Synonyme wurden verwendet für: Engineering • Research • Technology • University
Suche ohne Synonyme: Mehran University Research Journal of Engineering and Technology
Verwendete Synonyme:
- industrielle technik
- ingenieurwesen
- ingenieurwissenschaft
- ingenieurwissenschaften
- technik
- technikwissenschaften
- technique
- technische wissenschaften
Verwendete Synonyme:
- forschung
- forschungen
- grundlagenforschung
- grundlagentheorie
- informationsermittlung
- recherche
- recherchen
- wissenschaftliche forschung
Verwendete Synonyme:
- produktionstechnologie
- technique
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Verwendete Synonyme:
- universitat
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The investigation of electrodeposited Cu2O/ITO layers by chronocoulometry process: effect of electrical potentialProject supported the PNR (Nos. 8/U311/R77, U311/R81), the “Agencethematique de rechercheen science ettechnologie” (ATRST), the National Administration of Scientific Research, the CNEPRU of Oran University of Sciences and Technology (No. B00L02UN310220130011), and the Scientific Research Projects Coordination (Nos. 2012-01-01-KAP05, 2012-01-01-KAP06) Yildiz Technical University.
PaperIOP Institute of Physics | 2016|The thin films of Cu2O are deposited by electrodeposition technique onto indium tin oxide (ITO)-coated glass substrate at
...Verlag: Institute of Physics -
Solvothermal synthesis of Bi2O3/BiVO4 heterojunction with enhanced visible-light photocatalytic performancesProject supported by the National Natural Science Foundation of China (Nos. 61306077, 21301060), the Fundamental Research Funds for the Central Universities (Nos. JB-ZR1109, JB-ZR1212), the National Science Foundation of Quanzhou City (No. 2014Z108), the Promotion Program for Young and Middle-aged Teachers in Science and Technology Research of Huaqiao University (No. ZQN-PY207), Discipline Innovation Team Project of Huaqiao University (No. 201320), and the Instrumental Analysis Center Huaqiao University.
PaperIOP Institute of Physics | 2016|the combination of homogeneous precipitation and two-step solvothermal method followed by thermal solution of NaOH etching process. The as ...Verlag: Institute of Physics -
High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cellsProject supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).
PaperIOP Institute of Physics | 2016|glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B ...Verlag: Institute of Physics -
Development of 17 kV 4H-SiC PiN diodeProject supported by the National High Technology Research and Development Program of China (No. 2014AA041401).
PaperIOP Institute of Physics | 2016|The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented
...Verlag: Institute of Physics -
Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistorProject supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).
PaperIOP Institute of Physics | 2016|calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is ...Verlag: Institute of Physics -
Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFETProject supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the Natural Science Foundation for the Youth of Hebei Province (Nos. F2012202094, F2015202267), and the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology (No. 2013010).
PaperIOP Institute of Physics | 2016|. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect ...Verlag: Institute of Physics -
Surface acoustic wave devices for sensor applicationsProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and the China Postdoctoral Science Foundation (CPSF).
Invited Review PapersIOP Institute of Physics | 2016|Surface acoustic wave (SAW) devices have been widely used in different fields and will continue to be of great importance in the
...Verlag: Institute of Physics -
Fabrication techniques and applications of flexible graphene-based electronic devicesProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).
Invited Review PapersIOP Institute of Physics | 2016|In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of
...Verlag: Institute of Physics -
A readout integrated circuit based on DBI-CTIA and cyclic ADC for MEMS-array-based focal planeProject supported by by National Natural Science Foundation of China (No. 61271130), the Beijing Municipal Science and Tech Project (No. D13110100290000), the Tsinghua University Initiative Scientific Research Program (No. 20131089225), and the Shenzhen Science and Technology Development Fund (No. CXZZ20130322170740736).
