Implanted GaNTorvik, J. T. / Feuerstein, R. J. / Qiu, C. H. / Pankove, J. I. / Materials Research Society et al. | 1998
- 585
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Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN HeterostructuresBuyanov, A. V. / Sandberg, J. / Bergman, J. P. / Sernelius, B. E. / Materials Research Society et al. | 1998
- 593
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GaN Room-Temperature Exciton Spectra by Photovoltaic MeasurementLiu, W. / Li, M. F. / Chua, S. J. / Zhang, Y. H. / Materials Research Society et al. | 1998
- 599
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Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum WellsForbang, T. F. / McIntyre, C. R. / Materials Research Society et al. | 1998
- 607
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Time-Resolved Photoluminescence of GaN/Ga~0~.~9~3 Al~0~.~0~7 N Quantum WellsLefebvre, P. / Allegre, J. / Gil, B. / Kavokine, A. / Materials Research Society et al. | 1998
- 613
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Localized Excitons in InGaNChichibu, S. / Deguchi, T. / Sota, T. / Wada, K. / Materials Research Society et al. | 1998
- 625
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Cathodoluminescence Studies of InGaN Quantum WellsPonce, F. A. / Galloway, S. A. / Goetz, W. / Kern, R. S. / Materials Research Society et al. | 1998
- 631
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Optical Properties of InGaN/GaN Multiquantum-Well StructuresBergman, J. P. / Saksulv, N. / Dalfors, J. / Holtz, P. O. / Materials Research Society et al. | 1998
- 637
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Radiative and Nonradiative Relaxation of Excitons in GaNGoeldner, A. / Eckey, L. / Hoffmann, A. / Broser, I. / Materials Research Society et al. | 1998
- 643
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Well Thickness and Doping Effects, and Room-Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple-Quantum-WellsZeng, K. C. / Smith, M. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 1998
- 649
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Photoluminescence Properties of GaN/AlGaN Multiple-Quantum-Well MicrodisksMair, R. A. / Zeng, K. C. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 1998
- 655
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Near Bandgap Photoluminescence Broadening in n-GaN FilmsIliopoulos, E. / Doppalapudi, D. / Ng, H. M. / Moustakas, T. D. / Materials Research Society et al. | 1998
- 661
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Depth-Resolved and Excitation Power Dependent Cathodoluminescence of MBE-Grown Cubic GaN EpilayersAs, D. J. / Wang, C. / Schoettker, B. / Schikora, D. / Materials Research Society et al. | 1998
- 667
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Photoluminescence Quenching Spectroscopy of Trap-Mediated Er^3^+ Excitation Mechanisms in Er-Implanted GaNRhee, S. J. / Kim, S. / Li, X. / Coleman, J. J. / Materials Research Society et al. | 1998
- 673
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Photoluminescence Characterization of p-Type GaN:MgCorlatan, D. / Krueger, J. / Kisielowski, C. / Klockenbrink, R. / Materials Research Society et al. | 1998
- 679
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Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects as the Origin of the Yellow LuminescenceGoepfert, I. D. / Schubert, E. F. / Redwing, J. M. / Materials Research Society et al. | 1998
- 685
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High-Temperature Photoluminescence and Photoluminescence Excitation Spectroscopy of Er-Doped Gallium NitrideHoemmerich, U. / Thaik, M. / Robinson-Brown, T. / MacKenzie, J. D. / Materials Research Society et al. | 1998
- 691
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Photoluminescence Excitation Study of LO-Phonon-Assisted Excitonic Transitions in GaNHwang, S. J. / Cho, Y. H. / Song, J. J. / Shan, W. / Materials Research Society et al. | 1998
- 697
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Cubic InN Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaNPerlin, P. / Weinstein, B. A. / Christensen, N. E. / Gorczyca, I. / Materials Research Society et al. | 1998
- 703
