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A morpho-statistical evaluation of the defect distribution
NationallizenzIOP Institute of Physics | 1988| -
Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE
NationallizenzIOP Institute of Physics | 1989| -
High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy
NationallizenzIOP Institute of Physics | 1990| -
Measurement of Young's modulus and internal stress in silicon microresonators using a resonant frequency technique
NationallizenzIOP Institute of Physics | 1990| -
Growth and properties of thin SiO2 films by inductively coupled low-temperature plasma anodisation
NationallizenzIOP Institute of Physics | 1990| -
High electron mobility in modulation-doped GaxIn1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy
NationallizenzIOP Institute of Physics | 1990| -
Growth of III-V compounds on vicinal planes by molecular beam epitaxy
NationallizenzIOP Institute of Physics | 1990| -
Optimization of phase sensitive detectors using fast Fourier transform
NationallizenzIOP Institute of Physics | 1991| -
Theoretical studies of AC photothermal and AC electrothermal responses of semiconductor p-n junction devices
NationallizenzIOP Institute of Physics | 1991| -
Reflectance characterization of semiconductor quantum wells by Fourier transform spectroscopy
NationallizenzIOP Institute of Physics | 1991| -
A study of non-equilibrium phenomena in linear-sweep MIS capacitors
NationallizenzIOP Institute of Physics | 1992| -
A method of determining generation lifetime suitable for computer-aided measurement
NationallizenzIOP Institute of Physics | 1992| -
Effect of surface recombination and injection level on the diffusion length obtained by simulation of the SPV method
NationallizenzIOP Institute of Physics | 1992| -
An explanation of field-enhanced non-equilibrium transients of pulsed MOS capacitors
NationallizenzIOP Institute of Physics | 1993| -
A review of the plasma oxidation of silicon and its applications
NationallizenzIOP Institute of Physics | 1993| -
Barrier-doped ZnSe:Te-(CdSe)m(ZnSe)n short-period superlattice quantum wells: atomic layer epitaxial growth and optical properties
NationallizenzIOP Institute of Physics | 1993| -
Research on the validity of the steady-state calorimeter for measuring the total hemispherical emissivity of solids
NationallizenzIOP Institute of Physics | 1993| -
Improvement of electroluminescence properties of light-emitting porous silicon
NationallizenzIOP Institute of Physics | 1993| -
Rapid interpretation of the linear sweep MOS C-t transients
NationallizenzIOP Institute of Physics | 1994|
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