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Novel CMOS-based multi-band terahertz detector for passive imaging
IOP Institute of Physics | 2022| -
All-optical switching based on self-assembled halide perovskite microwires
IOP Institute of Physics | 2022| -
Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode
PaperIOP Institute of Physics | 2021| -
Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
NationallizenzIOP Institute of Physics | 2010| -
Heteroepitaxial β-Ga2O3 thick films on sapphire substrate by carbothermal reduction rapid growth method
IOP Institute of Physics | 2022| -
Analytical models for the base transit time of a bipolar transistor with double base epilayers
NationallizenzIOP Institute of Physics | 2009| -
A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy
PaperIOP Institute of Physics | 2020| -
A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technologyProject supported by the National Basic Research Program of China (No. 2010CBxxxx05), the Advance Research Project of China (No. 51308xxxx06), the Advance Research Foundation of China (No. 9140A08xxxx11DZ111), and Doctoral Scientific Research Foundation of Henan University of Science and Technology (No. 400613480011), and the Foundation of He'nan Educational Commettee (No. 15A510001).
PaperIOP Institute of Physics | 2015| -
Neutron radiation effect on 4H-SiC MESFETs and SBDs
NationallizenzIOP Institute of Physics | 2010| -
Fluorine-containing organic ammonium salt-doped inverted inorganic perovskite solar cells
IOP Institute of Physics | 2022| -
The fabrication and ultraviolet detecting properties of ZnMgO-based thin film transistor by laser molecular beam epitaxy
NationallizenzIOP Institute of Physics | 2010| -
High-frequency characterization of high-speed modulators and photodetectors in a link with low-speed photonic sampling
PaperIOP Institute of Physics | 2021| -
High temperature characterization of double base epilayer 4H-SiC BJTs
NationallizenzIOP Institute of Physics | 2010| -
Electronic origin of structural degradation in Li-rich transition metal oxides: The case of Li2MnO3 and Li2RuO3
IOP Institute of Physics | 2024| -
CMOS analog and mixed-signal phase-locked loops: An overview
PaperIOP Institute of Physics | 2020| -
Recent progress of efficient flexible solar cells based on nanostructures
IOP Institute of Physics | 2021| -
First-principles calculation on the concentration of intrinsic defects in 4H-SiC
NationallizenzSEMICONDUCTOR MATERIALSIOP Institute of Physics | 2013| -
Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition
IOP Institute of Physics | 2022| -
Healing detrimental defects in two-dimensional semiconductors through strain engineering
PaperIOP Institute of Physics | 2018| -
The dual cycle bridge detection of piezoresistive triaxial accelerometer based on MEMS technology
Semiconductor DevicesIOP Institute of Physics | 2014| -
A unipolar nano-diode detector with improved performance using the high-k material SiNx
PaperIOP Institute of Physics | 2018| -
Resistive switching characteristics of Ni/HfO2/Pt ReRAM
NationallizenzSEMICONDUCTOR DEVICESIOP Institute of Physics | 2012| -
Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region
NationallizenzIOP Institute of Physics | 2009| -
Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature
PaperIOP Institute of Physics | 2018| -
Simulated study on the InP/InGaAs DHBT under proton irradiationProject supported by the National Basic Research Program of China (No. 2010CB327505), Advance Research project of China (No. 51308xxxx06), and Advance Research Foundation of China (No. 9140A08xxxx11DZ111).
PaperIOP Institute of Physics | 2016| -
A multifunctional switched-capacitor programmable gain amplifier for high-definition video analog front-endsProject supported by the National Natural Science Foundation of China (No. 61106027), and the Science and Technology Project of Shanxi Province (No. 2014K05-14).
PaperIOP Institute of Physics | 2015| -
A novel method to determine the helical phase structure of Laguerre–Gaussian beams
NationallizenzIOP Institute of Physics | 2009| -
Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices
PaperIOP Institute of Physics | 2017| -
Bound polaron in a strained wurtzite GaN/AlxGa1−xN cylindrical quantum dot
NationallizenzSEMICONDUCTOR PHYSICSIOP Institute of Physics | 2011| -
LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV application
NationallizenzIOP Institute of Physics | 2012| -
Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer
NationallizenzIOP Institute of Physics | 2009| -
Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
IOP Institute of Physics | 2023| -
High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation
IOP Institute of Physics | 2023| -
Design of a reliable PUF circuit based on R–2R ladder digital-to-analog convertorProject supported by the National Natural Science Foundation of China (Nos. 61474068, 61404076, 61274132), the Zhejiang Provincial Natural Science Foundation of China (No. LQ14F040001), and the K. C. Wong Magna Fund in Ningbo University, China.
PaperIOP Institute of Physics | 2015| -
High accuracy digital aging monitor based on PLL-VCO circuit
Semiconductor Integrated CircuitsIOP Institute of Physics | 2015| -
A 6-bit 3-Gsps ADC implemented in 1 μm GaAs HBT technology
Semiconductor Integrated CircuitsIOP Institute of Physics | 2014| -
Piezoelectricity of 2D nanomaterials: characterization, properties, and applications
Topical ReviewIOP Institute of Physics | 2017| -
Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuitsProject supported by the National Basic Research Program of China (No. 2011CBA00608), the National Natural Science Foundation of China (Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China (Nos. 2013AA013602, 2013AA031903, 2013AA032204).
ReviewIOP Institute of Physics | 2015| -
ZnO nanowire network transistors based on a self-assembly method
NationallizenzSEMICONDUCTOR DEVICESIOP Institute of Physics | 2012| -
Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction
NationallizenzIOP Institute of Physics | 2009| -
A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance
Semiconductor DevicesIOP Institute of Physics | 2014| -
Aluminum/MoO3 anode thin films: an effective anode structure for high-performance flexible organic optoelectronics
NationallizenzSEMICONDUCTOR MATERIALSIOP Institute of Physics | 2012|
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