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Synonyme wurden verwendet für: quantenpunkt
Suche ohne Synonyme: quantenpunkt
Verwendete Synonyme:
- nulldimensionales quantenwell
- quantenbox
- quantendot
- quantum box
- quantum dot
- quantum dots
- quantum point
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Nanofabrication Of Quantum Coupled Devices
SPIE | 1988|A new generation of integrated circuits is foreseen in which quantum dots with discrete electronic states are used to construct logic and ... -
Gordon Research Conference on Organometallic Chemistry, Held in Newport, Rhode Island on 27 June - 1 July 1988
NTIS | 1988|chemistry, Symposia, Quantum dots, FTIR methods, Asymmetric hydrogenation catalysis, Olefin polymerization. (jg) ... -
Size-induced metal-insulator transition in metals and semiconductors
NationallizenzElsevier | 1988|all three dimensions (“quantum dots”) and hence are of universal character. In addition to their fundamental importance, the observations now ... -
GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser
IET Digital Library Archive | 1988|Schlagwörter: quantum box laser -
Femtosecond optical nonlinearities of CdSe quantum dots
Tema Archiv | 1989|Schlagwörter: CDSE QUANTUM DOTS -
Quantised Hall effect and magnetoresistance through a quantum point contact
Tema Archiv | 1989|The four-terminal magnetoresistance and quantised Hall effect through a quantum point contact are investigated in a two-dimensional ...Schlagwörter: QUANTUM POINT CONTACT -
Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots
Tema Archiv | 1989|cathodoluminescence was used to measure the relative luminescence efficiencies of etched quantum dots as a function of size, etch depth and etching conditions ...Schlagwörter: QUANTENPUNKT, ETCHED MQW QUANTUM DOTS, ETCHED QUANTUM DOTS, GAAS-ALGAAS QUANTUM DOTS -
Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots
American Institute of Physics | 1989|used to measure the relative luminescence efficiencies of etched quantum dots as a function of size, etch depth and etching conditions, and ... -
Fabrication of a gated resonant tunneling diode with a laterally adjustable quantum dot cross-section
Tema Archiv | 1989|feasibility of in situ transition from a two-dimensional electron gas to a zero-dimensional quantum dot. ...Schlagwörter: LATERALLY ADJUSTABLE QUANTUM DOT CROSS-SECTION, ZERO-DIMENSIONAL QUANTUM DOT -
Field induced refractive index variation in quantum box structure for intersectional optical switch
Tema Archiv | 1989|deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. The authors found that ...Schlagwörter: QUANTUM BOX STRUCTURE -
Spectral characteristics of linewidth enhancement factor alpha of multidimensional quantum wells
Tema Archiv | 1989|a quantum box, alpha is almost zero at the gain peak, and becomes negative at a shorter wavelength. The negative alpha yields the ...Schlagwörter: QUANTUM BOX -
A new phase in the exploration of quantum microstructures-with emphasis on laterally-defined semiconductor superstructures
Tema Archiv | 1989|that are presented by the quantum wire, quantum box and laterally-defined semiconductor superstructures. The author points out that if the ...Schlagwörter: QUANTUM BOX -
Frequency doubling and phase matching with II–VI microcrystals
NationallizenzElsevier | 1989|semiconductor quantum dots for phase-matching and/or generation of second harmonic light is presented. Approximate near-resonance susceptibilities of ... -
Ultrafast optical nonlinearities in II–VI compounds
NationallizenzElsevier | 1989|femtosecond laser excited CdS and CdSe bulk and quantum dots. Optical Stark effect in bulk CdS is ... -
Nonlinear optical properties of wide-gap II–VI bulk semiconductors and microcrystallites
NationallizenzElsevier | 1989|situation of strong zero-dimensional quantum confinement. We report on the observation of the DC Stark effect on CdS quantum dots. ... -
Nanoelectronics: Fanciful physics or real devices?
American Institute of Physics | 1989|devices will only be confronted in the limit of three‐dimensional confinement, i.e., ‘‘quantum dots.’’ The implementation of these discrete ... -
Nonlinear Transmission In A Colored Glass Fabry-Perot
SPIE | 1989|semiconductor crystals, and pushing further the quantum confinement to comprise all the three space dimensions (quantum dots, QDs) is the next step ... -
Series addition of ballistic resistors
Tema Archiv | 1989|We have measured the series resistance of two ballistic resistors, or quantum point contacts, in two configurations. First when the ... -
Quantum interference devices fabricated using molecular-beam epitaxy and ultra-high-resolution electron-beam lithography
Tema Archiv | 1989|scanned. Several novel QIDs are presented with emphasis on a new lateral quantum box transistor (LQBFET), which has a railway track gate ...Schlagwörter: LATERAL QUANTUM BOX TRANSISTOR
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