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Cross-Sectional Cathodoluminescence of GaN Epitaxial FilmsHerrera Zaldivar, M. / Fernandez, P. / Piqueras, J. / Materials Research Society et al. | 1998
- 709
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Carbon and Hydrogen-Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor-Phase EpitaxyZhang, R. / Kuech, T. F. / Materials Research Society et al. | 1998
- 715
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Probing the Indium Mole Fraction in an InGaN Epilayer by Depth-Resolved CathodoluminescenceTrager-Cowan, C. / Middleton, P. G. / Mohammed, A. / O'Donnell, K. P. / Materials Research Society et al. | 1998
- 719
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Temperature Dependence of the Fundamental Bandgap in Hexagonal GaNHerr, H. / Alex, V. / Weber, J. / Materials Research Society et al. | 1998
- 725
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Luminescence of a New Material: GaN Grown on NdGaO~3Korona, K. P. / Pakula, K. / Wysmolek, A. / Baranowski, J. M. / Materials Research Society et al. | 1998
- 731
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Isoelectronic Traplike Luminescence Centers of InGaNKanie, H. / Koami, H. / Kawano, T. / Totsuka, T. / Materials Research Society et al. | 1998
- 737
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InGaN Quantum Dots Fabricated on AlGaN Surfaces - Growth Mechanism and Optical PropertiesHirayama, H. / Tanaka, S. / Ramvall, P. / Aoyagi, Y. / Materials Research Society et al. | 1998
- 745
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Elemental Analysis on Group-III Nitrides Using Heavy Ion ERDDollinger, G. / Karsch, S. / Ambacher, O. / Angerer, H. / Materials Research Society et al. | 1998
- 757
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Observation of Native Ga Vacancies in GaN by Positron AnnihilationSaarinen, K. / Laine, T. / Kuisma, S. / Nissilae, J. / Materials Research Society et al. | 1998
- 763
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Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss SpectroscopyNatusch, M. K. H. / Botton, G. A. / Broom, R. F. / Brown, P. D. / Materials Research Society et al. | 1998
- 769
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Stress Gradients in Heteroepitaxial Gallium Nitride FilmsAger, J. W. / Conti, G. / Romano, L. T. / Kisielowski, C. / Materials Research Society et al. | 1998
- 775
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Compositionally Dependent Band Offsets in AlN/Al~x Ga~1~-~x N Heterojunctions Measured by Using X-ray Photoelectron SpectroscopyBeach, R. A. / Piquette, E. C. / Grant, R. W. / McGill, T. C. / Materials Research Society et al. | 1998
- 781
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Direct Observation of Atomic Structures of Defects in GaN by High-Resolution Z-Contrast STEMXin, Y. / Pennycook, S. J. / Browning, N. D. / Nellist, P. D. / Materials Research Society et al. | 1998
- 787
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Photoemission Study of the Electronic Structure of Wurtzite GAN(0001) SurfacesSmith, K. E. / Dhesi, S. S. / Stagarescu, C. B. / Downes, J. / Materials Research Society et al. | 1998
- 795
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Theoretical Investigation of Extended Defects in Group-III NitridesWright, A. F. / Materials Research Society et al. | 1998
- 805
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Excitonic Enhanced Optical Gain of GaN/AlGaN Quantum Wells With Localized StatesUenoyama, T. / Materials Research Society et al. | 1998
- 815
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Monte Carlo Calculation of High- and Low-Field Al~xGa~1~-~x N Electron Transport CharacteristicsAlbrecht, J. D. / Wang, R. / Ruden, P. P. / Farahmand, M. / Materials Research Society et al. | 1998
- 821
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Velocity Overshoot and Ballistic Electron Transport in Wurtzite Indium NitrideFoutz, B. E. / O'Leary, S. K. / Shur, M. S. / Eastman, L. F. / Materials Research Society et al. | 1998
- 827
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An Investigation of the Electron Escape Time Within a Biased AlGaN/GaN Quantum WellLefebvre, K. R. / Anwar, A. F. M. / Materials Research Society et al. | 1998
- 833
