ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform (Englisch)
- Neue Suche nach: Ikku, Y.
- Neue Suche nach: Yokoyama, M.
- Neue Suche nach: Iida, R.
- Neue Suche nach: Sugiyama, M.
- Neue Suche nach: Nakano, Y.
- Neue Suche nach: Takenaka, M.
- Neue Suche nach: Takagi, S.
- Neue Suche nach: Ikku, Y.
- Neue Suche nach: Yokoyama, M.
- Neue Suche nach: Iida, R.
- Neue Suche nach: Sugiyama, M.
- Neue Suche nach: Nakano, Y.
- Neue Suche nach: Takenaka, M.
- Neue Suche nach: Takagi, S.
In:
IPRM 2011
;
4
;
2011
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform
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Beteiligte:Ikku, Y. ( Autor:in ) / Yokoyama, M. ( Autor:in ) / Iida, R. ( Autor:in ) / Sugiyama, M. ( Autor:in ) / Nakano, Y. ( Autor:in ) / Takenaka, M. ( Autor:in ) / Takagi, S. ( Autor:in )
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Kongress:IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials ; 2011 ; Berlin, Germany
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Erschienen in:IPRM 2011 ; 4
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Verlag:
- Neue Suche nach: VDE VERLAG GMBH
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Erscheinungsdatum:01.01.2011
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Format / Umfang:4 pages
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ISBN:
-
Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 37
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Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 °CVizbaras, Kristijonas / Andrejev, Alexander / Vizbaras, Augustinas / Grasse, Christian / Arafin, Shamsul / Aman, Markus-Christian et al. | 2011
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Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer depositionSchleeh, J. / Halonen, J. / Nilsson, B. / Nilsson, P. Å. / Zeng, L. J. / Ramvall, P. / Wadefalk, N. / Zirath, H. / Olsson, E. / Grahn, J. et al. | 2011
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Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si WaferMaeda, Yasuna / Lee, Jieun / Atsumi, Yuki / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
- 106
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Design improvements for InP-based 90°-hybrid OEICs for 100GE coherent frontendsKunkel, R. / Bach, H.G. / Zhang, R. / Hoffmann, D. / Schmidt, D. / Schell, M. / Ortega, Mofiux A. / Romero-Garcia, S. / Molina-Fernandez, I. / Halir, R. et al. | 2011
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A 300 GHz InP/GaAsSb/InP HBT for high data rate applicationsMaher, H. / Delmouly, V. / Rouchy, U. / Renvoise, M. / Frijlink, P. / Smith, D. / Zaknoune, M. / Ducatteau, D. / Avramovic, V. / Scavennec, A. et al. | 2011
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High quality photonic crystal waveguide filters based on mode-gap effectShahid, Naeem / Naureen, Shagufta / Li, Mingyu / Swillo, Marcin / Anand, Srinivasan et al. | 2011
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20 nm Metamorphic HEMT with 660 GHz FTLeuther, A. / Koch, S. / Tessmann, A. / Kallfass, I. / Merkle, T. / Massler, H. / Loesch, R. / Schlechtweg, M. / Saito, S. / Ambacher, O. et al. | 2011
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High-speed directly-modulated lasers with photon-photon resonanceDumitrescu, M. / Telkkälä, J. / Karinen, J. / Viheriälä, J. / Laakso, A. / Afzal, S. / Reithmaier, J.-P. / Kamp, M. / Melanen, P. / Uusimaa, P. et al. | 2011
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GaP(100) and InP(100) surface structures in the MOVPE ambientDöscher, H. / Möller, K. / Vogt, P. / Kleinschmidt, P. / Hannappel, T. et al. | 2011
- 398
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25-Gb/s multi-channel 1.3-µm surface-emitting laserAdachi, K. / Shinoda, K. / Kitatani, T. / Matsuoka, Y. / Sugawara, T. / Tsuji, S. et al. | 2011
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ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics PlatformIkku, Y. / Yokoyama, M. / Iida, R. / Sugiyama, M. / Nakano, Y. / Takenaka, M. / Takagi, S. et al. | 2011
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Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs SubstratesKirch, J. / Dudley, P. / Kim, T. / Radavich, K. / Ruder, S. / Mawst, L. J. / Kuech, T. F. / LaLumondiere, S. D. / Sin, Y. / Lotshaw, W. T. et al. | 2011
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A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometerZhao, Z. / Ferlazzo, L. / Decobert, J. / Harmand, J. L. / Oudar, J. L. / Bouchoule, S. et al. | 2011
