Erscheinungsjahr
Medientyp
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Investigation of III–V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
Online Contents | 2014| -
Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces
Freier ZugriffAmerican Institute of Physics | 2024| -
Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi
IOP Institute of Physics | 2014| -
Observation of atomic ordering of triple-period-A and -B type in GaAsBi
American Institute of Physics | 2014| -
Photoionization spectrum in double-barrier quantum wells: Exact expansion over resonances and natural line shape
NationallizenzAmerican Physical Society | 2001| -
Application of the Delphi Method for the Analysis of the Factors Determining Social Entrepreneurship
Freier ZugriffDOAJ | 2017| -
Determinant factors in entrepreneurial intention among Social Work degree students: the moderating effect of entrepreneurship education
Emerald Group Publishing | 2022| -
Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
Freier ZugriffArXiv | 2012| -
Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length
British Library Online Contents | 2017| -
Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length
British Library Online Contents | 2017| -
Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers
PaperIOP Institute of Physics | 2015| -
Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga,In)(N,As) multiple quantum wells
NationallizenzAmerican Institute of Physics | 2006| -
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Freier ZugriffArXiv | 2019| -
Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy
American Institute of Physics | 2016| -
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
PaperIOP Institute of Physics | 2017| -
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
NationallizenzAmerican Institute of Physics | 2012| -
Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes
Freier ZugriffArXiv | 2023| -
Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
Freier ZugriffDOAJ | 2024| -
Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy
PaperIOP Institute of Physics | 2017| -
Implementación de las TIC en la enseñanza de la física, factibilidad y eficacia en nuestro país
Freier ZugriffDOAJ | 2011| -
Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb
Freier ZugriffBASE | 2019| -
Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb
Freier ZugriffDataCite | 2019| -
Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires
a combined photoluminescence and resonant Raman scattering studyDataCite | 2014| -
A new ornithomimid dinosaur from the Upper Cretaceous Packard Shale formation (Cabullona Group) Sonora, México
British Library Online Contents | 2016| -
A new ornithomimid dinosaur from the Upper Cretaceous Packard Shale formation (Cabullona Group) Sonora, México
British Library Online Contents | 2016| -
A new ornithomimid dinosaur from the Upper Cretaceous Packard Shale formation (Cabullona Group) Sonora, México
British Library Online Contents | 2016| -
A new ornithomimid dinosaur from the Upper Cretaceous Packard Shale formation (Cabullona Group) Sonora, México
British Library Online Contents | 2016|
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