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Structural and Electronic Properties of GaN/Al InterfacesPicozzi, S. / Continenza, A. / Massidda, S. / Freeman, A. J. / Materials Research Society et al. | 1998
- 839
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Acceptor Binding Energies in GaN and AlNMireles, F. / Ulloa, S. E. / Materials Research Society et al. | 1998
- 845
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The Velocity-Field Characteristic of Indium NitrideO'Leary, S. K. / Foutz, B. E. / Shur, M. S. / Eastman, L. F. / Materials Research Society et al. | 1998
- 851
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Interband Radiative Recombination Calculations in Ternary Nitride Solid SolutionsDmitriev, A. V. / Oruzheinikov, A. L. / Materials Research Society et al. | 1998
- 857
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Ab Initio Calculations of Second Order Optical Response Functions in Wurtzite GaN and AlN, and Their Short Period SuperlatticesRashkeev, S. N. / Lambrecht, W. R. L. / Segall, B. / Materials Research Society et al. | 1998
- 863
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Thermal Expansion of GaN and AlNWang, K. / Reeber, R. R. / Materials Research Society et al. | 1998
- 869
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Constant Pressure First-Principles Molecular-Dynamics Study on BN, AlN, and GaNShimada, K. / Sota, T. / Suzuki, K. / Materials Research Society et al. | 1998
- 875
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Dislocations in GaN/Sapphire: Their Distribution and Effect on Stress and Optical PropertiesJain, S. C. / Pinardi, K. / Maes, H. E. / Van Overstraeten, R. / Materials Research Society et al. | 1998
- 881
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Electron Irradiation-Induced Trap in n-Type GaNFang, Z.-Q. / Hemsky, J. W. / Look, D. C. / Mack, M. P. / Materials Research Society et al. | 1998
- 887
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Deep Trap Characterization in GaN Using Thermal and Optical Admittance SpectroscopyKrtschil, A. / Witte, H. / Lisker, M. / Christen, J. / Materials Research Society et al. | 1998
- 893
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Uniaxial Stress Effects on Valence-Band Structures of GaNYamaguchi, A. A. / Mochizuki, Y. / Sasaoka, C. / Kimura, A. / Materials Research Society et al. | 1998
- 899
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Theory of Interfaces and Surfaces of Wide-Gap NitridesRapcewicz, K. / Buongiorno Nardelli, M. / Bungaro, C. / Briggs, E. L. / Materials Research Society et al. | 1998
- 905
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Theoretical Study of Native Point Defects in AlN and InNStampfl, C. / Van de Walle, C. G. / Materials Research Society et al. | 1998
- 911
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Band Offsets in GaN/AlN and AlN/SiC HeterojunctionsBinggeli, N. / Ferrara, P. / Baldereschi, A. / Materials Research Society et al. | 1998
- 917
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Effects of Substrate Orientation on the Valence-Band Splittings and Valence-Band Offsets in GaN and AlN FilmsMajewski, J. A. / Staedele, M. / Materials Research Society et al. | 1998
- 923
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Valence-Band Parameters for Wurtzite GaN and InNYea, Y. C. / Chang, T. C. / Li, M. F. / Materials Research Society et al. | 1998
- 929
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New Method of Computing Band Offsets and Its Application to AlGaN/GaN HeterostructuresWebster, R. T. / Anwar, A. F. M. / Materials Research Society et al. | 1998
- 935
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Theory of Ga, N, and H Terminated GAN(0001)/(0001) SurfacesEisner, J. / Haugk, M. / Gutierrez, R. / Frauenheim, T. / Materials Research Society et al. | 1998
- 935
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Theory of Ga, N and H terminated GaN (0001)/(0001 over bar) surfacesElsner, J. / Haugk, M. / Gutierrez, R. / Frauenheim, T. et al. | 1997
- 941
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Simulation of Vacancy Pairs in GaN Using Tight-Binding Molecular DynamicsBoucher, D. E. / Gal, Z. A. / DeLeo, G. G. / Fowler, W. B. / Materials Research Society et al. | 1998