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A Generic InP-based Photonic Integration TechnologyAmbrosius, H. P. M. M. / Leijtens, X. J. M. / Vries, T. de / Bolk, J. / Smalbrugge, E. / Smit, M. K. et al. | 2011
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High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systemsVelthaus, K.-O. / Hamacher, M. / Gruner, M. / Brast, T. / Kaiser, R. / Prosyk, K. / Woods, I. et al. | 2011
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High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensorYatskiv, R. / Grym, J. / Zdansky, K. / Piksova, K. et al. | 2011
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Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer’s curvature measurement and ex-situ X-ray diffractionSodabanlu, H. / Ma, S. J. / Watanabe, K. / Sugiyama, M. / Nakano, Y. et al. | 2011
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Single-Wavelength InGaAs/AlAs(Sb) Quantum Cascade LasersSlight, Thomas / Phelan, Richard / Revin, Dmitry / McKee, Andrew / Cockburn, John / Kelly, Brian / Ironside, Charles et al. | 2011
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High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked LasersRosales, R. / Merghem, K. / Martinez, A. / Accard, A. / Lelarge, F. / Ramdane, A. et al. | 2011
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Current-injected Quantum-dot Microdisk Lasers Operating at Room TemperatureMao, M.-H. / Chien, H. C. / Hong, J. Z. et al. | 2011
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III-V on Silicon for High-Speed Electronics and CMOS PhotonicsTakenaka, Mitsuru / Takagi, Shinichi et al. | 2011
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Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substratesKhmissi, H. / Alouane, M. H. Hadj / Chauvin, N. / Naji, K. / Patriarche, G. / Ilahi, B. / Maaref, H. / Bru-Chevallier, C. / Gendry, M. et al. | 2011
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In situ characterization of III-V/Si(100) anti-phase disorderDoscher, Henning / Supplie, Oliver / Bruckner, Sebastian / Hannappel, Thomas et al. | 2011
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Novel concept for a Monolithically Integrated MEMS VCSELGruendl, Tobias / Nagel, Robin D. / Debernardi, Pierluigi / Geiger, Kathrin / Grasse, Christian / Hager, Thomas / Ortsiefer, Markus / Rosskopf, Jürgen / Boehm, Gerhard / Meyer, Ralf et al. | 2011
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Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring ResonatoMatsumoto, A. / Kuwata, K. / Akahane, K. / Utaka, K. et al. | 2011
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Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performanceWen, Yu / Wang, Yunpeng / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTsSaguatti, Davide / Isa, Muammar Mohamad / Ian, Ka Wa / Chini, Alessandro / Verzellesi, Giovanni / Fantini, Fausto / Missous, Mohamed et al. | 2011
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Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structureFukuda, Ayako / Esaki, Miyuki / Akimoto, Mio / Imai, Hajime et al. | 2011
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Preliminary results of storage accelerated aging test on InP/GaAsSb DHBTKoné, G. A. / Ghosh, S. / Grandchamp, B. / Maneux, C. / Marc, F. / Labat, N. / Zimmer, T. / Maher, H. / Bourqui, M. L. / Smith, D. et al. | 2011
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AlGaInAs based photonic devices for high-speed data transmissionYamamoto, Tsuyoshi / Simoyama, Takasi / Tanaka, Shinsuke / Matsuda, Manabu / Uetake, Ayahito / Okumura, Shigekazu / Ekawa, Mitsuru / Morito, Ken et al. | 2011
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Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct BondingLi, Linghan / Takigawa, Ryo / Higo, Akio / Higurashi, Eiji / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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Metamorphic Te-doped Al0.4In0.6Sb/Ga0.4In0.6Sb HEMT structures for low power and high frequency applicationsLoesch, R. et al. | 2011
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Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonicsJunesand, Carl / Hu, Chen / Wang, Zhechao / Metaferia, Wondwosen / Lourdudoss, Sebastian et al. | 2011
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MOVPE Growth and Optical Properties of Wurtzite InP Nanowires with Radial InP/InAsP Quantum WellsKawaguchi, Kenichi / Heurlin, Magnus / Lindgren, David / Borgström, Magnus T. / Samuelson, Lars et al. | 2011
