Erscheinungsjahr
Medientyp
Format
Lizenz
Sprache
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Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga~2O~3 or Diamond Part II
British Library Conference Proceedings | 2022| -
Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide
NationallizenzAmerican Institute of Physics | 2007| -
Application of nanoimprinting technology to organic field-effect transistors
Online Contents | 2010| -
General theory of acceptor-oxygen-vacancy complex single donor in high-dielectric-constant metallic oxide insulators
NationallizenzAmerican Institute of Physics | 2005| -
The preparation and characterization of nearly hysteresis‐free metal‐nitride‐silicon capacitors on both p‐ and n‐type silicon substrates
NationallizenzAmerican Institute of Physics | 1992| -
The use of far‐infrared ceramic heaters for radiation heating of glass in vacuum deposition processes
American Institute of Physics | 1988| -
General theory of acceptor-oxygen-vacancy complex single donor in high-dielectric-constant metallic oxide insulators (3 pages)
British Library Online Contents | 2005| -
Pulsed Nd:YAG Laser Cutting of Al/Li/SiC Metal Matrix Composites
NationallizenzTaylor & Francis Verlag | 1996| -
Mechanism behind the stress-induced change in boron and arsenic diffusion in silicon devices and its experimental verification
British Library Online Contents | 2011| -
Analysis of and some design considerations for the constant capacitance DLTS system
NationallizenzTaylor & Francis Verlag | 1982| -
Evidence of recombination enhanced diffusion of impurities at low temperature into high-k dielectric with tantalum oxide as an example
NationallizenzAmerican Institute of Physics | 2010| -
Stability of electrical properties of nitrogen‐rich, silicon‐rich, and stoichiometric silicon nitride films
NationallizenzAmerican Institute of Physics | 1989| -
Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping
NationallizenzAmerican Institute of Physics | 2007| -
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500degreeC by Ohmic contact recess etching
British Library Online Contents | 2009| -
An Examination of Wire Electrical Discharge Machining (WEDM) of Al2O3 Particulate Reinforced Aluminum Based Composites
NationallizenzTaylor & Francis Verlag | 1996| -
Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness
Freier ZugriffAmerican Institute of Physics | 2014| -
An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits
British Library Online Contents | 2014| -
An intelligent hybrid system for initial process parameter setting of injection moulding
NationallizenzTaylor & Francis Verlag | 2000| -
Pulsed Nd:YAG Laser Cutting of Al-Li/SiC Metal Matrix Composites
British Library Online Contents | 1996| -
Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation
Online Contents | 1987| -
Highly conducting transparent undoped indium oxide films deposited below 100°C by activated reactive evaporation
NationallizenzSpringer Verlag | 1986| -
Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation
NationallizenzSpringer Verlag | 1987| -
Machining of Engineering Ceramics by Ultrasonic Vibration Assisted EDM Method
NationallizenzTaylor & Francis Verlag | 1998| -
Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy
NationallizenzAmerican Institute of Physics | 2003| -
E/11 Effects of Powder Geometry and Composition in Coaxial Laser Deposition of 316L Steel for Rapid Prototyping
British Library Online Contents | 2003| -
Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing
NationallizenzAmerican Institute of Physics | 2006| -
Application of zero-temperature-gradient zero-bias thermally stimulated current spectroscopy to ultrathin high-dielectric-constant insulator film characterization
NationallizenzAmerican Institute of Physics | 2006| -
The application of polyimide/silicon nitride dual passivation to AlxGa1-xN/GaN high electron mobility transistors
British Library Online Contents | 2008| -
Survey on ISO 9000 quality management system implementation in Hong Kong
British Library Online Contents | 1999| -
Efficient Detection of Oxygen Vacancy Double Donors in Capacitors With Ultra-Thin Ta~2O~5 Films for DRAM Applications by Zero-Bias Thermally Stimulated Current Spectroscopy
British Library Conference Proceedings | 2005| -
Wear characteristics and flank wear model of the main cutting edges in spade drilling of ductile metals
British Library Online Contents | 1997| -
Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping (3 pages)
British Library Online Contents | 2007| -
Surface Smoothing Effect of an Amorphous Thin Film Deposited by Chemical Vapor Deposition or Atomic Layer Deposition
British Library Conference Proceedings | 2014|
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