Erscheinungsjahr
Medientyp
Format
Lizenz
Sprache
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On coarse projective integration for atomic deposition in amorphous systems
Online Contents | 2015| -
Low defect density lattice-mismatched semiconductor devices and methods of fabricating same
Freier ZugriffEuropäisches Patentamt | 2016| -
Method and System to Mimic A Random Structural Pattern
Freier ZugriffEuropäisches Patentamt | 2021| -
Dislocation reduction in heteroepitaxial Ge on Si using SiO2 lined etch pits and epitaxial lateral overgrowth
NationallizenzAmerican Institute of Physics | 2011| -
Method and system to mimic a random structural pattern
Freier ZugriffEuropäisches Patentamt | 2024| -
Microsphere-Based Coatings for Radioactive Cooling Under Direct Sunlight
Freier ZugriffEuropäisches Patentamt | 2024| -
Microsphere-Based Coatings for Radioactive Cooling Under Direct Sunlight
Freier ZugriffEuropäisches Patentamt | 2019| -
Microsphere-Based Coatings for Radioactive Cooling Under Direct Sunlight
Freier ZugriffEuropäisches Patentamt | 2020| -
Microsphere-based coatings for radioactive cooling under direct sunlight
Freier ZugriffEuropäisches Patentamt | 2019| -
A METHOD AND SYSTEM TO MIMIC A RANDOM STRUCTURAL PATTERN
Freier ZugriffEuropäisches Patentamt | 2019| -
MICROSPHERE-BASED COATINGS FOR RADIATIVE COOLING UNDER DIRECT SUNLIGHT
Freier ZugriffEuropäisches Patentamt | 2017| -
Large-scale patterning of germanium quantum dots by stress transfer
Freier ZugriffEuropäisches Patentamt | 2017| -
Parametric analysis of mechanically driven compositional patterning in SiGe substrates
American Institute of Physics | 2017| -
Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates
American Institute of Physics | 2014| -
Large-scale patterning of germanium quantum dots by stress transfer
Freier ZugriffEuropäisches Patentamt | 2016| -
Origin and removal of stacking faults in Ge islands nucleated on Si within nanoscale openings in SiO2
NationallizenzAmerican Institute of Physics | 2011| -
SUMMER SCHOOL POSTER SESSION AWARD PAPERS - High-Performance Engines: Fast Cars Accelerate Learning
Online Contents | 2003| -
Experimental and theoretical investigation of thermal stress relief during epitaxial growth of Ge on Si using air-gapped SiO2 nanotemplates
NationallizenzAmerican Institute of Physics | 2011| -
Semiconductor device comprising epitaxially grown semiconductor material and an air gap
Freier ZugriffEuropäisches Patentamt | 2016| -
Independent Control of Effective Pore Diameter and Porosity of Masking Material to Increase Particle Capture and Breathing Easiness
Freier ZugriffEuropäisches Patentamt | 2023| -
Structure and chemical composition of fluorinated SiO2 films deposited using SiF4-O2 plasmas
Online Contents | 1997| -
METAL-CARBON-NANOTUBE METAL MATRIX COMPOSITES FOR METAL CONTACTS ON PHOTOVOLTAIC CELLS
Freier ZugriffEuropäisches Patentamt | 2023| -
Detection of combinative infrared absorption bands in thin silicon dioxide films
Online Contents | 1997| -
Reasons for lower dielectric constant of fluorinated SiO2 films
NationallizenzAmerican Institute of Physics | 1998| -
Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma
American Institute of Physics | 1996| -
Modeling and simulation of compositional engineering in SiGe films using patterned stress fields
Royal Society of Chemistry | 2016| -
Structure and chemical composition of fluorinated films deposited using plasmas
American Institute of Physics | 1997| -
Biomarker sensing based on nanofluidic amplification and resonant optical detection
Freier ZugriffEuropäisches Patentamt | 2018| -
Electrospinning to Surpass White Natural Silk in Sunlight Rejection for Radiative Cooling
Freier ZugriffWiley | 2021| -
Detection of combinative infrared absorption bands in thin silicon dioxide films
NationallizenzAmerican Institute of Physics | 1997| -
LOW-COST, CRACK-TOLERANT, SCREEN-PRINTABLE METALLIZATION FOR INCREASED MODULE RELIABILITY
Freier ZugriffEuropäisches Patentamt | 2021| -
Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation
American Institute of Physics | 2015| -
LOW-COST, CRACK-TOLERANT, SCREEN-PRINTABLE METALLIZATION FOR INCREASED MODULE RELIABILITY
Freier ZugriffEuropäisches Patentamt | 2021| -
Probing Interactions of Ge with Chemical and Thermal SiO2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy
American Chemical Society | 2007| -
LOW-COST, CRACK-TOLERANT, SCREEN-PRINTABLE METALLIZATION FOR INCREASED MODULE RELIABILITY
Freier ZugriffEuropäisches Patentamt | 2022| -
FLEXIBILITY-ASSISTED HEAT REMOVAL IN THIN CRYSTALLINE SILICON SOLAR CELLS
Freier ZugriffEuropäisches Patentamt | 2022| -
Flexibility-assisted heat removal in thin crystalline silicon solar cells
Freier ZugriffArXiv | 2022|
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