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Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise AmplifiersTakahashi, T. / Sato, M. / Makiyama, K. / Nakasha, Y. / Hirose, T. / Hara, N. et al. | 2011
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On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration PlatformZhao, J. / Kleijn, E. / Williams, P. J. / Smit, M. K. / Leijtens, X. J. M. et al. | 2011
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Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dotsFain, Bruno / Girard, J. C. / David, C. / Patriarche, G. / Largeau, L. / Beveratos, A. / Elvira, D. / Robert-Philip, I. / Beaudoin, G. / Sagnes, I. et al. | 2011
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Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substratesHermannstädter, C. / Huh, J.-H. / Jahan, N. A. / Sasakura, H. / Suemune, I. et al. | 2011
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High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK ApplicationHu, Ting-Chen / Weimann, N. / Houtsma, V. / Kopf, R. / Tate, A. / Frackoviak, J. / Reyes, R. / Chen, Y. K. / Achouche, M. / Lelarge, F. et al. | 2011
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High-speed and high-power InGaAs/InP photodiodeYang, Hua / Daunt, Chris / Lee, Kohsin / Han, Wei / Gity, Farzan / Corbett, Brian / Peters, Frank H. et al. | 2011
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100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisationMo, J. J. / Wichmann, N. / Roelens, Y. / Zaknoune, M. / Desplanque, L. / Wallart, X. / Bollaert, S. et al. | 2011
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Low-Threshold 3 micrometer GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 deg CVizbaras, Kristijonas / Andrejew, Alexander / Vizbaras, Augustinas / Grasse, Christian / Arafin, Shamsul / Amann, Markus-Christian et al. | 2011
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InAs/InGaAsP Quantum Dots Emitting at 1.5 micrometer for Applications in LasersSemenova, E. S. / Kulkova, I. V. / Kadkhodazadeh, S. / Schubert, M. / Dunin-Borkowski, R. E. / Yvind, K. et al. | 2011
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Injection Velocity in Thin-Channel InAs HEMTsKim, Tae-Woo / Alamo, Jesús A. del et al. | 2011
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MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxyBruckner, Sebastian / Döscher, Henning / Dobrich, Anja / Supplie, Oliver / Kleinschmidt, Peter / Hannappel, Thomas et al. | 2011
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25-Gb/s Multi-channel 1.3-micrometer Surface-emitting LaserAdachi, K. / Shinoda, K. / Kitatani, T. / Matsuoka, Y. / Sugawara, T. / Tsuji, S. et al. | 2011
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Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCsSoares, F. M. / Zhang, Z. / Przyrembel, G. / Lauermann, M. / Moehrle, M. / Zawadzki, C. / Zittermann, B. / Keil, N. / Grote, N. et al. | 2011
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High Current Gain of Doping-Graded GaAsSb/lnP DHBTsWu, Bing-Ruey / Dvorak, Martin W. / Colbus, Patrick / Low, Tom S. / D'Avanzo, Don et al. | 2011
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High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector InterfaceWang, H. / Mao, S. et al. | 2011
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Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectricMorassi, Luca / Verzellesi, Giovanni / Pavan, Paolo / Veksler, Dmitry / Ok, Injo / Zhao, Han / Lee, Jack C. / Bersuker, Gennadi et al. | 2011
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High Performance Submicron RTD Design for mm-Wave Oscillator ApplicationsKamgaing, A. Tchegho / Muenstermann, B. / Geitmann, R. / Benner, O. / Blekker, K. / Prost, W. / Tegude, F. J. et al. | 2011
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A Compact High-Speed RTD-based Reconfigurable Logic GateLee, Jooseok / Lee, Jongwon / Yang, Kyounghoon et al. | 2011
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8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer runLawniczuk, K. / Piramidowicz, R. / Szczepanski, P. / Williams, P. J. / Wale, M. J. / Smit, M. K. / Leijtens, X. J. M. et al. | 2011
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InP Lattice-matched HEMT with Regrown Source/Drain by MOCVDLi, Qiang / Li, Ming / Tang, Chak Wah / Lau, Kei May et al. | 2011
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Strain Effects on Performance of AlGaInAs/InP Single Quantum Well LasersSapkota, Durga Prasad / Kayastha, Madhu Sudan / Wakita, Koichi et al. | 2011
