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Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
Online Contents | 2016|Schlagwörter: Forward Bias -
Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
Online Contents | 2016|Schlagwörter: Forward Bias -
Structural, morphological, optical and electrical properties of nail-shaped CdO nanoparticles synthesized by chemical route assisted microwave irradiation method for P–N junction diode application
Online Contents | 2017|Schlagwörter: Forward Bias -
Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + $ Ca_{1.9} $$ Pr_{0.1} $$ Co_{4} $$ O_{x} $-doped poly(vinyl alcohol)) interfacial layer
Online Contents | 2017|Schlagwörter: Forward Bias -
Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature
Online Contents | 2017|Schlagwörter: Forward Bias -
Ultraviolet electroluminescence from n-ZnO/i-MgO/$ p^{+} $-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering
Online Contents | 2012|Schlagwörter: Applied Forward Bias, Forward Bias -
Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-$ Ca_{1.9} $$ Pr_{0.1} $$ Co_{4} $$ O_{x} $/n-Si structures at forward biases using impedance spectroscopy analysis
Online Contents | 2015|Schlagwörter: Forward Bias -
Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure
Online Contents | 2001|Schlagwörter: Forward Bias, Forward Bias Regime -
Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes
Online Contents | 2017|Schlagwörter: Forward Bias -
$ Ca_{2} $$ SiO_{4} $:Ln (Ln = $ Ce^{3+} $, $ Eu^{2+} $, $ Sm^{3+} $) tricolor emission phosphors and their application for near-UV white light-emitting diode
Online Contents | 2014|Schlagwörter: Forward Bias Current -
Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique
Online Contents | 2017|Schlagwörter: Forward Bias -
Temperature dependence of characteristic parameters of the Au/$ C_{20} $$ H_{12} $/n-Si Schottky barrier diodes (SBDs) in the wide temperature range
Online Contents | 2016|Schlagwörter: Forward Bias -
Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
Online Contents | 2016|Schlagwörter: Forward Bias -
Effects of temperature and Ti-nonstoichiometry on electric properties of $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ thin films
Online Contents | 2016|Schlagwörter: Forward Bias -
Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level
Elsevier | 2016|Schlagwörter: Forward bias -
Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
Online Contents | 2016|Schlagwörter: Forward Bias -
Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction
Tema Archiv | 2014|Schlagwörter: low forward bias, high forward bias -
Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + $ Ca_{1.9} $$ Pr_{0.1} $$ Co_{4} $$ O_{x} $-doped poly(vinyl alcohol)) interfacial layer
Online Contents | 2017|Schlagwörter: Forward Bias -
Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of $ Ga_{x} $$ In_{1−x} $P/GaAs structure
Online Contents | 2012|Schlagwörter: Forward Bias
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