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A 0.7–7 GHz wideband reconfigurable receiver RF front-end in CMOS
PaperIOP Institute of Physics | 2018| -
Robust and low power register file in 65 nm technology
NationallizenzSEMICONDUCTOR INTEGRATED CIRCUITSIOP Institute of Physics | 2012| -
An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting regionProject supported by the Doctoral Program of Higher Education of China (RFDP) (No. 20136118110004), and the National Natural Science Foundation of China (Nos. 51077110, 51477137).
PaperIOP Institute of Physics | 2015| -
Solution-processed bathocuproine cathode buffer layer towards efficient planar heterojunction perovskite solar cells
PaperIOP Institute of Physics | 2019| -
Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs Project partly supported by the Key Research and Development Program of Jiangsu Province (No. BE2016084), the National Natural Science Foundation of China (Nos. 11404372, 6157401, 61704185), the Natural Science Foundation of Beijing, China (No. 4182015), the Scientific Research Fund Project of Municipal Education Commission of Beijing (No. PXM2017_014204_500034), the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767), and the National Key Research and Development Program of China (No. 2016YFC0801203).
PaperIOP Institute of Physics | 2018| -
Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure
LetterIOP Institute of Physics | 2021| -
Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping
IOP Institute of Physics | 2023| -
Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer
NationallizenzSemiconductor DevicesIOP Institute of Physics | 2013| -
The investigation of the zero temperature coefficient point of power MOSFET
PaperIOP Institute of Physics | 2016| -
Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells Project partly supported by the National High Technology Research and Development Program of China (No. 2011AA050504).
PaperIOP Institute of Physics | 2017| -
Position multiplexing for multiple-image encryption
NationallizenzIOP Institute of Physics | 2006| -
A digital calibration technique for an ultra high-speed wide-bandwidth folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology
NationallizenzSEMICONDUCTOR INTEGRATED CIRCUITSIOP Institute of Physics | 2011| -
ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
NationallizenzSEMICONDUCTOR MATERIALSIOP Institute of Physics | 2009| -
Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure
NationallizenzIOP Institute of Physics | 2009| -
Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method
PaperIOP Institute of Physics | 2018| -
A 83 GHz InP DHBT static frequency divider
Semiconductor Integrated CircuitsIOP Institute of Physics | 2014| -
A 0.6-V, 69-dB subthreshold sigma–delta modulator Project supported by the National Natural Science Foundation of China (No. 61704143), the Natural Science Foundation of Fujian Province (No. 2018J01566), the Young and Middle-Aged Teacher Education Research Project of Fujian Province (No. JAT170428), and the High-Level Talent Project of Xiamen University of Technology (No. YKJ17019R).
PaperIOP Institute of Physics | 2018|
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