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Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy ApplicationsAlt, A. R. / Bolognesi, C. R. / Gallego, J. D. / Diez, C. / Lopez-Fernandez, I. / Barcia, A. et al. | 2011
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Lateral Current Injection Distributed Feedback Laser with Wirelike Active RegionsShindo, Takahiko / Okumura, Tadashi / Futami, Mitsuaki / Osabe, Ryo / Ito, Hitomi / Koguchi, Takayuki / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs HeterostructureHalevy, Ran / Cohen, Shimon / Gavrilov, Arkadi / Ritter, Dan et al. | 2011
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Waveguide AlInAs/GaInAs APD for 40Gb/s optical receiversLahrichi, M. / Glastre, G. / Paret, J.-F. / Carpentier, D. / Lanteri, D. / Lagay, N. / Decobert, J. / Achouche, M. et al. | 2011
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Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum DotsWenning, Felix / Kuenzel, Harald / Pohl, Udo W. et al. | 2011
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4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operationUeda, Yuta / Koyama, Noriaki / Kambayashi, Kazuki / Fujimoto, Shinji / Utaka, Katsuyuki / Shiota, Takashi / Kitatani, Takeshi et al. | 2011
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Performance and Reliability Investigations of Waveguide-Integrated PhotodetectorsKroh, Marcel / Beling, Andreas / Trommer, Dirk / Margraf, Michael / Unterbörsch, Günter et al. | 2011
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InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICsPark, Jaehong / Lee, Jongwon / Lee, Jooseok / Jeong, Yongsik / Yang, Kyounghoon et al. | 2011
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Nanoimprint lithography for photonic devicesNiemi, Tapio et al. | 2011
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80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity LasersTakeda, Koji / Sato, Tomonari / Shinya, Akihiko / Nozaki, Kengo / Chen, Chin-Hui / Kawaguchi, Yoshihiro / Taniyama, Hideaki / Notomi, Masaya / Matsuo, Shinji et al. | 2011
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III-V CMOS: What have we learned from HEMTs?Alamo, Jesús A. del / Kim, Dae-Hyun / Kim, Tae-Woo / Jin, Donghyun / Antoniadis, Dimitri A. et al. | 2011
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Reduction of source parasitic capacitance in vertical InGaAs MISFETMatsumoto, Yutaka / Saito, Hisashi / Miyamoto, Yasuyuki et al. | 2011
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Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder ModulatorsO'Callaghan, James R. / Roycroft, Brendan / Guo, Wei-Hua / Lu, Q. Y. / Daunt, Chris / Donegan, John / Peters, Frank H. / Corbett, Brian et al. | 2011
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Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent FrontendsKunkel, R. / Ortega-Moñux, A. / Bach, H.-G. / Zhang, R. / Hoffmann, D. / Schmidt, D. / Schell, M. / Romero-García, S. / Molina-Fernandez, I. / Halir, R. et al. | 2011
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Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applicationsZhao, Huan / Do, Thanh Ngoc Thi / Sobis, Peter / Tang, Aik-Yean / Yhland, Klas / Stenarson, Jörgen / Stake, Jan et al. | 2011
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FT-DLTS studies on deep levels in InAs quantum dashes grown on InPZouaoui, Mouna / Regreny, Philippe / Ajjel, Ridha / Girard, Philippe / Gendry, Michel / Bremond, Georges et al. | 2011
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Improvement of modal gain of InAs/InP Quantum-Dash LasersMerghem, K. / Rosales, R. / Martinez, A. / Patriarche, G. / Ramdane, A. / Chimot, N. / Dijk, F. van / Moustapha-Rabault, Y. / Poingt, F. / Lelarge, F. et al. | 2011
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Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTsMorassi, Luca / Verzellesi, Giovanni / Larcher, Luca / Zhao, Han / Lee, Jack C. et al. | 2011
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Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 micrometer combined with liquid crystalCastany, O. / Paranthoen, C. / Levallois, C. / Shuaib, A. / Gauthier, J. P. / Chevalier, N. / Durand, O. / Dupont, L. / Corre, A. Le et al. | 2011
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Strain Effects on Performances in InAs HEMTsMachida, F. / Nishino, H. / Sato, J. / Watanabe, H. / Hara, S. / Fujishiro, H. I. et al. | 2011