- 949
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Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure AnnealingSuski, T. / Jun, J. / Leszczynski, M. / Teisseyre, H. / Materials Research Society et al. | 1998
- 961
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GaN Device ProcessingPearton, S. J. / Ren, F. / Zolper, J. C. / Shul, R. J. / Materials Research Society et al. | 1998
- 973
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Laser Processing for Patterned and Freestanding Nitride FilmsKelly, M. K. / Ambacher, O. / Dimitrov, R. / Angerer, H. / Materials Research Society et al. | 1998
- 979
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Recent Progress in Implantation and Annealing of GaN and AlGaNZolper, J. C. / Han, J. / Van Deusen, S. B. / Crawford, M. H. / Materials Research Society et al. | 1998
- 985
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Phase Separation in InGaN/GaN Multiple-Quantum-WellsMcCluskey, M. C. / Romano, L. T. / Krusor, B. S. / Bour, D. P. / Materials Research Society et al. | 1998
- 991
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Selective-Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen AmbientHiramatsu, K. / Matsushima, H. / Hanai, H. / Sawaki, N. / Materials Research Society et al. | 1998
- 997
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Photoluminescence of Wet- and Dry-Etched Gallium NitrideReuter, E. E. / Youtsey, C. / Adesida, I. / Bishop, S. G. / Materials Research Society et al. | 1998
- 1003
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Current Controlled Photoelectrochemical Etching of GaN Leaving Smooth SurfacesRotter, T. / Uffmann, D. / Ackermann, J. / Aderhold, J. / Materials Research Society et al. | 1998
- 1009
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Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical EtchingStocker, D. / Schubert, E. F. / Grieshaber, W. / Redwing, J. M. / Materials Research Society et al. | 1998
- 1015
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Pulsed Laser Etching of GaN and AlN FilmsChen, H. / Vispute, R. D. / Talyansky, V. / Enck, R. / Materials Research Society et al. | 1998
- 1021
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Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaNDalmer, M. / Restle, M. / Stoetzler, A. / Vetter, U. / Materials Research Society et al. | 1998
- 1027
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Characterizations of Mg-Implanted GaNChi, G.-C. / Pong, B. J. / Pan, C. J. / Teng, Y. C. / Materials Research Society et al. | 1998
- 1033
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Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaNJadwisienczak, W. M. / Lozykowski, H. J. / Materials Research Society et al. | 1998
- 1041
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Aging of InGaN/AlGaN/GaN Light-Emitting DiodesYunovich, A. E. / Kovalev, A. N. / Kudryashov, V. E. / Manyakhin, F. I. / Materials Research Society et al. | 1998
- 1047
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InGaN Double Heterostructures and DH-LEDs on HVPE GaN-on-Sapphire SubstratesBoutros, K. S. / Flynn, J. S. / Phanse, V. / Vaudo, R. P. / Materials Research Society et al. | 1998
- 1053
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Formation of Ni/Pt/Au Ohmic Contacts to p-GaNJang, J.-S. / Kim, H.-G. / Park, K.-H. / Um, C.-S. / Materials Research Society et al. | 1998
- 1059
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Materials Characterization on Optically Pumped InGaN/GaN Lasers by Far-Field Measurements and Fourier Analysis of the Emission SpectrumHofstetter, D. / Thornton, R. L. / Romano, L. T. / Bour, D. P. / Materials Research Society et al. | 1998
- 1065
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High-Temperature GaN and AlGaN Photovoltaic Detectors for uv Sensing ApplicationsVan Hove, J. M. / Chow, P. P. / Hickman, R. / Klaassen, J. J. / Materials Research Society et al. | 1998
- 1071
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DC and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field-Effect Transistors on SiC SubstratesChen, Q. / Yang, J. W. / Khan, M. A. / Ping, A. T. / Materials Research Society et al. | 1998
- 1077