PaperIOP Institute of Physics | 2016|injection-capacitive trans-impedance amplifier (DBI-CTIA) and 10-bit cyclic ADCs, and is integrated with MAFP using 3-D integration technology. A ...Verlag: Institute of Physics -
Research progress of Si-based germanium materials and devicesProject supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).
ReviewIOP Institute of Physics | 2016|as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology ...Verlag: Institute of Physics -
New method for thickness determination and microscopic imaging of graphene-like two-dimensional materialsProject supported by the State Key Development Program for Basic Research of China (Nos. 2012CB921304, 2013CB632805, 2012CB619306) and the National Natural Science Foundation of China (No. 61474114).
PaperIOP Institute of Physics | 2016|surface topography of graphene and MoS2 samples. The contrast image shows the efficiency and reliability of this new clipping technique ...Verlag: Institute of Physics -
Bulk heterojunction thin film formation by single and dual feed ultrasonic spray method for application in organic solar cellssupported by the University Grants Commission, New Delhi, under Faculty Improvement Programme (No. 33-02/12(WRO) Dt.19.03.2013) and the Special Assistance Programme (530/2/DRS/2010(SAP-I)) Phase-II.
PaperIOP Institute of Physics | 2016|report, we present results of our initial experiments in this direction. The effect of process parameters on the thickness and surface roughness ...Verlag: Institute of Physics -
A low jitter supply regulated charge pump PLL with self-calibrationProject supported by the National Key Basic Research and Development Program of China (No. 2015CB352100).
PaperIOP Institute of Physics | 2016|-calibration technique. So that the optimal VCO gain is automatically selected and the process/temperature variation is compensated. Fabricated in the ...Verlag: Institute of Physics -
Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVDProject supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.
PaperIOP Institute of Physics | 2016|SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in ...Verlag: Institute of Physics -
Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing processProject supported by the Guangdong Innovative Research Team Program (No. 2009010044), the China Postdoctoral Science Foundation (No. 2014M562233), the National Natural Science Foundation of Guangdong, China (No. 2015A030312011), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2014KF17).
PaperIOP Institute of Physics | 2016|A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer
...Verlag: Institute of Physics -
A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technologyProject supported by the National Basic Research Program of China (No. 2010CBxxxx05), the Advance Research Project of China (No. 51308xxxx06), the Advance Research Foundation of China (No. 9140A08xxxx11DZ111), and Doctoral Scientific Research Foundation of Henan University of Science and Technology (No. 400613480011), and the Foundation of He'nan Educational Commettee (No. 15A510001).
PaperIOP Institute of Physics | 2015|) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power ...Verlag: Institute of Physics -
The impact of process variations on input impedance and mitigation using a circuit technique in FinFET-based LNAProject supported by the Defense Research Development Organization (DRDO), Government of India.
PaperIOP Institute of Physics | 2015|designed and studied to assess the impact of process variation on the LNA performance metrics such as input impedance, gain and noise figure. Four ...Verlag: Institute of Physics -
Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technologyProject supported by the National Natural Science Foundation of China (No. 11372261), the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province (No. 2013JQ0030), the Supporting Project of Department of Education of Sichuan Province (No. 2014zd3132), the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education (No. 12zxzk02), the Fund of Doctoral Research of Southwest University of Science and Technology (No. 12zx7106), and the Postgraduate Innovation Fund Project of Southwest University of Science and Technology (No. 14ycxjj0121).
PaperIOP Institute of Physics | 2015|examine defect nucleation and growth at nanoscale during annealing in Smart-Cut® technology. Research focus is put on the effects of ...Verlag: Institute of Physics -
Performance prediction of four-contact vertical Hall-devices using a conformal mapping techniqueProject supported by the Natural Science Foundation of Jiangsu Province, China (Nos. BK20131379, BK20141431) and the Graduate Research and Innovation Projects of Jiangsu Province (No. SJLX_0373).
PaperIOP Institute of Physics | 2015|technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD ...Verlag: Institute of Physics -
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriersProject supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).
PaperIOP Institute of Physics | 2015|/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that ...Verlag: Institute of Physics
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