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Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometerTalneau, A. / Chouteau, D. / Mauguin, O. / Largeau, L. / Sagnes, I. / Patriarche, G. et al. | 2011
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Structural evaluation of GaAs1-xBix mixed crystals by TEMUeda, Osamu / Tominaga, Yoriko / Ikenaga, Noriaki / Yoshimoto, Masahiro / Oe, Kunishige et al. | 2011
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InGaAs MOS-HEMTs on Si Substrates Grown by MOCVDZhou, Xiuju / Tang, Chak Wah / Li, Qiang / Lau, Kei May et al. | 2011
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Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active RegionsTakahashi, Daisuke / Lee, Seunghun / Shindo, Takahiko / Shinno, Keisuke / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capabilityKreissl, Jochen / Bornholdt, Carsten / Gaertner, Tom / Moerl, Ludwig / Przyrembel, Georges / Rehbein, Wolfgang et al. | 2011
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Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell propertiesWang, Yunpeng / Wen, Yu / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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On the remarkable morphological organization of homoepitaxial MOVPE InP filmsGocalinska, A. / Manganaro, M. / Pelucchi, E. et al. | 2011
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Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit LayersTeranishi, A. / Shizuno, K. / Suzuki, S. / Asada, M. / Sugiyama, H. / Yokoyama, H. et al. | 2011
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Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structureHirooka, M. / Kawashima, F. / Iwane, Y. / Saegusa, T. / Shimomura, K. et al. | 2011
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Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrateLaurain, A. / Michon, A. / Garnache, A. / Beaudoin, G. / Roblin, C. / Cambril, E. / Sagnes, I. et al. | 2011
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X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probabilityKajikawa, Y. / Iseki, Y. / Matsui, Y. et al. | 2011
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Narrow Linewidth 1.52 micrometer InAs/InP Quantum Dot DFB LasersPoole, P. J. / Lu, Z. G. / Liu, J. R. / Barrios, P. / Jiao, Z. J. / Poitras, D. / SpringThorpe, A. J. / Pakulski, G. / Goodchild, D. / Rioux, B. et al. | 2011
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Metal-cavity Nanolasers - Theory and ExperimentChuang, Shun Lien / Lu, Chien-Yao / Chang, Shu-Wei / Germann, Tim D. / Pohl, Udo W. / Bimberg, Dieter et al. | 2011
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Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active RegionShirao, Mizuki / Sato, Takashi / Takino, Yuta / Sato, Noriaki / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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Integration of III/V lattice-matched on (001) Silicon for optoelectronicKunert, Bemardette / Volz, Kerstin / Stolz, Wolfgang et al. | 2011
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Time Resolved Measurement of Interface and Bulk Recombination of Solar Cell MaterialsSzabó, Nadine / Schwarzburg, Klaus / Dobrich, Anja / Hannappel, Thomas et al. | 2011
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Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter BoardsKaiser, R. / Velthaus, K. O. / Brast, T. / Maul, B. / Gruner, M. / Klein, H. / Hamacher, M. / Hoffmann, D. / Schell, M. et al. | 2011
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InP HBT Technology Activities in EuropeKonczykowska, Agnieszka et al. | 2011
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Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge GrowthFirrincieli, Andrea / Vincent, B. / Waldron, N. / Simoen, E. / Claeys, C. / Kittl, J. et al. | 2011
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High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna StructureShiraishi, M. / Shibayama, H. / Ishigaki, K. / Suzuki, S. / Asada, M. / Sugiyama, H. / Yokoyama, H. et al. | 2011
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Structural characterisation of GaP/Si nanolayersGuo, W. / Thanh, T. Nguyen / Elias, G. / Létoublon, A. / Cornet, C. / Ponchet, A. / Bondi, A. / Rohel, T. / Bertru, N. / Robert, C. et al. | 2011
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Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-LaserMoehrle, Martin / Przyrembel, Georges / Bornholdt, Carsten / Sigmund, Ariane / Molzow, Wolf-Dietrich / Klein, Holger et al. | 2011