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Ni/Si-Based Ohmic Contacts to p- and n-Type GaNKaminska, E. / Piotrowska, A. / Barcz, A. / Guziewicz, M. / Materials Research Society et al. | 1998
- 1083
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Ohmic Contact to GaN Grown by MOCVDKim, D.-W. / Hong Koo Baik / Cha Yeon Kim / Sung Woo Kim / Materials Research Society et al. | 1998
- 1089
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Experimental Study of Sputter-Deposited Contacts to Gallium NitridePiquette, E. C. / Bandic, Z. Z. / McGill, T. C. / Materials Research Society et al. | 1998
- 1095
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Metal Contacts to n-Al~xGa~1~-~xNSampath, A. / Ng, H. M. / Korakakis, D. / Moustakas, T. D. / Materials Research Society et al. | 1998
- 1101
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Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVDEgawa, T. / Ishikawa, H. / Yamamoto, K. / Jimbo, T. / Materials Research Society et al. | 1998
- 1107
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Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect DevicesTherrien, R. J. / Nam, O. H. / Bremser, M. D. / Lithicum, K. / Materials Research Society et al. | 1998
- 1113
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Electrical and Optical Characterization of Homojunction Gallium Nitride Light-Emitting DiodesLaws, G. M. / Morgan, J. / Ren, G. B. / Harrison, I. / Materials Research Society et al. | 1998
- 1119
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Analysis of Optical Gain of Strained Wurtzite In~xGa~1~-~x N/GaN Quantum-Well LasersChong, T. C. / Yeo, Y. C. / Li, M. F. / Fan, W. J. / Materials Research Society et al. | 1998
- 1125
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Optical Gain in BGaN Lattice-Matched to (0001)6H-SiCHonda, T. / Tsubamoto, M. / Kuga, Y. / Kawanishi, H. / Materials Research Society et al. | 1998
- 1131
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Breakdown Behavior of AlGaN MSM uv PhotodetectorsLiang, S. / Liu, Y. / Lu, Y. / Schurman, M. / Materials Research Society et al. | 1998
- 1137
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Gallium Nitride Multioperate Optoelectronic DevicesSidorov, V. G. / Drizhuk, A. G. / Sidorov, D. V. / Materials Research Society et al. | 1998
- 1145
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InGaN/GaN/AlGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 HoursNakamura, S. / Materials Research Society et al. | 1998
- 1157
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Nitride Laser Diodes With InGaN-Based MQW StructuresSugiura, L. / Nishi, J. / Onomura, M. / Nunoue, S.-Y. / Materials Research Society et al. | 1998
- 1169
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Status of Nitride-Based Light-Emitting and Laser Diodes on SiCDoverspike, K. / Bulman, G. E. / Sheppard, S. T. / Kong, H. S. / Materials Research Society et al. | 1998
- 1179
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First nitride laser diode on silicon carbideBrown, J.D. / Swindell, J.T. / Johnson, M.A.L. / Yu, Zhonghai / Schetzina, J.F. / Bulman, G.E. / Doverspike, K. / Sheppard, S.T. / Weeks, T.W. / Leonard, M. et al. | 1997
- 1179
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The First Nitride Laser Diode on Silicon CarbideBrown, J. D. / Swindell, J. T. / Johnson, M. A. L. / Yu, Z. / Materials Research Society et al. | 1998
- 1185
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InGaN laser diodes grown on SiC substrate using low-pressure metal-organic vapor phase epitaxyKuramata, A. / Doreen, K. / Soejima, R. / Horino, K. / Kubota, S. / Tanahashi, T. et al. | 1997
- 1185
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InGaN Laser Diodes Grown on SiC Substrates Using Low-Pressure Metalorganic Vapor-Phase EpitaxyKuramata, A. / Domen, K. / Soejima, R. / Horino, K. / Materials Research Society et al. | 1998
- 1197
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Pulsed Operation of Cleaved-Facet InGaN Laser DiodesSink, R. K. / Abare, A. C. / Kozodoy, P. / Mack, M. P. / Materials Research Society et al. | 1998
- 1203
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Application of Blue Diode Lasers to PrintingBringans, R. D. / Materials Research Society et al. | 1998