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Metamorphic and Non-conventional 'Buffer' LayersKuech, T. F. / Jha, S. / Wiedmann, M. K. / Paulson, C. A. / Babcock, S. E. / Kuan, T. S. / Mawst, L. J. / Kirch, J. / Kimd, Tae Wan et al. | 2011
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The optoelectronic performance of axial and radial GaAs nanowire pn-diodesLysov, A. / Gutsche, C. / Offer, M. / Regolin, I. / Prost, W. / Tegude, F.-J. et al. | 2011
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Thermal Dissipation In InP Based Optical Lasers and AmplifiersJacquet, Joël / Faugeron, Mickael / Abner, Yannick / Choffla, Manish / Dijk, Frédéric Van / Brenot, Romain et al. | 2011
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Regrowth-Free Multi-Guide Vertical Integration in InP for Optical CommunicationsTolstikhin, Valery et al. | 2011
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Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applicationsGuillamet, Ronan / Lagay, Nadine / Mocuta, Cristian / Carbone, Gerardina / Lagrée, Pierre-Yves / Decobert, Jean et al. | 2011
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Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)Lenz, Andrea / Eisele, Holger / Genz, Florian / Franke, Dieter / Künzel, Harald / Pohl, Udo W. / Dähne, Mario et al. | 2011
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All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder InterferometerShoji, Yuya / Akimoto, Ryoichi / Kintaka, Kenji / Suda, Satoshi / Kawashima, Hitoshi / Gozu, Shin-ichiro / Mozume, Teruo / Kuwatsuka, Haruhiko / Hasama, Toshifumi / Ishikawa, Hiroshi et al. | 2011
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Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar TransistorsChang, Che-An / Chen, Shu-Han / Wang, Sheng-Yu / Chang, Chao-Min / Chyi, Jen-Inn et al. | 2011
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Pyramidal quantum dots: a versatile playground for quantum dot design and physicsPelucchi, E. / Dimastrodonato, V. / Mereni, L. O. / Juska, G. / Gocalinska, A. et al. | 2011
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Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopyKim, K. M. / Kim, W. B. / Krishnamurthy, D. / Ishimaru, M. / Kobayashi, H. / Hasegawa, S. / Asahi, H. et al. | 2011
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Extended X-ray absorption fine structure of InAsPSbWu, Chen-Jun / Tsai, Gene / Feng, Zhe-Chuan / Lin, Hao-Hsiung et al. | 2011
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High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTsBouvier, Y. / Nagatani, M. / Sano, K. / Murata, K. / Kurishima, K. / Ida, M. et al. | 2011
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Carrier Injection in GaAsPN/GaPN Quantum Wells on SiliconCornet, C. / Robert, C. / Thanh, T. Nguyen / Guo, W. / Bondi, A. / Elias, G. / Létoublon, A. / Richard, S. / Burin, J.-P. / Perrin, M. et al. | 2011
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Narrow linewidth 1.55 micrometer laterally-coupled DFB lasers fabricated using nanoimprint lithographyTelkkälä, Jarkko / Viheriälä, Jukka / Bister, Mariia / Karinen, Jukka / Melanen, Petri / Dumitrescu, Mihail / Guina, Mircea et al. | 2011
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Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum DotsPoole, P. J. / Dalacu, D. / Lapointe, J. / Mnaymneh, K. / Wu, X. et al. | 2011
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High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic OperationEndoh, Akira / Watanabe, Issei / Mimura, Takashi / Matsui, Toshiaki et al. | 2011
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Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloysKim, S. H. / Yokoyama, M. / Taoka, N. / Iida, R. / Lee, S. / Nakane, R. / Urabe, Y. / Miyata, N. / Yasuda, T. / Yamada, H. et al. | 2011
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Two-bandgap semiconductor optical amplifier integrated using quantum well intermixingLee, Ko-Hsin / Webb, Roderick P. / Manning, Robert J. / Roycroft, Brendan / O’Callaghan, James / Peters, Frank H. / Corbett, Brian et al. | 2011
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Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTsScavennec, André / Maher, Hassan / Decobert, Jean et al. | 2011
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Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser DiodesJiang, H. / Chaen, Y. / Hagio, T. / Tsuruda, K. / Jizodo, M. / Matsuo, S. / Hamamoto, K. et al. | 2011